CMV1020 CALMIRCO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Tiny SOT23-5 Package
  • Guaranteed specs at 1.8V, 2.2V, 2.7V, 3V and 5V
  • Very Low Supply current typically 85µA@ 3V
  • Rail-to-Rail Output
  • Typical Total Harmonic Distortion of 0.02% at 3V
  • 1.66MHz Typical Gain Bandwidth Product
  • 1V/µS Typical Slew Rate Product Description The CMV1020 is a high performance CMOS opera- tional amplifier available in a small SOT23-5 pack- age. Operating with very low supply current, it is ideal for battery operated applications where power, space and weight are critical. With 1.66MHz Gain Bandwidth Product, 1V/µS Slew Rate, and a typical current consumption of only

Applications

  • Mobile Communications
  • Cellular Phones
  • Portable Equipment
  • Notebooks and PDAs C0930500 85µA, the CMV1020 provides excellent power- performance ratio for power sensitive applications. Ideal for use in personal electronics such as cellular handsets, pagers, cordless telephones and other products with limited space and battery power. PIN DIAGRAM NOITAMROFNIGNIREDROTRAPDRADNATS egakcaP rebmuNtraPgniredrO sniPe lytSl eeR&epaTg nikraMtraP 55 -32TOSR /Y0201VMC0 201 NON-INV INPUT OUTPUT 5-Pin SOT23-5 + V+ INV INPUT

©2000 California Micro Devices Corp. All rights reserved. 5/00215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com2 CALIFORNIA MICRO DEVICES CMV1020 Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating conditions indicate ratings for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Operating Characteristics. Note 2: Human Body Model, 1.5KΩ in series with 100pF . Note 3: Applies to both single-supply and split-supply operation. Continuous short ckt operation at elevated ambient temperatures can result in exceeding the maximum allowed junction temperature of 150°C. Note 4: The maximum power dissipation is a function of TJ (MAX), θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ (MAX) - TA)/θJA . All numbers apply for packages soldered directly to a PC board. )esiwrehtodeificepssselnu(SNOITIDNOCGNITAREPO retemaraPg nitaRt inU egatloVylppuS7 ot8.1V erutarepmeTnoitcnuJ − 58ot04 C° ecnatsiseRlamrehT5 23W /C° )1ETON(SGNITARMUMIXAMETULOSBA retemaraPg nitaRt inU )2etoN,MBH(noitcetorPDSE0 002V egatloVtupnIlaitnereffiD/ + − egatloVylppuSV niPtuptuo/tupnitaegatloVV (,3.0+)+V( −)− 3.0V egarotS:erutarepmeT )4etoN(noitcnuJgnitarepO )s01,gniredloS(daeL − 051ot56 521 062 Vot+V(egatloVylppuS −)5 .7V niPtupnItatnerruC5 A m )3etoN(niPtuptuOtatnerruC5 1A m sniPylppuSrewoPtatnerruC5 1A m

© 2000 California Micro Devices Corp. All rights reserved. 5/00 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 3 CALIFORNIA MICRO DEVICES CMV1020 8.1S CITSIRETCARAHCGNITAREPOLACIRTCELEV M1>LR,V0=-V,V8.1=+V,C°52=jTdeificepsesiwrehtosselnU( ΩΩΩΩΩ) lobmySr etemaraPs noitidnoCp yTt imiLt inU V SO egatloVtesffOtupnIV TUO V9.0=9 V m IB tnerruCsaiBtupnI 1A p I SO tnerruCtesffOtupnI 5.0A p R NI ecnatsiseRtupnI 1T Ω IS tnerruCylppuS 570 51A µ WBGt cudorPhtdiwdnaBniaG 531z HM AV niaGegatloVlangiSegraLV TUO V6.1otV2.0=0 80 6B d RSe taRwelSA V = − K001=LR,18 .02 .0V / sµ RRSPo itaRnoitcejeRylppuSrewoPV 2.1ptV9.0=+V V− = 9.0− otV − V2.1 V0=MCV 070 5B d RRMCo itaRnoitcejeRedoMnommoCV 8.0<MCV<V00 60 4B d V MC egnaRtupnIedoMnommoC 0 1.1 V DHTn oitrotsiDcinomraHlatoTA V = − V,zHK1=f,1 TUO p-pV1= K001=LR 620.0% I CS tnerruCtiucriCtrohStuptuOk niS/ecruoS5 A m VO liarrehtiemorfgniwStuptuOK 01=LR0 20 51V m 2S CITSIRETCARAHCGNITAREPOLACIRTCELEV2. M1>LR,V0=-V,V2.2=+V,C°52=jTdeificepsesiwrehtosselnU( ΩΩΩΩΩ) lobmySr etemaraPs noitidnoCp yTt imiLt inU V SO egatloVtesffOtupnIV TUO V1.1=9 V m IB tnerruCsaiBtupnI 1A p I SO tnerruCtesffOtupnI 5.0A p R NI ecnatsiseRtupnI 1T Ω IS tnerruCylppuS 080 61A µ WBGt cudorPhtdiwdnaBniaG 5.1z HM AV niaGegatloVlangiSegraLV TUO V2otV2.0=0 80 6B d RSe taRwelSA V = − K001=LR,19 .02 .0V / sµ RRSPo itaRnoitcejeRylppuSrewoPV 4.1ptV1.1=+V V− = − otV1.1 − V4.1 V0=MCV 070 5B d RRMCo itaRnoitcejeRedoMnommoCV 2.1<MCV<V00 60 4B d V MC egnaRtupnIedoMnommoC 0 5.1 V DHTn oitrotsiDcinomraHlatoTA V = − V,zHK1=f,1 TUO -pV4.1= p 20.0% I CS tnerruCtiucriCtrohStuptuOk niS/ecruoS7 A m VO liarrehtiemorfgniwStuptuOK 01=LR0 20 51V m

©2000 California Micro Devices Corp. All rights reserved. 5/00215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com4 CALIFORNIA MICRO DEVICES CMV1020 SCITSIRETCARAHCGNITAREPOLACIRTCELEV3 M1>LR,V0=-V,V3=+V,C°52=jTdeificepsesiwrehtosselnU( ΩΩΩΩΩ) lobmySr etemaraPs noitidnoCp yTt imiLt inU V SO egatloVtesffOtupnIV TUO V5.1=5 V m IB tnerruCsaiBtupnI 1A p I SO tnerruCtesffOtupnI 5.0A p R NI ecnatsiseRtupnI 1T Ω IS tnerruCylppuS 580 71A µ WBGt cudorPhtdiwdnaBniaG 66.1z HM AV niaGegatloVlangiSegraLV TUO V8.2otV2.0=5 85 6B d RSe taRwelSA V = − K001=LR,10 .15 2.0s µ/V RRSPo itaRnoitcejeRylppuSrewoPV 8.1otV5.1=+V V− = − otV5.1 − V8.1 V0=MCV 085 5B d RRMCo itaRnoitcejeRedoMnommoCV 2<MCV<V00 70 5B d V MC egnaRtupnIedoMnommoC 0 3.2 V DHTn oitrotsiDcinomraHlatoTA V = − V,zHK1=f,1 TUO p-pV2= K001=LR 20.0% I CS tnerruCtiucriCtrohStuptuOk niS/ecruoS5 1A m VO liarrehtiemorfgniwStuptuOK 01=LR0 20 51V m SCITSIRETCARAHCGNITAREPOLACIRTCELEV7.2 M1>LR,V0=-V,V7.2=+V,C°52=jTdeificepsesiwrehtosselnU( ΩΩΩΩΩ) lobmySr etemaraPs noitidnoCp yTt imiLt inU V SO egatloVtesffOtupnIV TUO V53.1=6 V m IB tnerruCsaiBtupnI 1A p I SO tnerruCtesffOtupnI 5.0A p R NI ecnatsiseRtupnI 1T Ω IS tnerruCylppuS 580 71A µ WBGt cudorPhtdiwdnaBniaG 6.1z HM AV niaGegatloVlangiSegraLV TUO V5.2otV2.0=5 85 6B d RSe taRwelSA V = − K001=LR,11 5 2.0s µ/V RRSPo itaRnoitcejeRylppuSrewoPV 56.1otV53.1=+V V− = − V56.1otV53.1 V0=MCV 070 5B d RRMCo itaRnoitcejeRedoMnommoCV 7.1<MCV<V00 65 4B d V MC egnaRtupnIedoMnommoC 0 2 V DHTn oitrotsiDcinomraHlatoTA V = − V,zHK1=f,1 TUO p-pV9.1= K001=LR 20.0% I CS tnerruCtiucriCtrohStuptuOk niS/ecruoS2 1A m VO liarrehtiemorfgniwStuptuOK 01=LR0 20 51V m

© 2000 California Micro Devices Corp. All rights reserved. 5/00 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 5 CALIFORNIA MICRO DEVICES CMV1020 SCITSIRETCARAHCGNITAREPOLACIRTCELEV5 M1>LR,V0=-V,V5=+V,C°52=jTdeificepsesiwrehtosselnU( ΩΩΩΩΩ) lobmySr etemaraPs noitidnoCp yTt imiLt inU V SO egatloVtesffOtupnIV TUO V5.2=5 V m IB tnerruCsaiBtupnI 1A p I SO tnerruCtesffOtupnI 5.0A p R NI ecnatsiseRtupnI 1T Ω IS tnerruCylppuS 0010 02A µ WBGt cudorPhtdiwdnaBniaG 8.1z HM AV niaGegatloVlangiSegraLV TUO V8.4otV2.0=0 90 7B d RSe taRwelSA V = − K001=LR,12 .13 .0s µ/V RRSPo itaRnoitcejeRylppuSrewoPV 8.2otV5.2=+V V− = − otV5.2 − V8.2 V0=MCV 085 5B d RRMCo itaRnoitcejeRedoMnommoCV 4<MCV<V00 70 5B d V MC egnaRtupnIedoMnommoC 0 3.4 V DHTn oitrotsiDcinomraHlatoTA V = − V,zHK1=f,1 TUO p-pV4= K001=LR 20.0% I CS tnerruCtiucriCtrohStuptuOk niS/ecruoS5 2A m VO liarrehtiemorfgniwStuptuOK 01=LR0 20 51V m

©2000 California Micro Devices Corp. All rights reserved. 5/00215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com6 CALIFORNIA MICRO DEVICES CMV1020 R L = 1MEG R L = 100K R L = 10K V+ = 5V V- = 0V TA = 25°C Open Loop Voltage Gain Response Frequency(Hz) A VOL (dB) V+ = 5V V- = 0V TA = 25°C R L = 1MEG R L = 100K R L = 10K Open Loop Phase Response Frequency(Hz) Phase (º) V+ = 5V V- = 0V R L = 100KΩ TA = 25°C Large Signal Pulse Response Time(µs) VOUT (V) Supply Current Versus Supply Voltage TA = 85ºC TA = 25ºC TA = -40ºC Supply Voltage(V) Supply Current (µA) Non Inverting Small Signal Response V+ = 5V V- = 0V TA = 25°C R L = 100K R L = 10K Time(µs) VOUT (V) Inverting Small Signal Response V+ = 5V V- = 0V T A = 25°C R L = 100K R L = 10K Time(µs) VOUT (V)

© 2000 California Micro Devices Corp. All rights reserved. 5/00 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 7 CALIFORNIA MICRO DEVICES CMV1020 VS = ±2.5V -2.5V < Vin < 2V TA = 25°C Common Mode Rejection Ratio Vin(V) VOS (mV) V+ = 5V V- = 0V TA = 25°C VOUT is referenced to V+ Current Sourcing Versus VOUT VOUT (V) IOUT V+ = 5V V- = 0V TA = 25°C VOUT is referenced to V- Current Sinking Versus VOUT VOUT (V) IOUT

©2000 California Micro Devices Corp. All rights reserved. 5/00215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com8 CALIFORNIA MICRO DEVICES CMV1020 Applications Information 1. Input Common Mode Range and Output Voltage Considerations The CMV1020 is capable of accommodating an input common mode voltage equal to one volt below the positive rail and all the way to the negative rail. It is also capable of output voltages equal to both power supply rails. Voltages that exceed the supply voltages will not cause phase inversion of the output, however, ESD diode clamps are provided at the inputs that can be damaged if static currents in excess of ±5mA are allowed to flow in them. This can occur when the magnitude of input voltage exceeds the rail by more than 0.3 volt. To preclude damage, an applications resistor, R S, in series with the input is recommended as illustrated in Figure 1 whose value for Rs is given by: VIN – (V+ + 0.3V) 5 mA For V+ (or V–) equal to 2.2 volts and VIN equal to 10 volts, RS should be chosen for a value of 2.5KΩ or greater. Figure 1. 2. Output Current and Power Dissipation Considerations The CMV1020 is capable of sinking and sourcing output currents in excess of 7mA at voltages very nearly equal to the rails. As such, it does not have any internal short circuit protection (which would in any event detract from its rail to rail capability). Although the power dissipation and junction temperature rise are small, a short analysis is worth investigating. Obviously, the worst case from a power dissipation point of view is when the output is shorted to either ground in a single rail application or to the opposite supply voltage in split rail applications. Since device only draws 60µA supply current (100µA maximum), its contribution to the junction temperature, T J, is negli- gible. As an example, let us analyze a situation in which the CMV1020 is operated from a 5 volt supply and ground, the output is “programmed” to positive saturation, and the output pin is indefinitely shorted to ground. In general: P DISS = (V+ – VOUT )*IOUT + IS*V+ Where: PDISS = Power dissipated by the chip V+ = Supply voltage V OUT = The output voltage IS = Supply Current The contribution to power dissipation due to supply current is 200µW and is indeed negligible as stated above. The primary contribution to power dissipation occurs in the output stage. V+ – VOUT would equal 5V – 0V = 5V, and power dissipation would be equal to 35mW. TJ = TA + θJA* PDISS Where: TA = The ambient temperature θJA = The thermal impedance of the package junction to ambient The SOT23 exhibits a θJA equal to 325°C/W. Thus for our example the junction rise would be about 11.4 which is clearly not a destructive situation even under an ambient temperature of 85°C. 3. Input Impedance Considerations The CMV1020 exhibits an input impedance typically in excess of 1 Tera Ω (1 X 10 12 ohms) making it very appropriate for applications involving high source impedance such as photodiodes and high output impedance transducers or long time constant integra- tors. High source impedances usually dictate large feedback resistors. But, the output capacitance of the source in parallel with the input capacitance of the CMV1020 (which is typically 3pF) create a parasitic pole with the feedback resistor which erodes the phase margin of the amplifier. The usual fix is to bypass, R F, as shown in Figure 2 with a small capaci- tor to cancel the input pole. The usual formula for calculating CF always results in a value larger than that is required: 1 1 2 Π RS CS 2 Π RF CF Since the parasitic capacitance can change between the breadboard and the production printed circuit board, we favor the use of a "gimmick", a technique

©2000 California Micro Devices Corp. All rights reserved. 5/00215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com10 CALIFORNIA MICRO DEVICES CMV1020 Figure 5