CP547 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP547 Power Transistor PNP - Darlington Chip PRINCIPAL DEVICE TYPES MJ11011 2N6285 MJ11013 2N6286 MJ11015 2N6287 Process EPITAXIAL BASE Die Size 195 X 195 MILS Die Thickness 12 MILS Base Bonding Pad Area 29 X 29 MILS Emitter Bonding Pad Area 61 X 35 MILS Top Side Metalization AI - 30,000Å Back Side Metalization Ti/Ni/Au - 6,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY BACKSIDE COLLECTOR R3 (1-August 2002) GROSS DIE PER 5 INCH WAFER 290
Semiconductor Corp. TM PROCESS CP547 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002)