CMS85N12H8-HF COMCHIP | Alldatasheet

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  • Fast switching speed. - Low thermal resistance. Dimensions in inches and (millimeter) PDFN5x6-8L 0.165(4.20) 0.144(3.65) 0.051(1.30) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.197(5.00) 0.189(4.80) 0.244(6.20) 0.228(5.80) 0.014(0.35) 0.010(0.25) 0.050(1.27) TYP 1 2 3 4 8 7 6 5 0.230(5.85) 0.222(5.65) S S S G D D D D 0.205(5.20) 0.189(4.80) 0.150(3.80) 0.130(3.30) TYP 0.008(0.20) 0.030(0.75) 0.018(0.45) - Low gate charge. N-Channel CMS85N12H8-HF Mechanical data - Case: PDFN5x6-8L, molded plastic. - Mounting position: Any. - Terminals: Solderable per MIL-STD-750, method 2026. Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDS VGS Value IDM RθJC Thermal resistance junction to ambient (Note 3) RθJA Unit V V A A °C/W °C/WThermal resistance junction to case ID TJ, TSTG °C Power dissipation @TC=25°C PD W 120 ±20 100 400 119 0.58 Continuous drain current @TC=25°C Peak drain current, pulsed (Note 1) -55 to +150Operating junction and storage temperature range Single pulse avalanche energy (Note 2) EAS mJ326 Notes: 1. Pulse width ≤ 300µs, duty cycle ≤ 0.5%, Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 2. Limited by TJ(MAX), starting TJ=25°C. 3. Device mounted on FR-4 substrate PC board, 2oz copper, with 1 inch square copper plate in still air. Circuit Diagram D D D D S S S G -G: Gate -S: Source -D: Drain 1 2 3 4 8 7 6 5

Electrical Characteristics (at TA=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Drain-source breakdown voltage ID = 250µABVDSS Drain-source leakage current VDS = 120VIDSS RDS(on)Drain-source on-state resistance VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A Min MaxTyp Unit µA mΩ V = V , ID = 250µADS GSGate-source threshold voltage VGS(th) Gate leakage current VGS = ±20VIGSS nA Static Characteristics V V 120 ±100 2.41.4 Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time td(on) tr td(off) tf nsVGS = 10V, VDS = 60V, RG = 3Ω 3.5 5.5 5.8 7.1 Comchip Technology CO., LTD. REV:A Page 2 V ns Body-Diode Characteristics IS = 1A, VGS = 0V 1 43Reverse recovery time trr Drain-source diode forward voltage VSD nC355Reverse recovery charge Qrr IS = 20A, di/dt = 100A/µs Dynamic Characteristics Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = 40V, f = 1MHz 3295 1250 Total gate charge Gate to drain charge Gate to source charge Qg Qgs Qgd nC VDS = 60V, ID = 20A, VGS = 10V 5.5 QW-JTR244 SVDS = 5V, ID = 20A 83Forward transconductance gfs 1.85

Typical Rating and Characteristic Curves (CMS85N12H8-HF) MOSFET Comchip Technology CO., LTD. REV:A Page 3QW-JTR244 Drain Current, ID (A) Drain to Source Voltage, VDS (V) 1 5 100 Fig.1 - On-Region Characteristics Fig.2 - Transfer Characteristics Gate to Source Voltage, VGS (V) Drain Current, ID (A)Normalized On Resistance, RDS(ON) Fig.4 - On-Resistance vs. Junction Temperature 0 5025 75 175 1.8 On Resistance, RDS(ON) (mΩ) Fig.3 - On-Resistance vs. Drain Current Gate Temperature, (°C) On Resistance, RDS(ON) (mΩ) Fig.5 - On-Resistance vs. Gate-Source Voltage Gate to Source Voltage, VGS (V) Source Current, IS (A) Fig.6 - Body-Diode Characteristics 1.0E+01 Source to Drain Voltage, VSD (V) 2 3 4 100 Drain Current, ID (A) 0 5 10 3015 VDS=5V 25°C 125°C 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 125°C 25°C 102 64 8 25°C 125°C ID=20A 150125 1.6 1.4 1.2 1.0 0.8 VGS=2.5V VGS=3V VGS=3.5V VGS=4V,4.5V,6V,10V 20 25 VGS=10V VGS=4.5V 100 1 52 3 4 2.0 2.2 2.4 VGS=4.5V ID=20A VGS=10V ID=20A

Comchip Technology CO., LTD. REV:A Page 4QW-JTR244 Gate to Source Voltage, VGS (V) Gate Charge, Qg (nC) Fig.7 - Gate Charge Characteristics Fig.9 - Maximum Forward Biased Safe Operating Area Drain Current, ID (A) Drain-Source Voltage, VDS (V) 10 10000.01 1 0.01 0.1 Power, (W) Fig.10 - Single Pulse Power Rating Junction to Ambient 0.0001 0.01 0.1 500 Pulse Width, (s) 1 10010 200 100 Fig.8 - Capacitance Characteristics Drain-Source Voltage, VDS (V) Capacitance, C (pF) 0 20 40 60 4000 2000 5000 3000 1000 Ciss Coss Crss 0.1 1000 10 20 4030 50 VDS=60V ID=20A 0.001 300 400 TJ(Max)=150°C TC=25°C 100 100 RDS(ON) limited TJ(Max)=150°C TC=25°C DC 10µs 100µs 1ms 10ms Typical Rating and Characteristic Curves (CMS85N12H8-HF) 10 30 50

Comchip Technology CO., LTD. REV:A Page 5 Reel Taping Specification Trailer Device Leader Direction of Feed 200mm (min)160mm (min) SYMBOL (mm) (inch) A B C d D D1 D2 E 1.55 ± 0.05 331.00 ± 1.00 1.75 ± 0.10 0.061 ± 0.002 13.031 ± 0.039 0.069 ± 0.004 SYMBOL (mm) (inch) F P0 P1P T W W1 PDFN5x6 -8L 6.60 ± 0.10 0.260 ± 0.004 5.50 ± 0.10 0.217 ± 0.004 1.30 ± 0.05 0.051 ± 0.002 101.00 ± 2.00 3.976 ± 0.079 13.30 ± 0.20 0.524 ± 0.008 0.25 ± 0.05 0.010 ± 0.002 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 15.50 ± 3.00 0.610 ± 0.118 DD1D2 120° AP B C T W E F dP1 P0 PDFN5x6 -8L QW-JTR244

Comchip Technology CO., LTD. REV:A Page 6 Marking Code Part Number Marking Code CMS85N12H8-HF 70N12 Suggested P.C.B. PAD Layout SIZE (inch)(mm) PDFN5x6-8L A B C D E F H GA B C D E F G H I J K I J K L N M L NM O P O P 1.27 0.66 0.82 0.61 4.10 0.755 4.42 5.61 0.60 1.02 1.27 0.295 3.81 1.825 0.18 6.61 0.050 0.026 0.032 0.024 0.161 0.174 0.221 0.024 0.040 0.050 0.150 0.007 0.260 0.030 0.012 0.072 Standard Packaging Case Type REEL (pcs) Reel Size (inch) REEL PACK PDFN5x6-8L 5,000 70N12 Pin 1 XXXXXX xxxxxx = Control code QW-JTR244