CP406-CWDM3011N CENTRAL | Alldatasheet
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Technical content
MECHANICAL SPECIFICATIONS: Die Size 63.8 x 38.9 MILS Die Thickness 5.5 MILS Gate Bonding Pad Area 7.1 x 7.1 MILS Source Bonding Pad Area 60.4 x 35.6 MILS Top Side Metalization Al-Cu - 40,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å Scribe Alley Width 2.36 MILS Wafer Diameter 8 INCHES Gross Die Per Wafer 17,312 MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS 20 V Continuous Drain Current I D 9.93 A Maximum Pulsed Drain Current I DM 37.44 A Power Dissipation P D 1.92 W Power Dissipation (TA=75°C) P D 1.15 W Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C Thermal Resistance JA 65 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=20V, VDS=0 100 nA IDSS V DS=30V, VGS=0 1.0 μA BVDSS V GS=0, ID=250μA 30 V VGS(th) VGS=VDS, ID=250μA 1.0 1.48 3.0 V VSD VGS=0, IS=1.0A 1.5 V rDS(ON) V GS=10V, ID=1.0A 5.66 13 mΩ rDS(ON) V GS=4.5V, ID=1.0A 9.29 18 mΩ R0 (7-April 2020) The CP406-CWDM3011N is a silicon N-Channel MOSFET designed for high speed pulsed amplifi er and driver applications. www.centralsemi. com
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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