CMU401 VBSEMI | Alldatasheet
Document overview
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Technical content
P-Channel 60-V (D-S) MOSFET
FEATURES
- TrenchFET® Power MOSFET 100 % UIS Tested
APPLICATIONS
Load Switch Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. PRODUCT SUMMARY RDS(on) (VDS (V) ) ID (A)a Qg (Typ.) - 0.066 at VGS = - - 60
10 V 20
0.080 at VGS = - 4.5 V - 18 S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit VDrain-Source Voltage DS - 60 VVGate-Source Voltage GS ± 20 TC = Continuous Drain Current (TJ = 150 °C) 25 °C - 20 ID a TC = A 70 °C - 16 TA = 25 °C - 9TA = 70 °C b - 10IPulsed Drain Current DM 0 Avalanche Current Pulse - 3I L = 0.1 mH AS 5 ESingle Pulse Avalanche Energy AS 101 mJ TC = Continuous Source-Drain Diode Current 25 °C IS ATA = 25 °C TC = Maximum Power Dissipation 25 °C 35 PD a 20TC = W 70 °C a 3.0TA = 25 °C b 2TA = 70 °C b TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C THERMAL RESISTANCE RATINGS SymbParameter ol Typical Maximum Unit Maximum Junction-to-Ambientb RthJSteady State A 33 40 °C/W Maximum Junction-to-Case RSteady State thJC 0.98 1.2 CMU401-VB www.VBsemi.com TO-251 SDG Top View g - 11b - 29 - 2.1b a
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDrain-Source Breakdown Voltage DS VGS = 0 V, ID = - 250 µA - 60 V VDS/TVDS Temperature Coefficient J ID = - 250 µA 68 mV/°CVGS(th)/TVGS(th) Temperature Coefficient J - 5.2 VDS = VGS, IDVGS(tGate-Source Threshold Voltage h) = - 250 µA - 1.0 - 2.5 V VDS = 0 V, VGS = ± 20IGate-Source Leakage GSS V ± 100 nA VDS = - 60 V, VGS IZero Gate Voltage Drain Current DSS = 0 V - 1 µAVDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta VDS =-5 V, VGS ID(on) = - 10 V - 120 A Drain-Source On-State Resistancea VGS = - 10 V, ID RDS(on) = - 30 A 0.066 VGS = - 4.5 V, ID = - 20 A 0.080 Forward Transconductancea gfs VDS = - 15 V, ID = - 50 A 20 S Dynamicb CInput Capacitance iss VDS = - 25 V, VGS = 0 V, f = 1 MHz 1200 COutput C pFapacitance oss 200 CReverse Transfer Capacitance rss 150 VDS = - 30 V, VGS = - 10 V, ID QTotal Gate Charge g = - 55 A 40 nCVDS = - 30 V, VGS = - 4.5 V, ID = - 55 A QGate-Source Charge gs 16 QGate-Drain Charge gd 19 RGate Resistance g f = 1 MHz 5.2 td(oTur n-On Delay Time n) VDD = - 2 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 10 15 t ns Rise Time r 71 5 tTurn-Off Delay Time d(off) 70 110 tFall Time f 40 60 Drain-Source Body Diode Characteristics IContinuous Source-Drain Diode Current S - 6TC = 25 °C 6 A Pulse Diode Forward Currenta ISM - 150 ISVBody Diode Voltage SD = - 30 A - 1.- 1 5 V tBody Diode Reverse Recovery Time rr IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 45 68 ns QBody Diode Reverse Recovery Charge rr 59 120 nC tReverse Recovery Fall Time a 29 nstReverse Recovery Rise Time b 16 CMU401-VB www.VBsemi.com g
(25 °C, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current VGS =5 V 120 160 200 0 1234 5 ID - Drain Cu VDS - Drain-to-SourceVoltage (V) rrent (A) VGS =1 0t h ru 6 V VGS =4 V VGS =3 V 0 1234 5 ID VGS - Gate-to-Source Voltage (V) - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C 0.00 0.03 0.06 0.09 0.12 0.15 02 0 4 0 6 0 80 100 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) =1 0VGS V Tr =4 .5VGS V ansconductance Capacitance 100 01 2 2 4 3 6 4 8 60 gfs - Transcondu ID - Drain Current (A) ctance (S) TC = 125 °C TC = - 55 °C TC = 25 °C Crss 300 600 900 1200 1500 102 030 04 05 06 0 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss CMU401-VB www.VBsemi.com Transconductance 100 01 2 24 36 4 8 60 ID - Drain Current (A) gfs - Transconductance (S) TC = 125 °C TC = - 55 °C TC = 25 °C g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Charge Source-Drain Diode Forward Voltage Single Pulse Avalanche Current Capability vs. Time ID =5 5A 40 602 0 0 80 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS =3 0 V VDS =2 0 V TJ = 150 °C IS - Source Cu VSD - Source-to-Drain Voltage (V) rrent (A) 100 TJ = 25 °C 0.0001 1000 0.1 (A) IDav - Tin - (s) 0.001 0.01 0.1 100 IAV (A) at TJ = 25 °C IAV On-Resistance vs. Gate-to-So (A) at TJ = 150 °C urce Voltage On-Resistance vs. Gate-to-Source Voltage Drain-Source Breakdown Voltage vs. Junction Temperature 0.5 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) ID = 20 A =4 .5VGS V =1 0VGS V 0.0 0.00 0.02 0.04 0.06 0.10 02 4 6 8 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 150 °C ID =2 0A - 50 - 25 0 25 50 75 100 125 150 V(BR)DSS - (V ID = 10 mA TJ - Temperature (°C) CMU401-VB www.VBsemi.com g
(25 °C, unless otherwise noted) Thresho ld Voltage Power Derating, Junction-to-Case - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 VGS(th) Variance (V ID = 250 µA TJ - Temperature(°C) ID =1m A 140 120 100 0 25 50 75 100 125 150 Power (W TJ - Temperature (°C) Max. Drain Current vs. Case Temperature Safe Operating Area, Junction-to-Case 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1000 0.1 1 10 100 0.1 100 I D - Drain Current (A) TC = 25 °C Single Pulse 100 µs 10 ms 100 ms, DC Limited byR DS(on)* BVDSS Limited 10 µs 1m s Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.01 0.2 Duty Cycle = 0.5 Normalized Effectiv Square WaveP ulse Duration (s) e Transient Thermal Impedance 10-4 10-3 10-2 10-1 1 0.05 0.02 Single Pulse 0.1 CMU401-VB www.VBsemi.com g
Note: Dimension L3 is for reference only. b e L3 L1 L D c A /C0084/C0079/C0262/C0050/C0053/C0049/C0065/C0065/C0032 E /C0040/C0068/C0080/C0065/C0075/C0041 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e 2.28 BSC 0.090 BSC L 8.89 9.53 0.350 0.375 L1 1.91 2.28 0.075 0.090 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 www.VBsemi.com CMU401-VB g
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