CMT09N20 ETC1 | Alldatasheet

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2002/09/17 Preliminary Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION

FEATURES

This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ! Dynamic dv/dt Rating ! Repetitive Avalanche Rated ! Fast Switching ! Ease of Paralleling ! Simple Drive Requirements PIN CONFIGURATION SYMBOL TO-220 Top View GATE DRAIN SOURCE D S G N-Channel MOSFET

ORDERING INFORMATION

Drain to Current － Continuous － Pulsed (Note 1) ID IDM 9.0 A Gate-to-Source Voltage － Continue VGS ±20 V Total Power Dissipation Derate above 25℃ PD 0.59 W W/℃ Single Pulse Avalanche Energy (Note 2) EAS mJ Avalanche Current (Note 1) IAR 9.0 A Repetitive Avalanche Energy (Note 1) EAR 7.4 mJ Peak Diode Recovery dv/dt dv/dt 5.0 V/ns Operating and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Resistance － Junction to Case － Junction to Ambient θJC θJA 1.70 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300

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ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT09N20 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) V(BR)DSS 200 V Drain-Source Leakage Current (VDS = 200V, VGS = 0 V) (VDS = 160V, VGS = 0 V, TJ = 125℃) IDSS 250 μA Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) IGSSR -100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.4A) (Note 4) RDS(on) 0.40 Ω Forward Transconductance (VDS = 50V, ID = 5.4 A) (Note 4) gFS 3.8 mhos Input Capacitance Ciss 800 pF Output Capacitance Coss 240 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss pF Turn-On Delay Time td(on) 9.4 ns Rise Time tr ns Turn-Off Delay Time td(off) ns Fall Time (VDD = 100 V, ID = 5.9 A, RG = 12Ω, RD = 16Ω) (Note 4) tf ns Total Gate Charge Qg nC Gate-Source Charge Qgs 7.0 nC Gate-Drain Charge (VDS = 160V, ID = 5.9A VGS = 10 V) (Note 4) Qgd nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Qrr 1.1 2.2 µC Forward Turn-On Time ton Reverse Recovery Time IF = 5.9A, di/dt = 100A/µs , TJ = 25℃ (Note 4) trr 170 340 ns Diode Forward Voltage IS = 9.0A, VGS = 0 V, TJ = 25℃ (Note 4) VSD 1.5 V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 100V, VGS = 10V , starting TJ = 25℃, L=1.38mH, RG = 25Ω, IAS = 9.0A (3) ISD ≦ 9.0A, di/dt ≦ 120A/µs, VDD ≦ V(BR)DSS, TJ ≦ 150℃ (4) Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance

2002/09/17 Preliminary Champion Microelectronic Corporation Page 3 TYPICAL ELECTRICAL CHARACTERISTICS

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2002/09/17 Preliminary Champion Microelectronic Corporation Page 7 PACKAGE DIMENSION TO-220 e D E A b c φ L F A c D F φ e b Front View Side View E L PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE

2002/09/17 Preliminary Champion Microelectronic Corporation Page 8 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T EL: +886-3-567 9979 T EL: +886-2-8692 1591 FAX: +886-3-567 9909 FAX: +886-2-8692 1596