CP405-CZDM0408N CENTRAL | Alldatasheet
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Technical content
The CP405-CZDM0408N is a high current silicon N-Channel MOSFET designed for high speed pulsed amplifi er and driver applications. Die Size 45.7 x 31.9 MILS Die Thickness 5.5 MILS Gate Bonding Pad Size 8.1 x 8.1 MILS Source Bonding Pad Size 41.9 x 28.1 MILS Top Side Metalization Al-Cu – 40,000Å Back Side Metalization Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å Scribe Alley Width 2.36 MILS Wafer Diameter 8 INCHES Gross Die Per Wafer 29,400 MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 40 V Gate-Source Voltage V GS 20 V Continuous Drain Current (Steady State) I D 8.01 A Maximum Pulsed Drain Current, tp=10μs I DM 30.42 A Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C Thermal Resistance JA 65 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=20V, VDS=0 100 nA IDSS V DS=40V, VGS=0 1.0 μA BVDSS V GS=0, ID=250μA 40 V VGS(th) VGS=VDS, ID=250μA 1.0 3.0 V VSD V GS=0, IS=1.0A 1.5 V rDS(ON) V GS=10V, ID=1.0A 0.015 0.020 Ω rDS(ON) V GS=4.5V, ID=1.0A 0.024 0.040 Ω R0 (7-May 2020) www.centralsemi. com
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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