CP392V-CMPT3904 CENTRAL | Alldatasheet

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Technical content

NPN - General Purpose Transistor Die

0.2 Amp, 40 Volt

Die Thickness 7.1 MILS Base Bonding Pad Size 3.74 x 3.74 MILS Emitter Bonding Pad Size 3.74 x 3.74 MILS Top Side Metalization Al – 30,000Å Back Side Metalization Au – 12,000Å Scribe Alley Width 1.5 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 93,826 The CP392V-CMPT3904 is a silicon NPN transistor designed for general purpose applications. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6.0 V Continuous Collector Current I C 200 mA Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV V CE=30V, VEB=3.0V 50 nA IBL V CE=30V, VEB=3.0V 50 nA BVCBO I C=10μA 60 V BVCEO I C=1.0mA 40 V BVEBO I E=10μA 6.0 V VCE(SAT) I C=10mA, IB=1.0mA 0.20 V VCE(SAT) I C=50mA, IB=5.0mA 0.30 V VBE(SAT) I C=10mA, IB=1.0mA 0.65 0.85 V VBE(SAT) I C=50mA, IB=5.0mA 0.95 V hFE V CE=1.0V, IC=0.1mA 40 hFE V CE=1.0V, IC=1.0mA 70 hFE V CE=1.0V, IC=10mA 100 300 hFE V CE=1.0V, IC=50mA 60 hFE V CE=1.0V, IC=100mA 30 fT V CE=20V, IC=10mA, f=100MHz 300 MHz Cob V CB=5.0V, IE=0, f=1.0MHz 4.0 pF Cib V BE=0.5V, IC=0, f=1.0MHz 12 pF BACKSIDE COLLECTOR R0 E B R2 (20-September 2018) www.centralsemi. com

Typical Electrical Characteristics ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX UNITS hie V CE=10V, IC=1.0mA, f=1.0kHz 1.0 10 kΩ hre V CE=10V, IC=1.0mA, f=1.0kHz 0.5 8.0 x10 hfe V CE=10V, IC=1.0mA, f=1.0kHz 100 400 hoe V CE=10V, IC=1.0mA, f=1.0kHz 1.0 40 μS NF V CE=5.0V, IC=100μA, RS=1.0kΩ, f=10Hz to 15.7kHz 5.0 dB td V CC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns tr V CC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns ts V CC=3.0V, IC=10mA, IB1=IB2=1.0mA 200 ns tf V CC=3.0V, IC=10mA, IB1=IB2=1.0mA 50 ns R2 (20-September 2018) www.centralsemi. com

Typical Electrical Characteristics R2 (20-September 2018) www.centralsemi. com

WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com

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