CMT08N50 ETC1 | Alldatasheet

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POWER FIELD EFFECT TRANSISTOR 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ‹ Robust High Voltage Termination ‹ Avalanche Energy Specified ‹ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ‹ Diode is Characterized for Use in Bridge Circuits ‹ IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View GATE DRAIN SOURCE D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current － Continuous － Pulsed ID IDM 8.0 A Gate-to-Source Voltage － Continue － Non-repetitive VGS VGSM ±20 ±40 V V Total Power Dissipation TO-220 TO-220FP PD 125 W Operating and Storage Temperature Range TJ, TSTG -55 to 150 Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25Ω) EAS 320 mJ Thermal Resistance － Junction to Case － Junction to Ambient θJC θJA 1.0 62.5 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260

POWER FIELD EFFECT TRANSISTOR 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 2

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT08N50 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μ A) V(BR)DSS 500 V Drain-Source Leakage Current (VDS = 500 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125℃) IDSS 250 μ A Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μ A) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) * RDS(on) 0.8 Ω Drain-Source On-Voltage (VGS = 10 V) (ID = 8.0 A) VDS(on) 5.0 7.2 V Forward Transconductance (VDS = 50 V, ID = 4.0A) * gFS 4.9 mmhos Input Capacitance Ciss 1450 1680 pF Output Capacitance Coss 190 246 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 45.4 144 pF Turn-On Delay Time td(on) ns Rise Time tr ns Turn-Off Delay Time td(off) 150 ns Fall Time (RGo + C17n = 9.1Ω) * tf ns Total Gate Charge Qg nC Gate-Source Charge Qgs 8.0 nC Gate-Drain Charge (VDS = 400 V, ID = 8.0 A, VGS = 10 V)* Qgd nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ns Reverse Recovery Time (IS = 8.0 A, VGS = 0 V, dIS/dt = 100A/µs) trr 320 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance

POWER FIELD EFFECT TRANSISTOR 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 3 TYPICAL ELECTRICAL CHARACTERISTICS

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POWER FIELD EFFECT TRANSISTOR 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 5

POWER FIELD EFFECT TRANSISTOR 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 6 PACKAGE DIMENSION TO-220 e D E A b c φ L F A c D F φ e b Front View Side View E L PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE TO-220FP K M H I J A C B D E G Q b R P O N M N Front View Side View Back View I J H K C B Q D E P G e A b O R e R1.60 R1.50 R1.50 R3.18± 0.10

POWER FIELD EFFECT TRANSISTOR 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 7 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan TEL : +886-3-567 9979 TEL : +886-2-8692 1591 FAX: +886-3-567 9909 FAX: +886-2-8692 1596