CMSBN12209-HF COMCHIP | Alldatasheet

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  • It is ESD protected. - This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. CSP Enhancement Mode Power MOSFET S1 S2 REV:A Page 1QW-JTR209 S1S1S1S1 S2S2S2S2 7 8 1 2 3 4 5 6 9 10 11 12 13 14 Dimensions in inches and (millimeter) CSPC3028-14 Pin Assignment 814 Bottom ViewTop View Left-right turn - Pin 1, 2, 3, 4, 5, 6 : Source 1 - Pin 9, 10, 11, 12, 13, 14 : Source 2 - Pin 7 : Gate 1 - Pin 8 : Gate 2 - Solid dot : Pin 1 Top Back 0.120(3.06) 0.118(3.00) 0.110(2.80) 0.108(2.74) 0.006(0.14) 0.033(0.8375) 0.008(0.20) 0.003(0.07) 0.036(0.925) 0.042(1.075) 0.060(1.525) 0.008(0.20) 0.008(0.206) 0.016(0.406) ∅0.010(0.25) CMSBN12209-HF

Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Min MaxTyp Unit Source to source breakdown voltage IS = 1mA, VGS = 0V VSS = 10V, VGS = 0V BVSSS Zero-gate voltage source current ISSS 1 12 V 0.35 Gate to source leakage current VS2S1 = 6V, IS1 = 2.3mA Source to source on-state resistance VGS = 4.5V, IS = 3A VGS = 2.5V, IS = 3A Static parameters VGS = 3.8V, IS = 3A 1.4 µA mΩ 1.69 1.56 1.4 1.6 Turn-on delay time (Note 1) Turn-off delay time (Note 1) Turn-on rise time (Note 1) Turn-off fall time (Note 1) td(on) tr td(off) tf VDD = 10V, IS = 4A, VGS = 4.5V 1.2 5.7 15.4 µS QgTotal gate charge (Note 1) 75 0.77 VSS = 0V, VGS = ±8VIGSS VTHGate to source threshold voltage (Note 1) nC µA ±10 VGS = 3.1V, IS = 3A VSS = 10V, IS = 10A, VGS = 4.5V V 1.2 1.3 1.82 3.20 CSP Enhancement Mode Power MOSFET Comchip Technology CO., LTD. REV:A Page 2QW-JTR209 Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss RSS(on) Crss Qg1s1Gate1-source1 charge (Note 1) VF(S-S)Diode forward voltage V VG1S1 = 0V, VG2S2 = 4.5V, IS = 3A 1.0 Qg1s2Gate1-source2 charge (Note 1) 36 pF Notes: 1. When FET1 is measured, G2 and S2 are short-circuited. 1.0 1.1 0.8 0.9 VS1S2 = 6V, IS2 = 2.3mA 6315 1393 1106 VSS = 10V, VGS = 0V, f = 1kHz VG1S1 = 4.5V, VG2S2 = 0V, IS = 3A VDD=10V RL=2.5Ω Vout Vin PW=100μS D=1% 10 % 90 % 90 % 10 % 90 % 10 % td(on) tr td(off) tf Vin Vout 4.5V IS=4A

Fig.4 - RSS(ON) ― VGS Gate to Source Voltage, VGS (V) On-Resistance, RSS(ON) (mΩ) 0 62 Fig.3 - RSS(ON) ― IS Source Current, IS (A) On-Resistance, RSS(ON) (mΩ) 2 4 6 10 1.6 2.0 1.8 1.4 Fig.2 - IS ― VGS Gate to Source Voltage, VGS (V) Source Current, IS (A) Fig.1 - IS ― VSS Source to Source Voltage, VSS (V) Source Current, IS (A) 0 0.005 0.01 0.015 2.01.0 0.02 1.50.5 Typical Rating and Characteristic Curves (CMSBN12209-HF) CSP Enhancement Mode Power MOSFET Fig.6 - Threshold Voltage Junction Temperature, TJ (°C) Threshold Voltage, VTH (V) 25 50 12575 100 0.6 1.2 1.0 0.2 0.8 0.4 Body Diode Forward Voltage, VF (V) Diode Forward Current Current, IF (A) 0 0.4 0.8 100 0.01 0.1 Fig.5 - IF ― VF 1.00.2 0.6 Comchip Technology CO., LTD. REV:A Page 3QW-JTR209 TJ=25°C Pulsed VGS=4.5V,3.8V,3.1V,2.5V VSS=5V Pulsed TJ=125°C,85°C,25°C,-40°C 1.2 1.0 VGS=2.5V VGS=4.5V VGS=3.8V VGS=3.1V TJ=25°C Pulsed Pulsed IS=3A In descending order TJ=125°C,85°C,25°C,-40°C Pulsed IS=2.3mATJ=125°C,85°C,25°C,-40°C Pulsed

Fig.9 - Maximum Forward Biased Safe Operating Area Source to Source Voltage, VSS (V) 0.01 0.1 10010 0.1 1000 Source Current, IS (A) CSP Enhancement Mode Power MOSFET Fig.7 - Capacitances Source to Source Voltage, VSS (V) Capacitance, C (pF) 0.1 1 10 4000 10000 2000 6000 8000 Comchip Technology CO., LTD. REV:A Page 4QW-JTR209 Typical Rating and Characteristic Curves (CMSBN12209-HF) Fig.8 - Gate Charge Gate Charge, QG (nC) Threshold Voltage, VTH (V) 0 20 8040 4.5 Pulsed VSS=10V Ciss Coss Crss Pulsed f=1kHz 100 RθJA=40℃/W TA=25℃ Single pulse RSS(on) Limited ISP 100µs 1ms 10ms 100ms DC BVSSS

CSP Enhancement Mode Power MOSFET Comchip Technology CO., LTD. REV:A Page 5QW-JTR209 Reel Taping Specification T C P P0 P1 d W E F A B o 120 DD1D2 Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) E F P P0 P1 T W W1 CSPC3028-14 SYMBOL (mm) (inch) A B C d D D1 D2 2.96 ± 0.05 13.00 + 0.35 2.165 ± 0.039 55.00 ± 1.00 CSPC3028-14 8.00 ± 0.15 0.315 ± 0.006 0.512 + 0.014 − 0.006 0.341 + 0.185 − 0.026 8.65 + 4.70 − 0.65

CSP Enhancement Mode Power MOSFET Comchip Technology CO., LTD. REV:A Page 6QW-JTR209 XXXXX = Control code 12209 12209 XXXXX Pin 1 Suggested P.C.B. PAD Layout SIZE (inch) 0.008 (mm) 0.20 0.406 1.075 0.016 0.042 A B C CSPC3028-14 0.0330.8375 1.525 0.25 0.060 0.010 D E F G H 0.0360.925 0.0080.206 A A B C D E F G H G G G G Product frame Case Type 5,000 REEL ( pcs ) Reel Size (inch) REEL PACK Standard Packaging CSPC3028-14