CMS80N06-HF COMCHIP | Alldatasheet

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  • Super low gate charge. - Advanced high cell density trench technology. - Excellent Cdv/dt effect decline. - Green device available. Circuit Diagram Gate Source Drain Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDSS VGSS Value IDM RθJC Unit V V A A °C/WThermal resistance junction to case (Note 1) Operating junction temperature range Storage temperature range TJ TSTG Power dissipation (TC=25°C) PD W ±20 320 112 1.33 -55 to +175 -55 to +175 Continuous drain current (TC=100°C) (Note 1) ID 52 Pulsed drain current (Note 2) Single pulse avalanche energy (Note 3) EAS 130 mJ Continuous drain current (TC=25°C) (Note 1) ID 80 Thermal resistance junction to air (Note 1) RθJA °C/W52 Dimensions in inches and (millimeter) TO-220AB 0.188(4.77) 0.172(4.37) 0.058(1.47) 0.042(1.07) 1.135(28.83) 1.104(28.03) 0.102(2.60) 0.094(2.40) 0.019(0.48) 0.011(0.28) 0.406(10.30) 0.386(9.80) 0.358(9.10) 0.343(8.70) 0.112(2.84) 0.104(2.64) 0.541(13.74) 0.517(13.14) 0.157(4.00) 0.138(3.50) 0.052(1.32) 0.048(1.22) 0.104(2.64) 0.096(2.44) 0.036(0.91) 0.028(0.71) G D S 0.156(3.96) 0.148(3.76)

Comchip Technology CO., LTD. Page 2 REV:A Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = 250µAVDSS Zero gate voltage drain current VDS = 60V, VGS = 0VIDSS RDS(on)Static drain-source on-resistance (Note 2) VGS = 10V, ID = 30A Min MaxTyp Unit µA mΩ V V = V , ID = 250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = 20A, VGS = 0V, TJ = 25°C V V ±100 1.0Diode forward voltage (Note 2) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = 25V, f = 1MHz 4570 302 291 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = 30V, VGS = 10V, ID = 30A 18.2 Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time td(on) tr td(off) tf nsVDD = 30V, ID = 30A VGS = 10V, RG = 1.8Ω Switching Characteristics A80Source-drain current (body diode) ISD Notes: 1. The data tested by surface mounted on 1 inch² FR-4 board with 2oz cooper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=1mH. QW-JTR196

Rating and Characteristic Curves (CMS80N06-HF) MOSFET Comchip Technology CO., LTD. Page 3 Fig.4 - Body-Diode Characteristics Fig.3 - On-Resistance vs. Gate-Source Voltage Fig.5 - On-Resistance vs. Junction Temperature REV:A IF (A) 0.5 1.0 1.5 Gate-Source Voltage, VGS (V) 126 15 On-Resistance, RDS(ON) (mΩ) Source-Drain Voltage, VSD (V) 100 Junction Temperature, TJ (°C) 0 17510050-50 0.1 Fig.1 - On-Region Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 4 52 160 100 120 200 QW-JTR196 180 140 VGS= 4V VGS= 5V VGS= 6V VGS= 7V VGS= 8V,9V,12V,15V 175°C 25°C -55°C On-Resistance, RDS(ON) (mΩ) 12 1501257525-25-75 VGS= 10V ID= 40A Fig.2 - On-Resistance vs. ID 60 180 On-Resistance, RDS(ON) (mΩ) 1200 Drain Current, ID (A) 15030 90 VGS= 10V 175°C 25°C -55°C Fig.6 - Drain-Source vs. Junction Temperature Junction Temperature, TJ (°C) 100 0 17510050-50 BVDSS (V) 1501257525-25-75

Fig.8 - Gate Voltage vs. Junction Temperature Junction Temperature, TJ (°C) Gate Threshold Voltage, VGS(th) (V) 0.5 2.5 3.0 3.5 MOSFET Comchip Technology CO., LTD. Page 4 Fig.7 - Capacitance Characteristics Drain-Source Voltage, VDS (V) Capacitance, C (pF) 0 40 REV:A 1000 100 10000 QW-JTR196 Rating and Characteristic Curves (CMS80N06-HF) Fig.10 - Maximum Safe Operating Area 1000.1 101 Drain Current, ID (A) Drain-Source Voltage, VDS (V) 1000 100 0.1 Fig.9 - Gate-Charge Characteristics Total Gate Charge, QG (nC) 0 10050 Gate-Source Voltage, VGS (V) Coss Crss Ciss 2.0 1.5 1.0 0 17510050-50 1501257525-25-75 ID= 250µA TC=25°C Single pulse 100µs 10µs DC 10ms 100ms 1ms Limited by RDS(on)

Comchip Technology CO., LTD. Page 5 REV:A Part Number Marking Code Marking Code CMS80N06-HF 080N06H QW-JTR196 Standard Packaging Case Type TUBE (pcs) TUBE PACK TO-220AB G xxx 080N06H XXX = Control code