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Reflective Photosensors (Photo Reflectors) 1Publication date: October 2001 SHG00056AED CNB1011 Reflective photosensor I Features
- Ultraminiature, thin type: 2.29 mm × 2.9 mm (height: 0.88 mm) I Applications
- Non-contact point SW, object sensing I Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Rating Unit Input (Light Reverse voltage (DC) V R 6V emitting diode) Forward current (DC) I F 30 mA Power dissipation *1 PD 75 mW Output (Photo Collector current I C 20 mA transistor) Collector to emitter voltage VCEO 35 V Emitter to collector voltage VECO 6V Collector power dissipation *2 PC 75 mW Temperature Operating ambient temperature Topr −25 to +85 °C Storage temperature T stg −40 to +100 °C Parameter Symbol Conditions Min Typ Max Unit Input Forward voltage (DC) V F IF = 4 mA 1.15 1.3 V characteristics Reverse current (DC) IR VR = 3 V 10 µA Output Collector cutoff current I CEO VCE = 20 V 100 nA characteristics Transfer Collector current *1 IC VCE = 2 V, IF = 4 mA, d = 1 mm 40 243 µA characteristics Leakage current ID VCE = 2 V, IF = 4 mA 100 nA Collector to emitter saturation voltage VCE(sat) IF = 20 mA, IC = 0.1 mA 0.4 V Response time *2 tr VCC = 2 V, IC = 0.1 mA 40 µs tf RL = 1 000 Ω 50 I Electrical Characteristics Ta = 25°C ± 3°C Note) *1:Output current (I C) measurement *2: Response time measurement method (see figure below) circuit (see figure below) Input and output are handled electrically This product is not designed to withstand radiation VCC RLIF IC d = 1 mm evaporated Al Glass plate RL50 Ω VCC d = 1 mm evaporated Al Glass plate Sig. in Sig. out 10% 90% tr tf tr: Rise time tf: Fall time Sig. out Sig. in (Note) Tolerance unless otherwise specified is ±0.2 1: Anode 2: Cathode 3: Emitter 4: Collector C0.3 2.9±0 1 1.285 0.577 0.748 1.7 1.45 4-0.5 1.4 0.7 0.88±0.15 2.29±0 1 0.58±0.15 5.69±0 3 1.325 0.75 max. 0.75 max. 1.7 Note) *1: Input power derating ratio is 1.0 mW/ °C at Ta ≥ 25°C. *2: Output power derating ratio is 1.0 mW/ °C at Ta ≥ 25°C.
2 SHG00056AED
IF , IC Ta IF VF IC IF VF Ta IC VCE IC Ta ICEO Ta tr , tf IC IC d Ambient temperature Ta (°C) Forward current, collector current IF , IC (mA) 0 2 04 06 08 0 1 0 0−25 IF IC Ta = 25°C Forward voltage VF (V) Forward current IF (mA) Forward current IF (mA) Collector current IC (µA) 104 103 102 10 1 11 0 1 0 2 VCE = 2 V Ta = 25°C RL = 100 Ω d = 1 mm Ambient temperature Ta (°C) Forward voltage VF (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 −40 −20 0 40 60 20 80 100 4 mA 1 mA IF = 10 mA 03 214 5 6 104 103 102 8 7 Collector current IC (µA) Collector to emitter voltage VCE (V) 15 mA 10 mA 8 mA 6 mA 4 mA 2 mA IF = 20 mA Ta = 25°C Ambient temperature Ta (°C) Relative output current IC (%) 160 140 120 100 −40 −20 0 40 60 20 80 100 VCC = 2 V IF = 4 mA RL = 100 Ω 10 5 −20 0 20 40 60 10 2 10 3 10 4 10 1 100 80 Dark current ICEO (µA) Ambient temperature Ta (°C) VCC = 20 V Collector current IC (mA) Rise time, fall time tr , tf (µs) 103 102 10 2 10 1 11 0 VCC = 2 V Ta = 25°C : tr : tf 100 Ω 1 kΩ RL = 2 kΩ Distance d (mm) Relative output current IC (%) 110 100 2468 1 0 1 20 VCC = 2 V Ta = 25°C IF = 4 mA
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