CNY75 VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Isolation materials according to UL94-VO  Pollution degree 2 (DIN/VDE 0110 / resp. IEC 60664)  Climatic classification 55/100/21 (IEC 60068 part 1)  Special construction: Therefore, extra low cou- pling capacity of typical 0.2 pF, high Common Mode Rejection  Low temperature coefficient of CTR  CTR offered in 3 groups  Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)  Rated recurring peak voltage (repetitive) VIORM = 600 VRMS  Creepage current resistan ce according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI ≥ 275  Thickness through insulation ≥ 0.75 mm  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E76222 System Code A, Double Protection  BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending  VDE related features:  Rated impulse voltage (transient overvoltage) V IOTM = 6 kV peak  Isolation test voltage (partial discharge test volt- age) Vpd = 1.6 kV  FIMKO (SETI): EN 60950, Certificate No. 12399

Applications

Circuits for safe protective separation against electri- cal shock according to safety class II (reinforced iso- lation): For appl. class I - IV at mains voltage ≤ 300 V For appl. class I - III at mains voltage ≤ 600 V accord- ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747- 5-5 pending, table 2, suitable for: Switch-mode power supplies, line receiver, com- puter peripheral interface, microprocessor sys- tem interface.

Description

The CNY75A/ B/ C/ GA/ GB/ GC consists of a pho- totransistor opti cally coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. The elements are mounted on one leadframe provid- ing a fixed distance between input and output for high- est safety requirements. VDE Standards These couplers perform safety functions according to the following equipment standards: DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements IEC 60950/ EN 60950 Office machines (applied for rein forced isolation for mains voltage ≤ 400 VRMS) VDE 0804 Telecommunication apparatus and data processing IEC 60065 Safety for mains-operated electronic and related house hold appa- ratus

www.vishay.com Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Order Information G = Leadform 10.16 mm; G is not marked on the body For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can caus e permanent damage to the device. F unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Part Remarks CNY75A CTR 63 - 125 %, DIP-6 CNY75B CTR 100 - 200 %, DIP-6 CNY75C CTR 160 - 320 %, DIP-6 CNY75GA CTR 63 - 125 %, DIP-6 CNY75GB CTR 100 - 200 %, DIP-6 CNY75GC CTR 160 - 320 %, DIP-6 Parameter Test condition Symbol Value Unit Reverse voltage V R 5V Forward current I F 60 mA Forward surge current t p ≤ 10 µsI FSM 3A Power dissipation P diss 100 mW Junction temperature T j 125 °C Parameter Test condition Symbol Value Unit Collector base voltage V CBO 90 V Collector emitter voltage V CEO 90 V Emitter collector voltage V ECO 7V Collector current I C 50 mA Collector peak current t p/T = 0.5, tp ≤ 10 ms I CM 100 mA Power dissipation P diss 150 mW Junction temperature T j 125 °C Parameter Test condition Symbol Value Unit AC isolation test voltage (RMS) t = 1 min V ISO 3750 V RMS Total power dissipation P tot 250 mW Ambient temperature range T amb - 55 to + 100 °C Storage temperature range T stg - 55 to + 125 °C Soldering temperature 2 mm from case, t ≤ 10 s T sld 260 °C

Rev. 1.7, 26-Oct-04 Vishay Semiconductors www.vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Switching Characteristics Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 50 mA V F 1.25 1.6 V Reverse current V R = 6 V I R 10 µA Junction capacitance V R = 0, f = 1 MHz C j 50 pF Parameter Test condition Symbol Min Typ. Max Unit Collector base voltage I C = 100 µAV CBO 90 V Collector emitter voltage I C = 1 mA V CEO 90 V Emitter collector voltage I E = 100 µAV ECO 7V Collector-emitter leakage current VCE = 20 V, IF = 0 I CEO 150 nA Parameter Test condition Symbol Min Typ. Max Unit Collector emitter saturation voltage IF = 10 mA, IC = 1 mA V CEsat 0.3 V Cut-off frequency V CE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz C k 0.3 pF Parameter Test condition Part Symbol Min Typ. Max Unit IC/IF VCE = 5 V, IF = 1 mA CNY75GA CTR 15 % CNY75GB CTR 30 % CNY75GC CTR 60 % VCE = 5 V, IF = 10 mA CNY75GA CTR 63 1.25 % CNY75GB CTR 100 200 % CNY75GC CTR 160 320 % Parameter Current Delay Rise time Storage Fall time Tur n-on time Turn-off time Turn-on time Turn-off time Test condition VCC = 5 V, RL = 100 Ω (see figure 3) VCC = 5 V, RL = 1.0 kΩ (see figure 4) Symbol IF tD tr tS tf ton toff ton toff Unit mA µs µs µs µs µs µs µs µs

Rev. 1.7, 26-Oct-04 Vishay Semiconductors www.vishay.com Package Dimensions in mm Package Dimensions in mm 14770 14771

www.vishay.com Document Number 83536 Rev. 1.7, 26-Oct-04 CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423