CNY66_V01 VISHAY | Alldatasheet

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CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Rev. 2.3, 24-Jun-2022 1 Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Optocoupler, Phototransistor Output, Very High Isolation Voltage LINKS TO ADDITIONAL RESOURCES

DESCRIPTION

The CNY64, CNY65, and CNY66 consist of a phototransistor optically co upled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm.

APPLICATIONS

Circuits for safe protective se paration against electrical shock according to safety class II (reinforced isolation):

  • for appl. class I to IV at mains voltage ≤ 300 V
  • for appl. class I to IV at mains voltage ≤ 600 V
  • for appl. class I to III at mains voltage ≤ 1000 V according to DIN EN 60747-5-5 (VDE 0884-5), suitable for: - Switch-mode power supplies - Line receiver - Computer peripheral interface - Microprocessor system interface

FEATURES

  • Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak
  • Thickness through insulation ≥ 3 mm
  • Creepage current resistance according to VDE 0303 / IEC 60112 comparative tracking index: CTI ≥ 200
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 VDE STANDARDS These couplers perform safety functions according to the following equipment standards:
  • DIN EN 60747-5-5 (VDE 0884-5) Optocoupler for electrical safety requirements
  • IEC 60950/EN 60950 Office machines
  • VDE 0804 Telecommunication apparatus and data processing
  • IEC 60065 Safety for mains-operated electronic and related household apparatus
  • VDE 0700/IEC 60335 Household equipment
  • VDE 0160 Electronic equipment for electrical power installation
  • VDE 0750/IEC60601 Medical equipment AGENCY APPROVALS
  • UL / cUL 1577
  • DIN EN 60747-5-5 (VDE 0884-5) C E A C Top View 17187-4 CNY65 CNY66 CNY64 333DDD3 D 3D Models Models Related Documents Footprints

ORDERING INFORMATION

CNY 6 # x PART NUMBER PACKAGE OPTION CTR BIN AGENCY CERTIFIED / PACKAGE CTR (%) UL, cUL, VDE 50 to 300 63 to 125 100 to 200 DIP-4 HV, 400 mil, high isolation distance CNY64 CNY64A CNY64B DIP-4 HV, 600 mil, high isolation distance CNY65 CNY65A CNY65B DIP-4 HV, 700 mil, high isolation distance CNY66 - CNY66B DIP, 400 mil DIP, 600 mil DIP, 700 mil 10.16 mm 15.24 mm 17.8 mm

CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Rev. 2.3, 24-Jun-2022 2 Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note

  • Stresses in excess of the absolu te maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those give n in the operational sections of this document. Exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability Note
  • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of en gineering evaluation. Typical values are for information only and are not part of the testing requirements ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 5V Forward current I F 75 mA Forward surge current t p ≤ 10 μs I FSM 1.5 A Power dissipation P diss 120 mW Junction temperature T j 100 °C OUTPUT Collector emitter voltage V CEO 32 V Emitter collector voltage V ECO 7V Collector current I C 50 mA Collector peak current t p/T = 0.5, tp ≤ 10 ms I CM 100 mA Power dissipation P diss 130 mW Junction temperature T j 100 °C COUPLER Total power dissipation P tot 250 mW Ambient temperature range T amb -55 to +85 °C Storage temperature range T stg -55 to +100 °C Soldering temperature 2 mm from case, ≤ 10 s T sld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT input Forward voltage I F = 50 mA V F - 1.25 1.6 V Junction capacitance V R = 0, f = 1 MHz C j -5 0 p F output Collector emitter voltage I C = 1 mA V CEO 32 - - V Emitter collector voltage I E = 100 μA V ECO 7--V Collector emitter leakage current V CE = 20 V, IF = 0 A I CEO - - 200 nA coupler Collector emitter saturation voltage I F = 10 mA, IC = 1 mA V CEsat -- 0 . 3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc - 110 - kHz Coupling capacitance f = 1 MHz C k -0 . 3-p F

CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Rev. 2.3, 24-Jun-2022 3 Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Test Circuit, Saturated Operation Fig. 3 - Switching Times CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5 V, IF = 10 mA CNY64, CNY65, CNY66 CTR 50 - 300 % CNY64A CTR 63 - 125 % CNY65A CTR 63 - 125 % CNY64B CTR 100 - 200 % CNY65B CTR 100 - 200 % CNY66B CTR 100 - 200 % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time V S = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) t d -2 . 6- μ s Rise time V S = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) t r -2 . 4- μ s Fall time V S = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) t f -2 . 7- μ s Storage time V S = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) t s -0 . 3- μ s Turn-on time V S = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) t on -5- μ s Turn-off time V S = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) t off -3- μ s Turn-on time V S = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) t on -2 5-μ s Turn-off time V S = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) t off - 42.5 - μs Channel I Channel II 95 10900 RG = 50 tp tp = 50 µs T = 0.01 + 5 V IC = 5 mA; adjusted through input amplitude IF IF 50 100 Oscilloscope R L 1 M CL 20 pF Channel I Channel II 95 10843 RG = 50 Ω tp tp = 50 µs T = 0.01 + 5 V IC IF 50 Ω 1 kΩ IF = 10 mA Oscilloscope RL ≥ CL 20 pF 1 MΩ t p t t 10 % 90 % 100 % tr td ton ts tf toff IF IC tp Pulse duration td Delay time tr Rise time ton (= td + tr) Turn-on time ts Storage time t f Fall time toff (= ts + tf) Turn-off time 96 11698

CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Rev. 2.3, 24-Jun-2022 4 Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note

  • According to DIN EN 60747-5-5. This optocouple r is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits Fig. 4 - Safety Derating Diagram Fig. 5 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5 (VDE 0884-5); IEC60747-5-5 SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Climatic classification Accordin g to IEC 68 part 1 55 / 85 / 21 Pollution degree According to DIN VDE 0109 2 Comparative tracking index Insulation group IIIa CTI 200 Maximum rated withstanding isolation voltage According to UL1577, t = 1 min V ISO 8200 V RMS Tested withstanding isolation voltage According to UL1577, t = 1 s V ISO 13 900 V peak Maximum transient isolation voltage According to DIN EN 60747-5-5 V IOTM 12 000 V peak Maximum repetitive peak isolation voltage Accor ding to DIN EN 60747-5-5 V IORM 1450 V peak Isolation resistance Tamb = 25 °C, VIO = 500 V R IO ≥ 1012 Ω Tamb = 100 °C, VIO = 500 V R IO ≥ 1011 Ω Tamb = TS, VIO = 500 V R IO ≥ 109 Ω Output safety power PSO 250 mW Input safety current ISI 120 mA Input safety temperature TS 150 °C Creepage distance CNY64 ≥ 9.5 mm Clearance distance ≥ 9.5 mm Creepage distance CNY65 ≥ 14 mm Clearance distance ≥ 14 mm Creepage distance CNY66 ≥ 17 mm Clearance distance ≥ 17 mm Insulation thickness DTI ≥ 3m m Input to output test voltage, method B VIORM x 1.875 = VPR, 100 % production test with tM = 1 s, partial discharge < 5 pC VPR 3375 V peak Input to output test voltage, method A VIORM x 1.6 = VPR, 100 % sample test with tM = 10 s, partial discharge < 5 pC VPR 2880 V peak 100 125 150 175 200 225 250 0 25 50 75 100 125 150 175 200 TSI - Safety Temperature(°C) PSO (mW) ISI (mA) t 13930 t1, t2 = 1 s to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VIOTM Vpd VIOWM VIORM ttest tTr = 60 s tstres t3 t4

CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Rev. 2.3, 24-Jun-2022 5 Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 7 - Forward Current vs. Forward Voltage Fig. 8 - Normalized CTR (non-saturated) vs. Ambient Temperature Fig. 9 - Collector Dark Current vs. Ambient Temperature Fig. 10 - Collector Current vs. Forward Current Fig. 11 - Collector Current vs. Collector Emitter Voltage 02 5 5 0 7 5 120 200 240 280 100 Ptot - Total Power Dissipation (mW) Tamb - Ambient Temperature (°C) 160 Coupled device Phototransistor IR-diode 21995 0.1 100 1000 VF - Forward Voltage (V)96 11862 IF - Forward Current (mA) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature (°C)96 11911 VCE = 5 V IF = 10 mA NCTR - Normalized CTR (non-saturated) Normalized to CTR value: I F = 10 mA, VCE = 5 V, Tamb = 25 °C 100 1000 01 02 03 04 05 06 07 08 09 0 1 0 0 Tamb - Ambient Temperature (°C)96 12000 ICEO - Collector Dark Current, with Open Base (nA) VCE = 20 V IF = 0 0.1 1 10 0.01 0.1 100 IC - Collector Current (mA) IF - Forward Current (mA) 100 95 11012 VCE = 5 V 0.1 1 10 0.1 100 VCE - Collector Emitter Voltage (V) 100 95 11013 IC - Collector Current (mA) 5 mA 2 mA 1 mA IF = 50 mA 10 mA

CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Rev. 2.3, 24-Jun-2022 6 Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current Fig. 13 - Current Transfer Ratio vs. Forward Current Fig. 14 - Turn-on / Turn-off Time vs. Collector Current Fig. 15 - Turn-On / Turn-Off Time vs. Forward Current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 IC - Collector Current (mA)96 11912 VCEsat - Collector Emitter Saturation Voltage (V) CTR = 50 % 10 % 20 % 0.1 1 10 100 1000CTR - Current Transfer Ratio (%) IF - Forward Current (mA) 100 95 11015 VCE = 5 V 01 0 1 5 IF - Forward Current (mA) 95 11017ton / toff - Turn-On / Turn-Off Time (µs) Saturated operation V S = 5 V RL = 1 kΩ ton toff IC - Collector Current (mA) 95 11016 Non-saturated operation V S = 5 V RL = 100 Ω toff ton ton / toff - Turn-On / Turn-Off Time (µs) 2 6

CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Rev. 2.3, 24-Jun-2022 7 Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters FOR CNY64 technical drawings according to DIN specifications Weight: ca. 0.73 g 10.16 ± 0.2 12.8 ± 0.1 6.01 ± 0.1 9.1 ± 0.3 5.08 ± 0.2 7.2 ± 0.1 Cath A Coll E 0.4 0.5 14765 Drawing-No.: 6.544-5038.01-4 Issue: 2; 10.11.98

CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Rev. 2.3, 24-Jun-2022 8 Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters FOR CNY65 PACKAGE DIMENSIONS in millimeters FOR CNY66 PACKAGE MARKING (example of CNY65A) 14763 technical drawings according to DIN specifications Weight: ca. 1.40 g Cath A Coll E 0.4 0.5 9.6 ± 0.1 7.62 ± 0.2 6.1 ± 0.1 9.1 ± 0.3 15.24 ± 0.2 17.8 ± 0.1 Drawing-No.: 6.544-5036.01-1 Issue: 2; 10.11.98 14764 technical drawings according to DIN specifications Weight: ca. 1.70 g 17.8 ± 0.2 7.62 ± 0.2 Cath A Coll E 0.4 0.5 6.1 ± 0.1 9.1 ± 0.3 Drawing-No.: 6.544-5037.01-4 Issue: x; 10.11.98 CNY65A V YWW 84

CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Rev. 2.3, 24-Jun-2022 9 Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 16 - Tube Dimensions SOLDER PROFILES Fig. 17 - Wave Soldering Double Wave Profile According to J-STD-020 for Through-Hole Devices HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Floor life: unlimited Conditions: T amb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020 TUBE INFORMATION TYPE UNITS/TUBE TUBES/BOX UNITS/BOX CNY64 40 50 2000 CNY65 30 35 1050 CNY66 25 35 875 15914 13.2 3.6 15.3 0.6 8.7 With foamy rubber plugs Tolerance: ± 0.5 mm Length: 575 mm ± 2 mm 948626 100 1000 10000 100 200 300 0 50 100 150 200 250 Axis Title 1st line 2nd line 2nd line Temperature (°C) Time (s) 150 250

2 K/s

Full line: typical Dotted lines: process limits Lead temperature 235 °C to 260 °C100 °C to 130 °C ca. 200 K/s Forced cooling ca. 5 K/s ca. 2 K/s

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