DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
NPN - High Voltage Darlington Transistor Chip GEOMETRY PRINCIPAL DEVICE TYPE CZT2000 GROSS DIE PER 5 INCH WAFER 11,055 PROCESS DETAILS Die Size 39.4 x 39.4 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au-As - 18,000Å BACKSIDE COLLECTOR R0 www.centralsemi.com R0 (19-September 2011)
Typical Electrical Characteristics www.centralsemi.com R0 (19-September 2011)