CMSH9930Q8-HF | DigiCamel IC Datasheet

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CMSH9930Q8-HF COMCHIP | Alldatasheet

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REV:A Page 1QW-JTR168 Mechanical data - Case: SOP-8, molded plastic. - Mounting position: Any. - Simple drive requirement. - Low on-resistance. - Fast switching speed. 0.061(1.55) 0.053(1.35) 0.069(1.75) 0.053(1.35) 0.010(0.25) 0.004(0.10) 0.020(0.51) 0.013(0.33) 0.010(0.25) 0.007(0.17) 0.201(5.10) 0.185(4.70) 0.157(4.00) 0.150(3.80) 0.244(6.20) 0.228(5.80) 0.050(1.27) 0.016(0.40) 0.050(1.27) BSC.Circuit Diagram G:Gate S:Source D:Drain P2G N2D/P2D P1S/P2S P1G N1S/N2S N1D/P1D N1G N2G Maximum Ratings (at TC=25°C unless otherwise noted) Gate-source voltage Unit SymbolParameter BVDSS VGS ID V V A Pulsed drain current (Note 1) IDM A Continuous drain current (Note 2) TA = 25°C, VGS = 10V (-10V) TA = 70°C, VGS = 10V (-10V) PD RθJC TJ, TSTG W °C/W Power dissipation RθJA °C/W TA = 25°C TA = 70°C N-Channel P-Channel 30Drain-source breakdown voltage Max. thermal resistance, junction to case Max. thermal resistance, junction to ambient (Note 2) Operating junction and storage temperature range ±20 4.8 -30 ±20 -4.4 -3.5 24 -20 1.38 0.88 -55 to +150 Notes: 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on 1in² copper pad of FR-4 board, pulse width ≤ 10s.

N-Channel Electrical Characteristics (at TC=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage Zero gate voltage drain current Forward transconductance (Note 1) Reverse transfer capacitance Input capacitance Turn-on delay time (Note 1) Turn-oﬀ delay time (Note 1) Rise time (Note 1) Fall time (Note 1) BVDSS IDSS RDS(ON) GFS Coss Crss td(ON) tr td(OFF) tf V µA Gate-source leakage IGSS nA S pF ns Ciss Body Diode Gate-source threshold voltage VGS(th) V Output capacitance Typ Static Dynamic mΩStatic Drain-source on-state resistance (Note 1) Qgs Qgd nC QgTotal gate charge (Note 1) Gate-source charge (Note 1) Gate-drain charge (Note 1) trr Qrr nC nsReverse recovery time (Note 1) Recovered charge (Note 1) Diode forward voltage (Note 1) VSD V Comchip Technology CO., LTD. REV:A Page 2QW-JTR168 Notes: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%. VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA 1.0 2.5 VGS = ±20, VDS = 0V ±100 VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 70°C ID = 5A, VGS = 10V ID = 3A, VGS = 4.5V VDS = 5V, ID = 5A 6.7 VDS = 25V, VGS = 0V, f = 1MHz 750496 VDS = 15V, ID = 1A, VGS = 10V, RG = 6Ω 6.2 17.2 30.2 7.6 VDS = 15V, ID = 6A, VGS = 4.5V 5.6 1.9 2.1 VGS = 0V, IS = 1.2A 0.78 1.2 IF = 5A, dIF/dt = 100A/µs 7.7 3.3

P-Channel Electrical Characteristics (at TC=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage Zero gate voltage drain current Forward transconductance (Note 1) Reverse transfer capacitance Input capacitance Turn-on delay time (Note 1) Turn-oﬀ delay time (Note 1) Rise time (Note 1) Fall time (Note 1) BVDSS IDSS RDS(ON) GFS Coss Crss td(ON) tr td(OFF) tf V µA Gate-source leakage IGSS nA S pF ns Ciss Body Diode Gate-source threshold voltage VGS(th) V Output capacitance Typ Static Dynamic mΩStatic Drain-source on-state resistance (Note 1) Qgs Qgd nC QgTotal gate charge (Note 1) Gate-source charge (Note 1) Gate-drain charge (Note 1) trr Qrr nC nsReverse recovery time (Note 1) Recovered charge (Note 1) Diode forward voltage (Note 1) VSD V Comchip Technology CO., LTD. REV:A Page 3QW-JTR168 Notes: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%. VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA -30 -1.0 -2.5 VGS = ±20, VDS = 0V ±100 VDS = -30V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 70°C -25 ID = -4A, VGS = -10V ID = -2A, VGS = -4.5V VDS = -10V, ID = -5A 7.8 VDS = -25V, VGS = 0V, f = 1MHz 900597 VDS = -15V, ID = -1A, VGS = -10V, RG = 6Ω 5.6 17.6 64.4 33.8 VDS = -15V, ID = -4.4A, VGS = -4.5V 6.7 2.2 2.5 IF = -4.5A, dIF/dt = 100A/µs 7.7 3.0

N-Channel Typical Rating and Characteristic Curves (CMSH9930Q8-HF) MOSFET Comchip Technology CO., LTD. REV:A Page 4QW-JTR168 Fig.2 - Breakdown Voltage vs Ambient Temperature Junction Temperature, TJ (°C) Normalized Drain-Source Breakdown, BVDSS -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 Fig.1 - Typical Output Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 1 2 3 4 5 ID=250µA, VGS=0V VGS=2.5V 3.5V 10V, 9V, 8V, 7V, 6V, 5V, 4V Fig.4 - Reverse Drain Current vs Source-Drain Voltage Reverse Drain Current, IDR (A) 0 4 8 12 16 20 0.6 0.8 1.0 1.2 0.2 Fig.3 - Static Drain-Source On-State Resistance vs Drain Current Drain Current, ID (A) Static Drain-Source On-State Resistance, RDS(on) (mΩ) 0.01 0.1 1 10 100 100 Fig.6 - Drain-Source On-State Resistance vs Junction Temperature Junction Temperature, TJ (°C) Normalized Static Drain-Source On-State Resistance, RDS(on) -75 -50 -25 0 25 50 75 100 125 150 175 0.8 1.2 2.4 Fig.5 - Static Drain-Source On-State Resistance vs Gate-Source Voltage Gate-Source Voltage, VGS (V) Static Drain-Source On-State Resistance, RDS(on) (mΩ) 0 2 4 6 8 10 100 200 400 350 300 250 150 VGS=4.5V VGS=10V Source-Drain Voltage, VSD (V) 0.4 VGS=0V TJ=150°C TJ=25°C 0.4 1.6 2.0 VGS=10V, ID=5A RDSON@TJ=25°C:17mΩ Typ. ID=5A

N-Channel Typical Rating and Characteristic Curves (CMSH9930Q8-HF) MOSFET Comchip Technology CO., LTD. REV:A Page 5QW-JTR168 Fig.8 - Threshold Voltage vs Junction Temperature Junction Temperature, TJ (°C) -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 Fig.7 - Capacitance vs Drain-to-Source Voltage Drain-Source Voltage, VDS (V) Capacitance, (pF) 0 5 10 15 20 30 100 1000 Fig.10 - Gate Charge Characteristics Total Gate Charge, Qg (nC) 0 4 8 12 14 Fig.9 - Forward Transfer Admittance vs Drain Current Drain Current, ID (A) Forward Transfer Admittance, GFS (S) 0.001 0.1 1 10 100 Fig.12 - Maximum Drain Current vs Junction Temperature Junction Temperature, TJ (°C) Maximum Drain Current, ID (A) 25 50 75 100 125 150 175 Fig.11 - Maximum Safe Operating Area Drain-Source Voltage, VDS (V) Drain Current, ID (A) 100 Gate-Source Voltage, VGS (V) Ciss Crss Coss Normalized Threshold Voltage, VGS(th) 0.4 ID=1mA ID=250µA 2 6 10 VDS=15V, ID=6A TA=25°C VGS=10V RθJA=90°C/W 0.1 0.01 0.01 VDS=5V Pulsed Ta=25°C 0.1 1 100.01 100 0.1 0.01 RDSON Limited DC 100ms 10ms 1ms 100µs TA=25°C, TJ=150°C VGS=10V, RθJA=90°C/W Single pulse

N-Channel Typical Rating and Characteristic Curves (CMSH9930Q8-HF) MOSFET Comchip Technology CO., LTD. REV:A Page 6QW-JTR168 Fig.14 - Typical Transfer Characteristics Gate-Source Voltage, VGS (V) Fig.13 - Single Pulse Power Rating, Junction to Ambient (Note on Page 1) Pulse Width, (s) Power, (W) 100 1000 Drain Current, ID (A) 1 2 3 4 5 VDS=10V 0.001 0.1 1 100.01 100 1000 TJ(MAX)=150°C TA=25°C RθJA=90°C/W

P-Channel Typical Rating and Characteristic Curves (CMSH9930Q8-HF) MOSFET Comchip Technology CO., LTD. REV:A Page 7QW-JTR168 Fig.16 - Breakdown Voltage vs Ambient Temperature Junction Temperature, TJ (°C) Normalized Drain-Source Breakdown, -BVDSS -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 Fig.15 - Typical Output Characteristics Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) 0 1 2 3 4 5 VGS= -2.5V -3V -3.5V Fig.18 - Reverse Drain Current vs Source-Drain Voltage Reverse Drain Current, -IDR (A) 0.6 0.8 1.0 1.2 0.2 Fig.17 - Static Drain-Source On-State Resistance vs Drain Current Drain Current, -ID (A) Static Drain-Source On-State Resistance, RDS(on) (mΩ) 0.01 0.1 1 10 100 100 Fig.20 - Drain-Source On-State Resistance vs Junction Temperature Junction Temperature, TJ (°C) Normalized Static Drain-Source On-State Resistance, RDS(on) -75 -50 -25 0 25 50 75 100 125 150 175 0.8 1.2 Fig.19 - Static Drain-Source On-State Resistance vs Gate-Source Voltage Gate-Source Voltage, -VGS (V) Static Drain-Source On-State Resistance, RDS(on) (mΩ) 0 2 4 6 8 10 100 200 500 350 300 250 150 VGS= -4.5V VGS= -10V Source-Drain Voltage, -VSD (V) 0.4 TJ=150°C TJ=25°C 0.4 1.6 2.0 ID= -4A -ID=250µA, VGS=0V 2 4 6 8 10 VGS=0V 1.0 1.4 0.6 1.8 RDSON@TJ=25°C:35mΩ Typ. VGS= -10V, ID= -4A 400 450 -4V

P-Channel Typical Rating and Characteristic Curves (CMSH9930Q8-HF) MOSFET Comchip Technology CO., LTD. REV:A Page 8QW-JTR168 Fig.22 - Threshold Voltage vs Junction Temperature Junction Temperature, TJ (°C) -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.6 Fig.21 - Capacitance vs Drain-to-Source Voltage Drain-Source Voltage, VDS (V) Capacitance, (pF) 0 5 10 15 20 30 100 1000 Fig.24 - Gate Charge Characteristics Total Gate Charge, Qg (nC) 0 4 8 12 14 Fig.23 - Forward Transfer Admittance vs Drain Current Drain Current, -ID (A) Forward Transfer Admittance, GFS (S) 0.001 0.1 1 10 Fig.26 - Maximum Drain Current vs Junction Temperature Junction Temperature, TJ (°C) Maximum Drain Current, -ID (A) 25 50 75 100 125 150 175 Fig.25 - Maximum Safe Operating Area Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) 100 Gate-Source Voltage, -VGS (V) Ciss Crss Coss Normalized Threshold Voltage, -VGS(th) 0.4 ID= -1mA ID= -250µA 2 6 10 VDS= -15V, ID= -4.4A TA=25°C VGS= -10V RθJA=90°C/W 0.1 0.01 0.01 0.1 1 100.01 100 0.1 0.01 1.4 VDS= -10V Pulsed Ta=25°C DC 100ms 10ms 1ms 100µs TA=25°C, TJ=150°C VGS= -10V, RθJA=90°C/W Single pulse RDSON Limited

Comchip Technology CO., LTD. REV:A Page 9QW-JTR168 P-Channel Typical Rating and Characteristic Curves (CMSH9930Q8-HF) MOSFET Fig.28 - Typical Transfer Characteristics Gate-Source Voltage, -VGS (V) Fig.27 - Single Pulse Power Rating, Junction to Ambient (Note on Page 1) Pulse Width, (s) Power, (W) 100 1000 Drain Current, ID (A) 1 2 3 4 5 VDS= -10V 0.001 0.1 1 100.01 100 1000 TJ(MAX)=150°C TA=25°C RθJA=90°C/W

Reel Taping Speciﬁcation MOSFET Comchip Technology CO., LTD. Page 10QW-JTR168 REV:A T C P A d W P1 P0 B E F o 120 DD1D2 SYMBOL (mm) (inch) SYMBOL (mm) (inch) A B dC D D2D1 E F P0P P1 WT W1 − 0.0040.157 ± 0.004 Trailer Device Leader 400mm (min)160mm (min) Direction of Feed SOP-8 SOP-8

Case Type REEL Reel Size( pcs ) (inch) SOP-8 4,000 13 Suggested P.C.B. PAD Layout SIZE (inch) 0.024 (mm) 0.60 1.52 1.27 0.060 0.050 SOP-8 4.00 0.157 A B C D 7.00 0.276E B D C E A MOSFET Part Number Marking Code Comchip Technology CO., LTD. Page 11 XXXX = Control code 9930 XXXX Pin 1 QW-JTR168 REV:A CMSH9930Q8-HF 9930

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MOSFET REV:A

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Source title CMSH9930Q8-HF Datasheet(PDF) - Comchip Technology

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