CP517 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP517 Power Transistor PNP - Darlington Chip PRINCIPAL DEVICE TYPES 2N6040 2N6041 2N6042 2N6299 Process EPITAXIAL BASE Die Size 111 X 111 MILS Die Thickness 10 MILS Base Bonding Pad Area 20 X 30 MILS Emitter Bonding Pad Area 20 X 26 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au/Cr/Ni/Au - 6,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY BACKSIDE COLLECTOR R1 (1-August 2002) GROSS DIE PER 5 INCH WAFER 910
Semiconductor Corp. TM PROCESS CP517 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002)