CMSP1013V3-HF COMCHIP | Alldatasheet

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  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.2V. - Compact industrtial standard SOT-323 surface mount package. - ESD protected gate. - Pb-free lead plating and halogen-free package. Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage Unit SymbolParameter VDS VGS ID PD Limits -20 ±10 -0.54 -55 ~ +150 V V A °C/W Pulsed drain current (Note 1) IDM 350 mWMaximum power dissipation @ TA=25°C (Note 2) 357 Continuous drain current @ TA=25°C, VGS=4.5V -1.5 Thermal resistance, junction-to-ambient Operating junction and storage temperature °C Rthja Tj, TSTG Notes: 1. Pulse width ≤ 10µs, duty cycle ≤ 2%. 2. Surface mounted on 1 in² copper pad of FR-4 board, t ≤ 5s.

Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 2SP-JTR08 MOSFET Electrical Characteristics (at TA=25°C unless otherwise noted) Symbol Test ConditionsMin Max Unit BVDSS IDSS *RDS(on) GFS *VSD Coss Crss *td(ON) *tr *td(OFF) *tf V µA S pF ns V VGS(th) V Typ *Qgs *Qgd nC *Qg *IS *ISM A Ciss IGSS * Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. Source-Drain Diode Dynamic Static -20 -0.5 -0.8 -1.2 0.5 ±10 -10 0.90.64 0.68 0.9 1.41.1 1.9 2.7 1.2 0.38 0.23 -0.77 -0.54 -1.5 -1.2 VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = -10V, ID = -200mA VGS = ±10V, VDS = 0V VDS = -20V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 55°C VGS = -4.5V, ID = -430mA VGS = -4V, ID = -300mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = -10V, VGS = 0V, f = 1MHz VDS = -6V, ID = -500mA, VGS = -4.5V, RG = 50Ω VGS = 0V, IS = -100mA VDS = -5V, ID = -250mA, VGS = -4.5V Ω

Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 3SP-JTR08 MOSFET Typical Characteristic (CMSP1013V3-HF) 0.4 0.8 1.2 1.6 0 1 2 3 4 5 6 7 8 9 10 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 0.2 0.4 0.6 0.8 1.2 Tj=25°C Tj=150°C 0.4 0.8 1.2 1.6 2.4 2.8 3.2 3.6 0 2 4 6 8 10 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Gate-Source Voltage, -VGS (V) Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) Drain Current, -ID (A) Reverse Drain Current, -IDR (A) Source-Drain Voltage, -VSD (V) Static Drain-Source On-State Resistance, RDS(ON) (Ω) Static Drain-Source On-State Resistance, RDS(ON) (Ω) Normalized Static Drain-Source On-State Resistance, RDS(ON) Normalized Drain-Source Breakdown Voltage, BVDSS Fig.1 - Typical Output Characteristics Fig.3 - Static Drain-Source On-State Resistance vs Drain Current Fig.2 - Breakdown Voltage vs Ambient Temperature Fig.4 - Reverse Drain Current vs Source-Drain Voltage Fig.5 - Static Drain-Source On-State Resistance vs Gate-Source Voltage Fig.6 - Drain-Source On-State Resistance vs Junction Temperature ID= -250µA VGS=0V VGS=0V -VGS= 5V, 4.5V, 4V -VGS= 3.5V -VGS= 3V -VGS= 2.5V -VGS= 1.5V -VGS= 1.8V -VGS= 2V VGS= -4.5V, ID = -500mA VGS= -2.5V, ID = -300mA ID = -500mA ID = -300mA ID = -10mA -VGS= 1.5V -VGS= 1.8V -VGS= 2.5V -VGS= 1.2V -VGS= 4.5V

Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 4SP-JTR08 MOSFET Typical Characteristic (CMSP1013V3-HF) 100 0.1 1 10 100 Coss Ciss Crss 0.4 0.6 0.8 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 0.01 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 25 50 75 100 125 150 175 TA=25°C, VGS=-4.5V, RθJA=357°C/W TA=25°C, TJ=150°C, VGS=-4.5V, RθJA=357°C/W Single pulse 100µs 1ms 10ms 100m DC TJ(MAX)=150°C TA=25°C, RθJA=357°C/W Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)Drain-Source Voltage, -VDS (V) Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) Maximum Drain Current, -ID (A) Gate-Source Voltage, -VGS (V) Capacitance, (pF)Power, (W) Pulse Width, (s) Total Gate Charge, Qg (nC) Normalized Threshold Voltage, -VGS(th) Fig.7 - Capacitance vs Drain-to-Source Voltage Fig.8 - Threshold Voltage vs Junction Temperature Fig.9 - Single Pulse Power Rating, Junction to Ambient Fig.10 - Gate Charge Characteristics Fig.11 - Maximum Safe Operating Area Fig.12 - Maximum Drain Current vs Junction Temperature ID= -250mA ID= -250µA VDS= -15V VDS= -10V VDS= -5V

Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 5SP-JTR08 MOSFET Typical Characteristic (CMSP1013V3-HF) 200 400 600 800 1000 1200 0 0.5 1 1.5 2 2.5 3 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 20 40 60 80 100 120 140 160 0.001 0.01 0.1 Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=357°C/W Ambient Temperature, TA (°C)Gate-Source Voltage, -VGS (V) Drain Current, -ID (mA) Square Wave Pulse Duration, t1 (s) Power Dissipation, PD (W) Fig.13 - Typical Transfer Characteristics Fig.14 - Power Derating Curve Fig.15 - Transient Thermal Response Curves -VDS=5V TJ= -40°C, 0°C, 25°C 150°C

Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 6SP-JTR08 MOSFET B C d D D2D1 SOT-323 SYMBOL A (mm) (inch) 2.142 ± 0.039 4.00 ± 0.10 1.55 ± 0.10 178.00 ± 2.00 SOT-323 SYMBOL (mm) E F P P0 P1 W W1 13.00 ± 1.00 12.30 ± 1.00 d F E D1 D2 D C C A P B P0 P1 W Reel Taping Specification 120°

Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 7SP-JTR08 MOSFET Marking Code Part Number CMSP1013V3-HF Marking Code TW Standard Packaging Case Type SOT-323 3,000 REEL ( pcs ) Reel Size (inch) REEL PACK Suggested P.C.B. PAD Layout SIZE (inch) 0.020 (mm) 0.50 0.80 1.30 0.031 0.012 SOT-323 2.20 0.087 A B C D B D C A TW XX = Control code XX