CMXSH-3 CENTRAL | Alldatasheet
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Technical content
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three (3) Isolated Schottky Silicon Switching Diodes, manu- factured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for applications requiring low forward voltage drop. Marking code is XH3. MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 30 V Continuous Forward Current I F 100 mA Peak Repetitive Forward Current I FRM 350 mA Forward Surge Current, tp=10 ms I FSM 750 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=25V 90 500 nA IR VR=25V, TA=100°C 25 100 µA BVR IR=100µA 30 V VF IF=2.0mA 0.29 0.33 V VF IF=15mA 0.40 0.45 V VF IF=100mA 0.74 1.00 V CT VR=1.0V, f=1.0MHz 7.0 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns CMXSH-3 SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT SCHOTTKY SWITCHING DIODE SOT-26 CASE Central Semiconductor Corp. TM R1 ( 14-Sept 2000)
1) Anode 1 2) Anode 2 3) Anode 3 4) Cathode 3 5) Cathode 2 6) Cathode 1 Central Semiconductor Corp. TM MECHANICAL OUTLINE - SOT-26 CASE CMXSH-3 SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT SCHOTTKY SWITCHING DIODE All Dimensions in Inches (mm) Pin Configuration R1 ( 14-Sept 2000)