CMSP3139KT-HF COMCHIP | Alldatasheet

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  • Surface mount package. - P-Channel switch with Low RDS(on). REV:A Page 1QW-JTR223 1 : Gate 2 : Source 3 : Drain Dimensions in inches and (millimeter) SOT-23 1 2 0.055(1.40) 0.047(1.20) 0.118(3.00) 0.110(2.80) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) P-Channel CMSP3139KT-HF Mechanical data - Case: SOT-23, molded plastic. - Mounting position: Any. Circuit Diagram G S D - Operated at low logic level gate dive. Maximum Ratings (at Ta=25°C unless otherwise noted) Drain-source voltage Typical gate-source voltage Unit SymbolParameter VDS VGS ID Value -20 ±12 V V AContinuous drain current (Note 1) Power dissipation (Note 1) PD mW Lead temperature for soldering purpose (1/8" duration for 10s) TL 260 °C RθJA 357 Thermal resistance, junction to ambient (Note 1) Pulsed drain current @tp=10µs 350 -1.2IDM A -0.66 °C/W Operating junction and storage temperature range TJ, TSTG -55 to +150

Comchip Technology CO., LTD. REV:A Page 2 MOSFET SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = -250µA Zero gate voltage drain current VDS = -20V, VGS = 0V BVDSS IDSS -20 -1.1 V Typ Electrical Characteristics (at Ta=25°C unless otherwise noted) Gate-body leakage current VGS = ±10V, VDS = 0V IGSS ±20 µA µA VDS = VGS, ID = -250µAGate threshold voltage (Note 2) VGS(th) V Reverse transfer capacitance Input capacitance Coss Crss VDS = -16V, VGS = 0V, f = 1MHZ Ciss 113 Output capacitance 15 pF 20.3 Turn-on delay time (Note 3) td(on) Turn-on rise time (Note 3) Turn-off delay time (Note 3) Turn-off fall time (Note 3) tr tf td(off) nSVGS = -4.5V, VDS = -10V ID = -200mA, RGEN = 10Ω 5.8 32.7 Static characteristics Dynamic characteristics (Note 4) Switching characteristics (Note 4) 4. Guaranteed by design, not subject to production. 2. Pulse width = 300µs, duty cycle = 2%. Notes: -0.35 -0.45 RDS(on)Drain-source on-state resistance (Note 2) mΩ VGS = -4.5V, ID = -1A 520430 VGS = -2.5V, ID = -0.8A 700624 VGS = -1.8V, ID = -0.5A 950 -1.2Drain forward voltage VSD VIS = -0.5A, VGS = 0V Forward transconductance (Note 2) gfs S1.2VDS = -10V, ID = -0.54A 170 3. Switching characteristics are independent of operating junction temperatures. 1. Surface mounted on FR4 board using the minimum recommended pad size. QW-JTR223

Comchip Technology CO., LTD. REV:A Page 3 Typical Rating and Characteristic Curves (CMSP3139KT-HF) MOSFET Drain Current, -ID (A) 0 0 Drain to Source Voltage, -VDS (V) Fig.1 - Output Characteristics Fig.2 - Transfer Characteristics Gate to Source Voltage, -VGS (V) Drain Current, -ID (A)On Resistance, RDS(ON) (mΩ) Fig.4 - On-Resistance vs. Gate to Source Voltage 21 3 5 800 300 700 1200 On Resistance, RDS(ON) (mΩ) 400 Fig.3 - RDS(ON) ― ID Gate to Source Voltage, -VGS (V) Source Current, -IS (A) Fig.5 - IS ― VSD Source to Drain Voltage, -VSD (V) 0.01 0.1 Threshold voltage, -VTH (V) Fig.6 - Threshold Voltage 0.8 0.4 Junction Temperature, Tj (°C) 25 7550 100 1 2 4 125 Drain Current, -ID (A) 2.0 2.5 1.0 1.5 300 500 400 600 700 ID= -250µA 0.6 0.2 QW-JTR223 21 3 54 TA=25°C Pulsed VGS= -1.5V VGS= -2V VGS= -2.5V VGS= -3V VGS= -4VVGS= -5V 500 600 800 900 1000 1100 TA=25°C Pulsed VGS= -1.8V VGS= -2.5V VGS= -4.5V Pulsed Ta=25°C Ta=100°C 0.5 900 1000 Ta=25°C Ta=100°C VDS= -3V Pulsed ID= -1A Pulsed Ta=25°C Ta=100°C

Comchip Technology CO., LTD. REV:A Page 4 Reel Taping Specification (mm) (inch) SOT-23 SYMBOL (inch) SOT-23 SYMBOL A (mm) B C d D D1 D2 E F P P0 P1 W W1 − 0.004 0.476 ± 0.039 D D1D2 A B C d E F P P0 P1 W 120° MOSFET QW-JTR223

Comchip Technology CO., LTD. REV:A Page 5 Marking Code Part Number Marking Code Suggested P.C.B. PAD Layout A C B D E C SIZE (inch) 0.035 (mm) 0.90 0.80 0.95 0.031 0.037 SOT-23 2.00 0.079 A B C D 2.90 0.114E Standard Packaging Case Type SOT-23 REEL (pcs) Reel Size (inch) 73,000 REEL PACK 39KCMSP3139KT-HF 39K MOSFET QW-JTR223 Solid dot = Control code