CP390-CDM4-600LR CENTRAL | Alldatasheet

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Technical content

Die Size 117 x 87.4 MILS Die Thickness 9.1 MILS Gate Bonding Pad Size 14 x 17.3 MILS Source Bonding Pad Size 51.2 x 39.4 MILS Top Side Metalization Al – 43,000Å Back Side Metalization Ag – 8,000Å Scribe Alley Width 3.15 MILS Wafer Diameter 6 INCHES Gross Die Per Wafer 2,154 The CP390-CDM4-600LR is a silicon N-Channel MOSFET designed for high current applications. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS 30 V Continuous Drain Current (Steady State) I D 4.0 A Maximum Pulsed Drain Current, tp=10μs I DM 13.5 A Continuous Source Current (Body Diode) I S 4.0 A Maximum Pulsed Source Current (Body Diode) I SM 13.5 A Single Pulse Avalanche Energy (Note 1) E AS 197 mJ Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C Note 1: L=30mH, IAS=3.5A, VDD=100V , RG=25Ω, Initial TJ=25°C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=30V, VDS=0 100 nA IDSS V DS=600V, VGS=0 0.065 1.0 μA BVDSS V GS=0, ID=250μA 600 V VGS(th) VGS=VDS, ID=250μA 2.0 3.25 4.0 V VSD VGS=0, IS=4.0A 0.86 1.4 V rDS(ON) V GS=10V, ID=2.0A 0.65 0.95 Ω Crss V DS=100V, VGS=0, f=1.0MHz 1.31 pF Ciss V DS=100V, VGS=0, f=1.0MHz 328 pF Coss VDS=100V, VGS=0, f=1.0MHz 26 pF Qg(tot) V DS=480V, VGS=10V, ID=4.0A (Note 2) 11.59 nC Qgs VDS=480V, VGS=10V, ID=4.0A (Note 2) 2.04 nC Qgd VDS=480V, VGS=10V, ID=4.0A (Note 2) 6.09 nC R0 (14-June 2016) www.centralsemi. com

Typical Electrical Characteristics ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL TEST CONDITIONS TYP UNITS td(on) VDD=300V, VGS=10V, ID=4.0A, RG=25Ω (Note 2) 8.0 ns tr V DD=300V, VGS=10V, ID=4.0A, RG=25Ω (Note 2) 24 ns td(off) VDD=300V, VGS=10V, ID=4.0A, RG=25Ω (Note 2) 33 ns tf V DD=300V, VGS=10V, ID=4.0A, RG=25Ω (Note 2) 24 ns trr VGS=0, IS=4.0A, di/dt=100A/μs (Note 2) 211 ns Qrr VGS=0, IS=4.0A, di/dt=100A/μs (Note 2) 1.7 μC Note 2: Pulse Width < 300μs, Duty Cycle < 2% R0 (14-June 2016) www.centralsemi. com

Typical Electrical Characteristics R0 (14-June 2016) www.centralsemi. com

WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com

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