CMT4953G CHAMP | Alldatasheet
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P-CHANNEL ENHANCEMENT MODE MOSFET 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION
FEATURES
The CMT4953G provide the designer with the best combination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial mount applications and suited for low voltage applications such as DC/DC converters.
APPLICATIONS
Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM SO-8 Package Design PIN CONFIGURATION SYMBOL 8-PIN SOP (S08) Top View P-Channel MOSFET
ORDERING INFORMATION
*Note: G : Suffix for Pb Free Product
P-CHANNEL ENHANCEMENT MODE MOSFET 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 2 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain- Source Voltage VDS -30 V Gate- Source Voltage VGS ±20 V Continuous Drain Current1 TA=25℃ ID -4.5 A Pulsed Drain Current2 IDM -23 A Total Power Dissipation1 TA=25℃ PD 2 W Operating Junction Temperature Range TJ -55 to150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ Linear Derating Factor 0.02 ℃/W Thermal Resistance Junction-ambient1 (Max) Rthj-amb 62.5 ℃/W
P-CHANNEL ENHANCEMENT MODE MOSFET 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 3
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃. (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V VGS=-10V, ID=-4.6A - - 55 mΩRDS(ON) Static Drain-Source On-Resistancem2 VGS=-4.5V, ID=-3.6A - - 90 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -2.5 V gfs Forward Transconductance2 VDS=-5V, ID=-4.6A - 5 - S IDSS Drain-Source Leakage Current (Tj=25 C) VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Source Leakage Current VGS=±20V - - ±100 nA Qg Total Gate Charge2 - 11.7 - nC Qgs Gate-Source Charge - 2.1 - nC Qgd Gate-Drain ("Miller") Charge ID=-4.6A VDS=-15V VGS=-10V - 2.9 - nC td(on) Turn-on Delay Time2 - 9 - ns tr Rise Time - 10 - ns td(off) Turn-off Delay Time - 37 - ns tf Fall Time VDS=-15V ID=-1A RG=6Ω,VGS=-10V RD=15Ω - 23 - ns Ciss Input Capacitance - 582 - pF Coss Output Capacitance - 125 - pF Crss Reverse Transfer Capacitance VGS=0V VDS=-15V f=1.0MHz - 86 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.7A, VGS=0V - -0.84 -1.2 V Notes: 1.Surface mounted on FR4 Board , t≦2% 2.Pulse width ≦300us , duty cycle ≦2%.
P-CHANNEL ENHANCEMENT MODE MOSFET 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 4 TYPICAL CHARACTERISTICS
P-CHANNEL ENHANCEMENT MODE MOSFET 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 5
P-CHANNEL ENHANCEMENT MODE MOSFET 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 6 PACKAGE DIMENSION 8-PIN SOP (S08) PIN 1 ID θ θ
P-CHANNEL ENHANCEMENT MODE MOSFET 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 7 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Us e of CMC products in such applications is understood to be fully at the risk of the cust omer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-3-567 9979 T E L :+886-2-2788 0558 FAX: +88 6-3-567 9909 FAX: +886-2-2788 2985