CNY17-1 QT | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

QT, PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS OO CNY17-1 CNY17-3 CNY17-2 CNY17-4 —$ $e“ ee PACKAGE DIMENSIONS DESCRIPTION non XX The CNY17 series consists of a Gallium Arsenide IRED i coupled with an NPN phototransistor. i 15° MAX dik $85 [ Features | MAX 610 03 tm oh i Gi = High isolation voltage [* 89 ‘| LL + 5300 VAC RMS—1 minute 538 2.33 7500 VAC PEAK—1 minute REF ® High BV.co minimum 70 volts ™ Current transfer ratio in selected groups: 254 19 CNY17-1: 40%- 80% we || [_tvP CNY17-2: 63%-125% CoV ae CNY17-3: 100%-200% THA 38 Max CNY17-4: 160%-320% as = Maximum switching time in saturation specified T 25a fs = Underwriters Laboratory (UL) recognized File #€90700 |, MIN Ae 056 124

040 DIMENSIONS IN mm srisoaa = Power supply regulators

© Digital logic inputs ™ Microprocessor inputs ™ Appliance sensor systems nove} 6)BAsE = Industrial controls caTH 2} ce (3) {4]en. (2079 Equivalent Circuit TOTAL PACKAGE INPUT DIODE Lead temperature Peak forward current 1-67

QT] PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS SS ELECTRO-OPTICAL CHARACTERISTICS (25°C Temperature Unless Otherwise Specified) INDIVIDUAL COMPONENT CHARACTERISTICS ‘CHARACTERISTIC ‘SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIONS INPUT DIODE Forward voltage Ve 1.3 1.50 v 1,=60 mA Forward voltage temp. AV, coefficient aT, -1.8 mv/°C Reverse voltage Va 6.0 15 v 1y=10 pA Junction capacitance [en 50 pF V,-=0 V, f=1 MHz 65 pF \\Vp=1 V, f=1 MHz Reverse leakage current Ia 35 10 BA Vn=3.0V OUTPUT TRANSISTOR DC forward current gain Hee 100 500 Vee=5 V, e=100 wA Breakdown voltage Collector to emitter BVceo 70 Vv =1.0 mA, =O Collector to base BV ceo 70 Vv k=10 pA, lp=O Emitter to collector BV eco 7 v [e=100pA, |-=0 Leakage current Collector to emitter lee 5 50 nA Voe=10V, =O Collector to base leo 20 nA Veo=10V, p=O Capacitance Collector to emitter 8 pF Voe=0, f=1 MHz Collector to base 20 pF Vee=5, f=1 MHz Emitter to base 10 pF Ves=0, f= 1 MHz DC CHARACTERISTICS ‘SYMBOL ___MIN. TP. MAX, UNITS 2 TEST CONDITIONS Current Transfer Ratio, collector to emitter cTR % =10 MA; Vee=5V CNY17-1 40 80 CNY17-2 63 125 CNY17-3 100 200 CNY17-4 160 320 Saturation voltage Vesisan 0.27 40 v 1=10 mA; |.=2.5 mA. AC CHARACTERISTICS ‘SYMBOL MIN. ‘TYP. MAX. ‘UNITS TEST CONDITIONS ‘SWITCHING TIMES. Non-saturated R.=100 0; k=2 mA; Turn-on time te 6.0 10 us Vec=10V ‘Turn-off time ta 5.5 10 us ‘See Fig. 10 and Fig. 11.

QT. PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS SN ELECTRO-OPTICAL CHARACTERISTICS (25°C Temperature Unless Otherwise Specified) (Cont'd) ‘AC CHARACTERISTICS ‘SYMBOL MIN. TYP. MAX. UNITS ‘TEST CONDITIONS SATURATED SWITCHING TIMES, Turn-on time ty CNY17-1 3.0 5.5 us 1,=20 MA, Voe=0.4 V CNY17-2, CNY17-3, CNY17-4 42 8.0 ws 1=10 MA, Voc=0.4 V Risectime t CNY17-1 2.0 40 us 1,=20 MA, Ve=0.4 V CNY17-2, CNY17-3, CNY17-4 3.0 60 us W=10MA,Va=0.4V Tum-off time te CNY17-1 18 34 BS 1,=20 MA, Vce=0.4 V CNY17-2, CNY17-3, CNY17-4 23 39 us k=10MA,Va=0.4V Fall-time t CNY17-1 W 20 us I-=20 MA, Vce=0.4 V CNY17-2, CNY17-3, CNY17-4 14 24 us 1=10 MA, Vce=0.4 V CHARACTERISTICS ‘SYMBOL MIN. TYP. MAX. UNITS. TEST CONDITIONS Isolation Voltage Vow 5300 Vic RMS ho<1 #A, 1 minute Veo 7500 Vac PEAK — |o<1 uA, 1 minute Isolation resistance Ren 10" ohms _Vio=500 VDC Isolation capacitance Co, 0.5 pF f=1 MHz ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) _ 14 =

2 LF] 125 :

a < i Voe = 0.3V gs A af B Vor = 5.0V S42 ail ca — f palsy gS, a ' ozs 5" 5 S$ 10 L 8 080 e | vg g S ool Lf ts) z z °° | ie 2 026 ° 2 $ 08 2 0102 05 1 2 5 10 20 50100 o FORWARD CURRENT — Ir (mA) 0 A 10 15 20 C1686 Ip — (mA) C1679 Current Forward Current

foul PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS _——— ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) rae a 3s Ip = 20mAq |\\ \\ > Ee wp SCOCE TTT | oF 14 7 26 - oA Eos \\ 4 N f J goo} 17} Ley g | i | nae TAA

2 CATT

-75 -50 -25 0 +25 +50 +75 +100 +125 0123456789 oo ompertars Te oslo onl Hoe i? ont Ll Bid otf VANE ah 2B col PMU ma HHL 5 ool Pe oe TH Be Ap iiss det Ut Sea aii g eH pe | ani 2 col 2 ot LL tn g oo PTT TT Bolo ol

2 LE 2 SCT Ti

Ree — BASE RESISTANCE — (1) Ree — BASE RESISTANCE — (1) C1681 C1682 A aN SCM ast LLICTTTEN Toe ALT ; \\

5 A $

3 , = z 10 i Fee) Meese ; ven fol 07 7 ‘Ru = 1009 8 Io = 2mA =o LAMM Til eto be 100K 1M o OOK 100K 1M «o Ree — BASE RESISTANCE — (1) Ree — BASE RESISTANCE — (0) C1683 C1684 1-70

QT PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS en ) ELECTRICAL CHARACTERISTIC CURVES (25°C Free Air Temperature Unless Otherwise Specified) (Cont'd) w Vce=10v | Vee = 10V

2 Rc= 1002 |

ia See Fig. 10) Q 1<10 ee z JE RL 2 | output FA 1 o8| t Ng iS 2 2 Z = 06 Ree & Fs i fa be z o 5 10 18 20 = Ic — ima) C1685 C1296 Fig. 9. Switching Time Fig. 10. Switching Time vs. IC Test Circuit PULSE WIDTH = 100 us DUTY CYCLE = 10% INPUT ov | | 1 | | ' OUTPUT 1 | 1 90% | ! 1 10% 1 I! tt | I Lat FY ton PY tor cr294 Fig. 11. Switching Time Waveforms