CMSP3139K-HF COMCHIP | Alldatasheet

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  • Extremely low switching loss. - Excellent stability and uniformity. REV:A Page 1QW-JTR175 Dimensions in inches and (millimeter) SOT-723 0.031(0.80) TYP. 0.022(0.55) 0.017(0.43) 0.033(0.85) 0.030(0.75) 0.015(0.37) 0.011(0.27) 0.049(1.25) 0.045(1.15) 0.011(0.27) 0.007(0.17) 0.049(1.25) 0.045(1.15) G S D 0.008(0.20) 0.003(0.08) Mechanical data - Case: SOT-723, molded plastic. - Mounting position: Any. Circuit Diagram Gate Drain Source 0.002(0.05) 0.000(0.00) Drain-source voltage Unit SymbolParameter VDS Value V Maximum Ratings (at Ta=25°C unless otherwise noted) Gate-source voltage VGS ID V ADrain current Pulsed drain current (Note 1) IDM A WPDTotal power dissipation (Note 2) TA=25°C TA=100°C Notes: 1. Pulse width limited by max. junction temperature. 2. PD is based on max. junction temperature, using junction case and junction ambient thermal resistance. -20 ±10 -0.5 -0.3 -2.5 TA=25°C TA=100°C 0.28 0.1 Junction and storage temperature range TJ, TSTG °C-55 to +150 3. The value of RθJA is measured with the device mounted on the minimum recommend pad size, in the still air environment with TA=25°C. The maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. Unit SymbolParameter Typ °C/W350RθJAThermal resistance junction to ambient (Note 3) Max 450Steady-state Thermal resistance

Comchip Technology CO., LTD. REV:A Page 2 MOSFET QW-JTR175 Electrical Characteristics (at TJ=25°C unless otherwise noted) SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = -250µABVDSS V Typ Static Parameters Zero gate voltage drain current VDS = -20V, VGS = 0V IDSS Gate-body leakage current VDS = -20V, VGS = 0V, TJ = 150°C IGSS µA RDS(ON) VGS = -4.5V, ID = -0.5A mΩStatic drain-source on-resistance Max. body-diode continuous current IS VDiode forward voltage Reverse transfer capacitance Input capacitance IS = -0.5A, VGS = 0VVSD Coss Crss pF A Output capacitance Dynamic Parameters VDS = -10V, VGS = 0V, f = 1MHz Ciss nC Qg VGS = -4.5V, VDS = -10V, ID = -0.5A Total gate charge Switching Parameters Turn-on delay time td(on) ns Turn-off delay time td(off) VGS = -2.5V, ID = -0.3A Gate threshold voltage VDS = VGS, ID = -250µAVGS(th) V Gate-source charge Gate-drain charge Qgs Qgd Reverse recovery charge Reverse recovery time Qrr trr Turn-off fall time Turn-on rise time tr tf IF = -0.5A, di / dt = 100A/µs VGS = -4.5V, VDD = -10V, ID = -0.5A, RGEN = 3Ω µA -20 -100 -0.35 -0.7 -1.1 850650 900 1200 -1.2 -0.5 1.24 0.37 0.27 0.97 ±10VGS = ±10V, VDS = 0V VGS = -1.8V, ID = -0.2A 1400 2000 -0.95

Comchip Technology CO., LTD. REV:A Page 3 MOSFET QW-JTR175 Typical Rating and Characteristic Curves (CMSP3139K-HF) Fig.2 - Transfer Characteristics Gate-Source Voltage, -VGS (V) Drain Current, -ID (A) 0.5 1.0 2.5 1.5 2.0 1 2 3 54 25°C 150°C VDS= -5V 0.4 0.8 Gate Charge, Qg (nC) Fig.4 - Gate Charge Gate-Source Voltage, -VGS (V) 1.2 VDS= -10V ID= -0.5A TJ=25°C Drain to Source Resistance, RDS(on) (Normalized) 0.5 0.9 1.3 Fig.6 - Normalized on Resistance -25 75 175 Junction Temperature, TJ (°C) -75 12525 VGS= -4.5V ID= -0.5A 0.5 0 1 Fig.1 - Output Characteristics Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) 2 3 5 1.0 2.5 1.5 2.0 TJ=25°C VGS= -5V -4V -3V -2V -1.5V 0 2010 100 Fig.3 - Capacitance Characteristics Capacitance, C (pF) Drain-Source Voltage, -VDS (V) 155 Ciss Coss Crss TJ=25°C Fig.5 - On Resistance vs Gate to Source Voltage 1.5 Drain to Source Resistance, RDS(ON) (Ω) 2.5 3.5 4.5 Gate-Source Voltage, -VGS (V) ID= -0.5A TJ=25°C

Comchip Technology CO., LTD. REV:A Page 4 MOSFET QW-JTR175 Typical Rating and Characteristic Curves (CMSP3139K-HF) 0 1.0 Fig.7 - RDS(on) vs Drain Current Drain to Source Resistance, RDS(ON) (Ω) 1.20.40.2 0.4 1.6 0.8 1.2 0.6 1.1 Fig.9 - Normalized Breakdown Voltage Max Drain to Source Voltage, BVDSS (Normalized) 1.05 1.0 Fig.11 - Current Dissipation Drain Current, -ID (A) 0.8 TJ=25°C VGS= -2.5V VGS= -4.5V Junction Temperature, TJ (°C) -25 75 175-75 12525 0.95 0.9 ID= -250µA Ambient Temperature, Ta (°C) 50 1501000-50 0.6 0.1 0.4 0.2 0.3 0.5 Drain Current, -ID (A) 0.5 Fig.8 - Forward Characteristics of Reverse Diode Source to Drain Voltage, -VSD (V) Reverse Drain Current, -IS (A) 0.1 0.75 1 1.25 1.5 1.0 0.6 1.4 1.2 0.8 Fig.10 - Normalized Threshold Voltage Threshold Voltage, -VGS(th) (Normalized)Power Dissipation, Ptot (W) Fig.12 - Power Dissipation 25°C 150°C Junction Temperature, TJ (°C) -25 75 175-75 12525 0.4 0.2 ID= -250µA Ambient Temperature, Ta (°C) 50 1501000-50 0.1 0.2 0.3

Comchip Technology CO., LTD. REV:A Page 5 MOSFET QW-JTR175 Typical Rating and Characteristic Curves (CMSP3139K-HF) 0.1 Fig.13 - Safe Operation Area 100101 0.01 0.1 Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) TJ(max)=150°C TA=25°C Single pulse Operation in this area is limited by RDS(on) DC 10mS 1mS 300µS 100µS

Reel Taping Specification SOT-723 SOT-723 SYMBOL SYMBOL (mm) (mm) (inch) (inch) A B C d D D1 D2 1.38 ± 0.05 0.055 ± 0.002 E F P P0 P1 W W1 8.00 + 0.30 − 0.10 0.315 + 0.012 − 0.004 Comchip Technology CO., LTD. REV:A Page 6 MOSFET C P A B W E F d DD1D2 120° Components Trailer Tape Leader Tape 100pcs Empty Pockets 200pcs Empty Pockets T 0.20 ± 0.02 0.008 ± 0.001 T QW-JTR175

(pcs) Reel Size (inch) SOT-723 Case Type 8,000 7 REEL PACK Comchip Technology CO., LTD. REV:A Page 7 MOSFET QW-JTR175 Suggested P.C.B. PAD Layout SIZE (inch) 0.012 (mm) 0.30 0.32 0.80 0.013 0.031 SOT-723 0.42 0.017 B C D A 1.00 0.039E B C D A E A