CMT04N60 ETC | Alldatasheet

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2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION

FEATURES

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. ! Higher Current Rating ! Lower Rds(on) ! Lower Capacitances ! Lower Total Gate Charge ! Tighter VSD Specifications ! Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View 1 23 GATE DRAIN SOURCE D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current － Continuous － Pulsed ID IDM 4.0 A Gate-to-Source Voltage － Continue － Non-repetitive VGS VGSM ±20 ±40 V V Total Power Dissipation TO-220 TO-220FP P D W Operating and Storage Temperature Range T J, TSTG -55 to 150 ℃ Single Pulse Drain-to-Source Avalanche Energy － T J = 25℃ (VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω) EAS mJ Thermal Resistance － Junction to Case － Junction to Ambient θJC θJA 1.30 100 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds T L 260 ℃

2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 2

ORDERING INFORMATION

CMT04N60N220FP TO-220 Full Package

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT04N60 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage ( V GS = 0 V, ID = 250 μA) V(BR)DSS 600 V Drain-Source Leakage Current (VDS =600 V, VGS = 0 V) IDSS 0.1 mA Gate-Source Leakage Current-Forward ( V gsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse ( V gsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage ( V DS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * R DS(on) 2.4 Ω Forward Transconductance (VDS = 50 V, ID = 2.0 A) * g FS 2.5 mhos Input Capacitance C iss 540 760 pF Output Capacitance C oss 125 180 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 8.0 20 pF Turn-On Delay Time t d(on) 12 20 ns Rise Time tr 7.0 10 ns Turn-Off Delay Time t d(off) 19 40 ns Fall Time (VDD = 300 V, ID = 4.0 A, VGS = 10 V, RG = 9.1Ω) * tf 10 20 ns Total Gate Charge Q g 5.0 10 nC Gate-Source Charge Q gs 2.7 nC Gate-Drain Charge (VDS = 480 V, ID = 4.0 A, VGS = 10 V)* Qgd 2.0 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) V SD 1.5 V Forward Turn-On Time t on ** ns Reverse Recovery Time (IS = 4.0 A, dIS/dt = 100A/µs) trr 655 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance

2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 3 TYPICAL CHARACTERISTICS

2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 4

2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 5 TO-220 TO-220FP

2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 6 PACKAGE DIMENSION TO-220 e D E A b c φ L F A c D F φ e b Front View Side View E E1L PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE TO-220FP K M H I J A C B D E G Q b R P O N M N Front View Side View Back View I J H K C B Q DE P G b1 b2 e A b O R e R1.60 R1.50 R1.50 R3.18 ± 0.10

2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 7 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-3-567 9979 T E L : +886-2-8692 1591 FAX: +886-3-567 9909 FAX: +886-2-8692 1596