CNY75C

CNY75A VISHAY | Alldatasheet

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Optocoupler, Phototransistor Output, with Base Connection www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83536 254 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC Vishay Semiconductors

DESCRIPTION

The CNY75A/B/C/GA/GB/GC cons ists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. VDE STANDARDS These couplers perform safety functions according to the following equipment standards:

• DIN EN 60747-5-5 Optocoupler for electrical safety requirements  IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 V RMS)  VDE 0804 Telecommunication apparatus and data processing  IEC 60065 Safety for mains-operated electronic and related household apparatus

FEATURES

 Isolation materials according to UL94-VO  Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)  Climatic classification 55/100/21 (IEC 60068 part 1)  Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection  Low temperature coefficient of CTR  CTR offered in 3 groups  Rated isolation voltage (RMS includes DC) V IOWM = 600 VRMS (848 V peak)  Rated recurring peak voltage (repetitive) VIORM = 600 VRMS  Rated impulse voltage (t ransient overvoltage) VIOTM = 6 kVpeak  Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV  Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 275  Thickness through insulation ≥ 0.75 mm  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

 Switch-mode power supplies  Line receiver  Computer peripheral interface  Microprocessor system interface  Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5. AGENCY APPROVALS  UL1577, file no. E76222 system code A, double protection  BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), certificate number 7081 and 7402  DIN EN 60747-5-5  FIMKO (SETI): EN 60950, certificate no. 12399 C EB 17186 231 546 NCC( - )A (+) VDE

Document Number: 83536 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.7, 08-May-08 255 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Note G = leadform 10.16 mm; G is not marked on the body. Note (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ORDER INFORMATION PART REMARKS CNY75A CTR 63 to 125 %, DIP-6 CNY75B CTR 100 to 200 %, DIP-6 CNY75C CTR 160 to 320 %, DIP-6 CNY75GA CTR 63 to 125 %, DIP-6 CNY75GB CTR 100 to 200 %, DIP-6 CNY75GC CTR 160 to 320 %, DIP-6 ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5.0 V Forward current IF 60 mA Forward surge current t p ≤ 10 µs I FSM 3.0 A Power dissipation Pdiss 100 mW Junction temperature Tj 125 °C OUTPUT Collector base voltage V CBO 90 V Collector emitter voltage V CEO 90 V Emitter collector voltage V ECO 7.0 V Collector current IC 50 mA Collector peak current t p/T = 0.5, tp ≤ 10 ms I CM 100 mA Power dissipation Pdiss 150 mW Junction temperature Tj 125 °C COUPLER AC isolation test voltage (RMS) t = 1 min V ISO 3750 V RMS Total power dissipation Ptot 250 mW Ambient temperature range T amb - 55 to + 100 °C Storage temperature range T stg - 55 to + 125 °C Soldering temperature (2) 2 mm from case, t ≤ 10 s T sld 260 °C ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 50 mA V F 1.25 1.6 V Reverse current V R = 6 V I R 10 µA Junction capacitance V R = 0 V, f = 1 MHz C j 50 pF

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83536 256 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical val ues are characteristic s of the device and are the result of en gineering evaluations. Typical values are for information only and are not part of the testing requirements. OUTPUT Collector base voltage I C = 100 µA V CBO 90 V Collector emitter voltage I C = 1 mA V CEO 90 V Emitter collector voltage I E = 100 µA V ECO 7V Collector emitter leakage current V CE = 20 V, IF = 0 A I CEO 150 nA COUPLER Collector emitter saturation voltage I F = 10 mA, IC = 1 mA V CEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz C k 0.3 pF CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5 V, IF = 1 mA CNY75GA CTR 15 % CNY75GB CTR 30 % CNY75GC CTR 60 % VCE = 5 V, IF = 10 mA CNY75GA CTR 63 125 % CNY75GB CTR 100 200 % CNY75GC CTR 160 320 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT Current time VCC = 5 V, RL = 100 Ω (see figure 3) CNY75GA I F 10 mA CNY75GB I F 10 mA CNY75GC I F 10 mA Delay time VCC = 5 V, RL = 100 Ω (see figure 3) CNY75GA t d 2µ s CNY75GB t d 2.5 µs CNY75GC t d 2.8 µs Rise time VCC = 5 V, RL = 100 Ω (see figure 3) CNY75GA t r 2.5 µs CNY75GB t r 3µ s CNY75GC t r 4.2 µs Fall time VCC = 5 V, RL = 100 Ω (see figure 3) CNY75GA t f 2.7 µs CNY75GB t f 3.7 µs CNY75GC t f 4.7 µs Storage time VCC = 5 V, RL = 100 Ω (see figure 3) CNY75GA t s 0.3 µs CNY75GB t s 0.3 µs CNY75GC t s 0.3 µs Turn-on time VCC = 5 V, RL = 100 Ω (see figure 3) CNY75GA t on 4.5 µs CNY75GB t on 5.5 µs CNY75GC t on 7µ s Turn-off time VCC = 5 V, RL = 100 Ω (see figure 3) CNY75GA t off 3µ s CNY75GB t off 4µ s CNY75GC t off 5µ s ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Document Number: 83536 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.7, 08-May-08 257 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Note According DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable fo r safe electrical isolati on only within the safety ra tings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-5/DIN EN 60747-; IEC60747 Turn-on time VCC = 5 V, RL = 1 kΩ (see figure 4) CNY75GA t on 10 µs CNY75GB t on 16.5 µs CNY75GC t on 11 µs Turn-off time VCC = 5 V, RL = 1 kΩ (see figure 4) CNY75GA t off 25 µs CNY75GB t off 20 µs CNY75GC t off 37.5 µs MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward current I F 130 mA OUTPUT Power dissipation P diss 265 mW COUPLER Rated impulse voltage V IOTM 6k V Safety temperature T si 150 °C INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test 100 %, ttest = 1 s V pd 1.6 kV Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6.0 kV Vpd 1.3 kV Insulation resistance VIO = 500 V R IO 1012 Ω VIO = 500 V, Tamb ≤ 100 °C R IO 1011 Ω VIO = 500 V, Tamb ≤ 150 °C (construction test only) RIO 109 Ω SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT 100 125 150 175 200 225 250 275 0 25 50 75 100 125 150 175 P - Total Po wer Dissipation (mW) Tamb - Ambient Temperature (°C)95 10923 tot Psi (mW) Isi (mA) t 13930 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VIOTM VPd VIOWM VIORM ttest tTr = 60 s tstres t3 t4

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83536 258 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 3 - Total Power Dissipation vs. Ambient Temperature Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 6 - Collector Dark Current vs. Ambient Temperature Fig. 7 - Collector Base Current vs. Forward Current Fig. 8 - Collector Current vs. Forward Current 100 150 200 250 300 04 0 80 120 Ptot - Total Power Dissipation (mW) Tamb - Ambient Temperature (°C)96 11700 Coupled device Phototransistor IR-diode 0.1 100 1000 VF - Forward Voltage (V)96 11862 IF - Forward Current (mA) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature (°C)96 11918 CTR - Relati ve Current Transfer Ratiorel VCE = 5 V IF = 10 mA 02 5 5 0 7 5 100 1000 10000 I - Collector Dark C urrent,CEO Tamb - Ambient Temperature (°C) 100 95 11038 with Open Base (nA) VCE = 30 V IF = 0 11 0 0.001 0.01 0.1 I - Collector Base C urrent (mA)CB IF - Forward Current (mA) 100 95 11039 VCB = 5 V 0.1 1 10 0.01 0.1 100 I - Collector C urrent (mA)C IF - Forward Current (mA) 100 95 11040 VCE = 5 V

Document Number: 83536 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.7, 08-May-08 259 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Fig. 9 - Collector Current vs. Collector Emitter Voltage Fig. 10 - Collector Current vs. Collector Emitter Voltage Fig. 11 - Collector Current vs. Collector Emitter Voltage Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current Fig. 13 - Collector Emitter Saturation Voltage vs. Collector Current Fig. 14 - Collector Emitter Saturation Voltage vs. Collector Current 0.1 1 10 0.1 100 VCE - Collector Emitter Voltage (V) 100 95 11041 I - Collector C urrent (mA)C 5 mA 2 mA 1 mA IF = 50 mA 20 mA 10 mA CNY75A 0.1 1 10 0.1 100 VCE - Collector Emitter Voltage (V) 100 95 11042 I - Collector C urrent (mA)C 5 mA 2 mA 1 mA IF = 50 mA 20 mA 10 mA CNY75B 0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0 VCE - Collector Emitter Voltage (V)96 11919 I - Collector C urrent (mA)C 20 mA 10 mA 5 mA 2 mA 1 mA IF = 50 mA CNY75C 11 0 0.2 0.4 0.6 0.8 1.0 V - Collector EmitterCEsat IC - Collector Current (mA) 100 CTR = 50 % used 95 11034 CNY75A used Saturation Voltage (V) 20 % used 10 % used 11 0 0.2 0.4 0.6 0.8 1.0 V - Collector Emitter Saturation Voltage (V)CEsat IC - Collector Current (mA) 100 CTR = 50 % 20 % 10 % 95 11043 CNY75B 11 0 0.2 0.4 0.6 0.8 1.0 V - Collector Emitter Saturation Voltage (V)CEsat IC - Collector Current (mA) 100 CTR = 50 % 20 % 10 % 95 11044 CNY75C

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83536 260 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Fig. 15 - DC Current Gain vs. Collector Current Fig. 16 - Current Transfer Ratio vs. Forward Current Fig. 17 - Current Transfer Ratio vs. Forward Current Fig. 18 - Current Transfer Ratio vs. Forward Current Fig. 19 - Turn-on/off Time vs. Forward Current Fig. 20 - Turn-on/off Time vs. Forward Current 0.01 0.1 1 10 200 400 600 800 1000 h - DC C urrent GainFE IC - Collector Current (mA) 100 95 11035 VCE = 5 V 0.1 1 10 100 1000CTR - Current Transfer Ratio (%) IF - Forward Current (mA) 100 95 11036 CNY75A(G) VCE = 5 V 0.1 1 10 100 1000CTR - Current Transfer Ratio (%) IF - Forward Current (mA) 100 95 11045 CNY75B(G) VCE = 5 V 0.1 1 10 100 1000CTR - Current Transfer Ratio (%) IF - Forward Current (mA) 100 95 11046 CNY75C(G) VCE = 5 V 01 0 1 5 IF - Forward Current (mA) 95 11033 t/ t - Turn-on/Turn-off Time (µs)offon CNY75A(G) Saturated operation VS = 5 V RL = 1 kΩ toff ton 051 0 1 5 IF - Forward Current (mA) 95 11048 t/ t- T urn-on/Turn-off Time (µs)offon CNY75B(G) Saturated operation VS = 5 V RL = 1 kΩ toff ton

Document Number: 83536 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.7, 08-May-08 261 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Fig. 21 - Turn-on/off Time vs. Forward Current Fig. 22 - Turn-on/off Time vs. Collector Current Fig. 23 - Turn-on/off Time vs. Collector Current Fig. 24 - Turn-on/off Time vs. Collector Current Fig. 25 - Marking Example 051 0 1 5 IF - Forward Current (mA) 95 11050 t /t - T urn-on/Turn-off Time (µs)offon CNY75C(G) Saturated operation VS = 5 V RL = 1 kΩ toff ton IC - Collector Current (mA) 95 11032 t/ t - T urn-on/Turn-off Time (µs)offon CNY75A(G) Non-saturated operation VS = 5 V RL = 100 Ω toff ton IC - Collector Current (mA) 95 11047t/ t- T urn-on/Turn-off Time (µs)offon CNY75B(G) Non-saturated operation VS = 5 V RL= 100 Ω toff ton IC - Collector Current (mA) 95 11049t/ t - Turn-on/Turn-off Time (µs)offon CNY75C(G) Non-saturated operation VS = 5 V RL = 100 Ω toff ton 2 6 V XXXY 63 Vishay logo Date code (year, week) Package code Plant code Product code Customer code/ identification/ option 17936 VDE logo UL logo VDE XXXXX XXXXX

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83536 262 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection PACKAGE DIMENSIONS in millimeters 14770 6.4 max. 7.62 ± 0.1 B 0.4 B technical drawings according to DIN specifications Weight: ca. 0.50 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board 1 2 3 6 5 4 8.8 max. 8.6 max. 1.54 4.2 ± 0.1 2.54 nom. 5.08 nom. 0.58 max. 3.3 0.5 min. 0.3 A A 9 ± 0.6 0.3 max. 14771 8.8 max. 8.6 max. 0.3 max. 6.4 max. 1.54 technical drawings according to DIN specifications Weight: ca. 0.50 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board 4.2 ± 0.1 10.16 ± 0.2 7.62 ± 0.1 2.54 nom. 5.08 nom. 0.58 max. 5.08 max. 3.3 0.5 min. 1 2 3 6 5 4 0.4 0.3 B A A B

Document Number: 83536 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.7, 08-May-08 263 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.