CNY74-2H_08 VISHAY | Alldatasheet

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Document Number: 83526 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 07.-Dec-07 1 Optocoupler, Phototransistor Output, Multichannel CNY74-2H/CNY74-4H Vishay Semiconductors

DESCRIPTION

The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-pin, resp. 16-pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

FEATURES

  • CNY74-2H includes 2 isolator channels  CNY74-4H includes 4 isolator channels  Isolation test voltage V ISO = 5000 VRMS  Test class 25/100/21 DIN 40 045  Low coupling capacitance of typical 0.3 pF  Current transfer ratio (CTR) of typical 100 %  Low temperature coefficient of CTR  Wide ambient temperature range  Coupling system U  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

 Galvanically separated circ uits, non-interacting switches AGENCY APPROVALS  UL1577, file no. E76222 system code U, double protection  CSA22.2 bulletin 5A Note CNY74-2H and CNY74-4M are marked as CNY74-2 and CNY74-4 respectively. E AC

8 P IN

16 PIN

CNY74-2H CTR 50 to 600 %, DIP-8 CNY74-4H CTR 50 to 600 %, DIP-16 ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6V Forward current I F 60 mA Forward surge current t p ≤ 10 µs I FSM 1.5 A Power dissipation P diss 100 mW Junction temperature T j 125 °C OUTPUT Collector emitter voltage V CEO 70 V Emitter collector voltage V ECO 7V Collector current I C 50 mA Collector peak current t p/T = 0.5, tp ≤ 10 ms I CM 100 mA Power dissipation P diss 150 mW Junction temperature T j 125 °C

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83526 2 Rev. 1.5, 07.-Dec-07 CNY74-2H/CNY74-4H Vishay Semiconductors Optocoupler, Phototransistor Output, Multichannel Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause per manent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Related to standard climate 23/50 DIN 50014. (3) Refer to wave profile for soldering conditions for through hole devices (DIP). Note (1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. (2) Related to standard climate 23/50 DIN 50014. COUPLER AC isolation test voltage (RMS) t = 1 min V ISO (2) 5000 V RMS Total power dissipation P tot 250 mW Ambient temperature range T amb - 40 to + 100 °C Storage temperature range T stg - 55 to + 125 °C Soldering temperature 2 mm from case, t ≤ 10 s T sld 260 °C ELECTRICAL CHARACTERISTCS (1) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 50 mA V F 1.25 1.6 V OUTPUT Collector emitter voltage I C = 1 mA V CEO 70 V Emitter collector voltage I E = 100 µA V ECO 7V Collector dark current V CE = 20 V, IF = 0 A, E = 0 I CEO 100 nA COUPLER DC isolation test voltage t = 2 s V ISO(2) 5000 V Isolation resistance VIO = 1000 V, 40 % relative humidity RIO(2) 1012 Ω Collector emitter saturation voltage I F = 10 mA, IC = 1 mA V CEsat 0.3 V Cut-off frequency V CE = 5 V, IF = 10 mA, RL = 100 Ω fc 100 kHz Coupling capacitance f = 1 MHz C k 0.3 pF CURRENT TRANSFER RATIO PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5 V, IF = 5 mA CTR 50 100 600 % VCE = 5 V, IF = 10 mA CTR 60 120 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time V S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t d 3.0 µs Rise time V S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t r 3.0 µs Fall time V S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t f 4.7 µs Storage time V S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t s 0.3 µs Turn-on time V S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t on 6.0 µs Turn-off time V S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) t off 5.0 µs Turn-on time V S = 5 V, IC = 10 mA, RL = 1 kΩ (see figure 2) t on 9.0 µs Turn-off time V S = 5 V, IC = 10 mA, RL = 1 kΩ (see figure 2) t off 18.0 µs ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Document Number: 83526 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 07.-Dec-07 3 CNY74-2H/CNY74-4H Optocoupler, Phototransistor Output, Multichannel Vishay Semiconductors Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Test Circuit, Saturated Operation Fig. 3 - Switching Times TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 4 - Total Power Dissipation vs. Ambient Temperature Fig. 5 - Forward Current vs. Forward Voltage Channel I Channel II 95 10804 RG = 50 tp tp = 50 µs T = 0.01 + 5 V IF 50 100 IF IC = 2 mA; adjusted through input amplitude Oscilloscope RL = 1 M CL = 20 pF Channel I Channel II 95 10843 RG = 50 Ω tp tp = 50 µs T = 0.01 + 5 V IC IF 50 Ω 1 kΩ IF = 10 mA Oscilloscope RL ≥ CL 20 pF 1 MΩ tp t t 10 % 90 % 100 % tr td ton ts tf toff IF IC 96 11698 tp Pulse Duration td Delay Time tr Rise Time ton (= t + t )d r Turn-on Time ts Storage Time t f Fall Time toff (= ts + tf)T urn-off Time 100 150 200 250 300 04 0 801 2 0 Ptot - Total Power Dissipation (mW) Tamb - Ambient Temperature (°C)96 11700 Coupled device Phototransistor IR-diode 0.1 100 1000 VF - Forward Voltage (V)96 11862 IF - Forward Current (mA)

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83526 4 Rev. 1.5, 07.-Dec-07 CNY74-2H/CNY74-4H Vishay Semiconductors Optocoupler, Phototransistor Output, Multichannel Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 7 - Collector Dark Current vs. Ambient Temperature Fig. 8 - Collector Current vs. Forward Current Fig. 9 - Collector Current vs. Collector Emitter Voltage Fig. 10 - Collector Emitter Saturation Voltage vs. Collector Current Fig. 11 - Current Transfer Ratio vs. Forward Current - 25 0 25 50 0.5 1.0 1.5 2.0 CTRrel - Relative Current Transfer Ratio 95 11025 Tamb - Ambient Temperature (°C) VCE = 5 V IF = 5 mA 02 5 5 0 7 5 100 1000 10000 ICEO - Collector Dark Current, 100 95 11026 with Open Base (nA) VCE = 20 V IF = 0 Tamb - Ambient Temperature (°C) 0.1 1 10 0.01 0.1 100 IC - Collector Current (mA) IF - Forward Current (mA) 100 95 11027 VCE = 5 V 0.1 1 10 0.1 100 VCE - Collector Emitter Voltage (V) 100 95 10985 IC - Collector Current (mA) IF = 50 mA 5 mA 2 mA 1 mA 20 mA 10 mA 11 0 0.2 0.4 0.6 0.8 1.0 VCEsat - Collector Emitter Saturation Voltage (V) IC - Collector Current (mA) 100 CTR = 50 % used 20 % used 95 11028 10 % used 0.1 1 10 100 1000 CTR - Current Transfer Ratio (%) IF - Forward Current (mA) 100 95 11029 VCE = 5 V

Document Number: 83526 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 07.-Dec-07 5 CNY74-2H/CNY74-4H Optocoupler, Phototransistor Output, Multichannel Vishay Semiconductors Fig. 12 - Turn-on/off Time vs. Forward Current Fig. 13 - Turn-on/off Time vs. Collector Current Fig. 14 - Marking Example PACKAGE DIMENSIONS in millimeters 01 0 1 5 IF - Forward Current (mA) 95 11031 ton/toff - Turn-on/Turn-off Time (µs) Saturated Operation VS = 5 V RL = 1 kΩ toff ton IC - Collector Current (mA) 95 11030 ton/toff- Turn-on /Turn-off Time (µs) Non Saturated Operation VS = 5 V RL = 100 Ω toff ton Vishay Logo Date Code (year, week) Package Code Plant Code Product CodeCustomer Code / Identification / Option VDE Logo 17939 UL Logo VDE XXXXX XXXXX V XXXY 68 14784 technical drawings according to DIN specifications Weight: ca. 0.55 g Creepage Distance: > 6 mm Air Path: > 6 mm after Mounting on PC Board 2.54 nom. 7.62 nom.< 9.8 9 ± 0.8 3.3 4.4 ± 0.2 3.6 ± 0.1 0.53 ± 0.05 1.32 ± 0.05 3 x 2.54 = 7.62 9.5 ± 0.2 6.3 ± 0.1 1 2 3 4 8 7 6 5 0.25 ± 0.05

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83526 6 Rev. 1.5, 07.-Dec-07 CNY74-2H/CNY74-4H Vishay Semiconductors Optocoupler, Phototransistor Output, Multichannel PACKAGE DIMENSIONS in millimeters 14783 < 20 19.7 ± 0.2 0.53 ± 0.05 1.32 ± 0.052.54 nom. 0.25 ± 0.05 7.62 nom. 3.3 7 x 2.54 = 17.78 technical drawings according to DIN specifications 9 ± 0.8 4.4 ± 0.2 3.6 ± 0.1 6.3 ± 0.1 Weight: ca. 1.08 g Creepage Distance: > 6 mm Air Path: > 6 mm after Mounting on PC Board 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9

Document Number: 83526 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 07.-Dec-07 7 CNY74-2H/CNY74-4H Optocoupler, Phototransistor Output, Multichannel Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.