CMT70N03 ETC1 | Alldatasheet

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N-CHANNEL Logic Level Power M OSFET 2004/04/13 Champion Microelectronic Corporation Page 1 APPLICATION

FEATURES

‹ Buck Converter High Side Switch ‹ Other Applications VDSS RDS(ON) Typ. ID 30V 6.6mΩ 71A ‹ Low ON Resistance ‹ Low Gate Charge ‹ Peak Current vs Pulse Width Curve ‹ Inductive Switching Curves ‹ Improved UIS Ruggedness PIN CONFIGURATION SYMBOL TO-252 Front View 1 2 3 GA TE DR AIN SOUR CE D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Source Voltage (Note 1) VDSS 30 V Drain to Current － Continuous Tc = 25℃, VGS@10V (Note 2) － Continuous Tc = 100℃, VGS@10V (Note 2) － Pulsed Tc = 25℃, VGS@10V (Note 3) ID ID IDM 284 A Gate-to-Source Voltage － Continue VGS ±20 V Total Power Dissipation Derating Factor above 25℃ PD 66 0.53 W W/℃ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.0 V/ns Operating Junction and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS TBD mJ Maximum Lead Temperature for Soldering Purposes TL 300 ℃ Maximum Package Body for 10 seconds TPKG 260 ℃ THERMAL RESISTANCE Symbol Parameter Min Typ Max Units Test Conditions RθJC Junction-to-case 1.9 ℃/W Water cool ed heatsink, P D adjust ed for a peak juncti on temperature of +150℃ RθJA Junction-to-ambient (PCB Mount) 50 ℃/W Minimum pad area, 2-oz copper, FR-4 circuit board, double sided RθJA Junction-to-ambient 62 ℃/W 1 cubic foot chamber, free air

N-CHANNEL Logic Level Power M OSFET 2004/04/13 Champion Microelectronic Corporation Page 2

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT70N03 Characteristic Symbol Min Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage ( V GS = 0 V, ID = 250 µA) VDSS 30 V Breakdown Voltage Temperature Coefficient, (Reference to 25℃, ID = 1mA) ΔVDSS/∆TJ 0.05 V/℃ Drain-to-Source Leakage Current (VDS = 30 V, VGS = 0 V, TJ = 25℃) (VDS = 24 V, VGS = 0 V, TJ = 125℃) IDSS µA Gate-to-Source Forward Leakage ( V GS = 20 V) IGSS 100 nA Gate-to-Source Reverse Leakage ( V GS = -20 V) IGSS -100 nA ON Characteristics Gate Threshold Voltage, ( V DS = VGS, ID = 250 µA) VGS(th) 1.0 3.0 V Static Drain-to-Source On-Resistance, (Note 5) ( V GS = 10 V, ID = 15A) ( V GS = 4.5 V, ID = 12A) RDS(on) 6.6 8.0 mΩ Forward Transconductance (VDS = 20V, ID = 12A) (Note 5) gFS 30 S Dynamic Characteristics Input Capacitance Ciss 2600 pF Output Capacitance Coss 480 pF Reverse Transfer Capacitance (VDS = 15 V, VGS = 0 V, f = 1.0 MHz) Crss 230 pF Total Gate Charge (VGS = 10 V) Qg 50 nC Total Gate Charge (VGS = 4.5 V) Qg 25 nC Gate-to-Source Charge Qgs 7.5 nC Gate-to-Drain Charge (VDS = 15 V, ID = 12 A) (Note5, 6) Qgd 8.5 nC Resistive Switching Characteristics Turn-On Delay Time td(on) TBD ns Rise Time tr TBD ns Turn-Off Delay Time td(off) TBD ns Fall Time (VDD = 15 V, ID = 15 A, VGS = 10 V, RG = TBDΩ) (Note 5,6) tf TBD ns Source-Drain Diode Characteristics Continuous Source Current (Body Diode ) IS 71 A Pulse Source Current (Body Diode) Integral pn-diode in MOSFET(Note 2) ISM 284 A Forward On-Voltage (IS = 12 A, VGS = 0 V) VSD 1.0 V Forward Turn-On Time trr 30 ns Reverse Recovery Charge (IF = 12 A, VGS = 0 V, di/dt = 100A/µs) (Note 5) Qrr 40 nC

N-CHANNEL Logic Level Power M OSFET 2004/04/13 Champion Microelectronic Corporation Page 3 Note 1: TJ = +25℃ to 150℃ Note 2: Current is calculated based upon maximum allowable junction temperature. Package current limitation is 30A. Note 3: Repetitive rating; pulse width limited by maximum junction temperature. Note 4: ISD = 12.0A, di/dt <200A/µs, VDD <BVDSS, TJ = +150℃ Note 5: Pulse width < 250µs; duty cycle < 2% Note 6: Essentially independent of operating temerpature. PACKAGE DIMENSION TO-252 12 3 L E C A V J U H D R B SK G PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE

N-CHANNEL Logic Level Power M OSFET 2004/04/13 Champion Microelectronic Corporation Page 4 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Us e of CMC products in such applications is understood to be fully at the risk of the cust omer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-3-567 9979 T E L :+886-2-8692 1591 FAX: +886-3-567 9909 FAX: +886-2-8692 1596