CNY47 INTERSIL | Alldatasheet
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G E SOLID STATE it]
1 DE 3875081 001984
Optoelectionie Specifications ee 7s pons | : : T-Hl-33 Photon Coupled Isolator CNY47 , CNY47A 7 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor ‘The GE Solid State CNY47 and CNY47A are gallium arsenide roe Cele infrared emitting diodes coupled with a silicon photo-transistor in @ 1 7 \\s3 7 Ed Bets Gualinvline package. These devices are also available in Surface- if | IT |¢ ind sed 34 ‘Mount packaging. \\ 1 Lg 880 22 8 z . (96% Lp OS Voy Sie, absolute maximum ratings: (25 'C) ; jefe ele Ee fbr INFRARED EMITTING DIODE hati © sel TT |e | ssl tease (3 if ear 2 | Power Dissipation {00 milliwatts rot t [pos GE Lippert Forward Current (Continuous) 30 milliamps sot Kpos Ache, Remtmemees ' Forward Current (Peak) 3° ampere -- SEE nano (Pulse width 1 ps 300 pps) ste Reverse Voltage 3 wots oe Toms PHOTO-TRANSISTOR ‘Storage Temperature -55 to 150°C Power Dissipation #150 milliwatts Operating Temperature -55 to 100°C Voso 30 volts Lead Soldering Time (at 260°C) 10 seconds Vevo 50 volts Surge Isolation Voltage (Input to Output). Veo 4 volts 2828V (peak) 2000Vinms) Collector Current (Continuous) 430 railliamps |} _ Steady-State Isolation Voltage (Input to Output). vepetate 2.0mW/°C above 26°C ambient 1695V peat) 1200V ams) individual electrical characteristics (25°C) INFRARED EMITTING DIODE [re [max [ unis | PHOTO-TRANSISTOR [mn [rve[max.[ units | Forward Voltage volts Breakdown Voltage—Vipryceo volts (i = 10 mA) (Io= 10mA, I= 0) Breakdown Voltage—Vpr)cBo volts. (ic= 100uA, Ip =O) Reverse Current microamps || Breakdown Voltage-Varyeno volts (Wr =3¥) (ig = 100uA, Ip = 0) Collector Dark Current—Iczo nanoamps (Vcr = 10V, Ip= 0) Capacitance picofarads || Collector Dark Current—leso nanoamps (V=0,f= 1 MHz) (Vop = 10V, Ip = 0) Capacitance picofarads (Wee = 10V, F= 1 MHz) coupled electrical characteristics (25°C) DC Curreni Transfer Ratio (iy = 10mA, Vee = 4V) cny47 | 20 - 60 % cNYA7A | 40 - - % Saturation Voltage — Collector to Emitter (Ip = 10mA, Ic =2mA) CNY47 =} — ot 04 volts (lp =10mA, Io = 4A) CNY47A 04 volts [solation Resistance (Vio = 500Vp0) 100 - > | Bigzohms input to Output Capacitance (Vio = O,f= 1 MH2) - - picofarads Switching Speeds: Rise/Fall Time (Veg. = 10V, Ice = 2mA, Ry = 1000) - 2 - microseconds Rise/Fall Time (Vcp = 10V, Ion = 50uA, Ry = 1002) = 300 = nanoseconds @S VDE Approved to 0883/6.80 01 10b Certificate # 35025 0 ees
G E SOLID STATE OL DE—3875081 0019847 b CNY47, CNY47A —____ Optoelectronic Specifications TT 4U8s3 TYPICAL CHARACTERISTICS : Se SSS SS SSS SS | ee i = sowi7 TTT PTs 2% Fy an a A 4, OUTPUT CURRENT VS INPUT CURRENT 2. OUTPUT CURRENT V8 TEMPERATURE ——— i LL Ze eet SS Eee ——— CZAR Tn a PAH H ies toma | tr 1) oot ZAC TT = WpsVOLT8 Vp=PORMARD VoLTAGR= VOLTS eg couiteron To aMTTTER VOLTAGE VoUTa 3. INPUT CHARACTERISTICS 4, OUTPUT CHARACTERISTICS 110 | ' be et j or pe = «= 1 = ote ioe sat 7 a ee o Li Tut tT Tit cou Pt ‘ Cee? 00 o * I a ey Ips MPU CURMNT =A 6. SWITCHING SPEED V8 COLLECTOR CURRENT 6, OUTPUT CURRENT (Ieao) VS INPUT CURRENT (NOT SATURATED) ee