CMS71P03H8-HF COMCHIP | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
Features
- Super low gate charge. - Advanced high cell density trench technology. - Excellent Cdv/dt effect decline. Single pulse avalanche energy (Note 3) EAS 82 mJ Thermal Characteristics SymbolParameter Min Unit RθJC °C/WThermal resistance junction to case 2.4 Thermal resistance junction to air (Note 1) RθJA °C/W45 MaxTyp 2.1
Electrical Characteristics (at TA=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = -250µAVDSS Zero gate voltage drain current VDS = -24V, VGS = 0V, TC = 25°C IDSS RDS(on)Drain-source on-resistance (Note 2) VGS = -10V, ID = -20A VGS = -4.5V, ID = -15A Min MaxTyp Unit µA mΩ V ns Comchip Technology CO., LTD. Page 2 V = V , ID = -250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = -1A, VGS = 0V, TJ = 25°C V V -30 ±100 -2.5-1 -1.2 163Reverse Recovery time trr Diode forward voltage (Note 2) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = -15V, f = 1MHz 4665 502 441 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = -15V, VGS = -10V, ID = -20A REV:A Turn-on delay time (Note 4) Turn-off delay time (Note 4) Turn-on rise time (Note 4) Turn-off fall time (Note 4) td(on) tr td(off) tf nsVDD = -15V, VGS = -10V, RG = 3Ω, ID = -20A Switching Characteristics QW-JTR178 VDS = -24V, VGS = 0V, TC = 55°C -5 5.4 7.6 -1.5 6.6 ΩGate resistance RG VGS = 0V, f = 1MHz nC256Reverse recovery charge Qrr -0.7 ISD = -14A, VGS = 0V, dI/dt = 100A/µs Notes: 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 4. Guaranteed by design, not subject to production.
Rating and Characteristic Curves (CMS71P03H8-HF) MOSFET Comchip Technology CO., LTD. Page 3 Fig.2 - On-Resistance vs. Drain Current and Gate Voltage -800 -60 -40 Fig.4 -Body-Diode Characteristics Fig.1 - Typical Output Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 -1 -2 -3 -250 Fig.3 - VGS(th) vs. Junction Temperature Fig.5 - Normalized On-Resistance vs. Junction Temperature Fig.6 - Transfer Characteristics -20 -100 -200 -150 -100 -50 -80 REV:A 2.0 1.75 1.5 1.25 1.0 0.75 0.5 -4 -6 QW-JTR178 Drain Current, ID (A) Forward Voltage, VF (V) Forward Current, IF (A) 100 VGS= -2V VGS= -3V VGS= -4V VGS= -5V VGS= -6V VGS= -10V -8V On Resistance, RDS(ON) (mΩ) VGS= -4.5V VGS= -10V VGS= -5V VGS= -3.5V VGS= -3V TJ= 25°C Gate to Source Voltage, VGS (V) Junction Temperature, TJ (°C) 250-25 1501251007550 IDS=250µA VDS=10V 175°C 25°C Junction Temperature, TJ (°C) Normalized RDS(ON) 250-25-55 1751501251007550 ID= -20A VGS= -10V Gate-Source Voltage, VGS (V) Drain Current, ID (A) -250 -200 -150 -100 -50 TJ= -25°C TJ= 125°C TJ= 75°C TJ= 25°C
Comchip Technology CO., LTD. Page 4 Junction Temperature, TJ (°C) Fig.7 - Capacitance Characteristics 100 Fig.9 - Breakdown Voltage vs. Junction Temperature D-S Breakdown Voltage, BVDSS (V) REV:A 250-25 1501251007550 QW-JTR178 Rating and Characteristic Curves (CMS71P03H8-HF) Drain-Source Voltage, -VDS (V) Capacitance, C (pF) 1000 10000 5 10 15 3020 25 Fig.8 - Gate-Change Characteristics 900 706030 Ciss Coss Crss f=1MHz Fig.10 - Safe Operating Area 1001010.1 Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) 1000 100 Gate to Source Voltage, -VGS (V) QG (nC) 8050402010 VDS= -15V ID= -20A IDS=250µA VDS=0V TC=25°C δ=tp/T=0.01 tp=10µs 100µs 1ms 10ms 100ms
Comchip Technology CO., LTD. Page 5 REV:A QW-JTR178 Reel Taping Specification Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) A B C d D D1 D2 E 1.55 + 0.01 330 ± 1.00 1.75 ± 0.10 0.061 + 0.0004 12.992 ± 0.039 0.069 ± 0.004 SYMBOL (mm) (inch) F P0 P1P W W1 PDFN5x6 -8L 6.30 ± 0.10 0.248 ± 0.004 5.30 ± 0.10 0.209 ± 0.004 1.20 ± 0.10 0.047 ± 0.004 100 ± 1.00 3.937 ± 0.039 13.00 ± 0.20 0.512 ± 0.008 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 17.80 ± 0.30 0.701 ± 0.012 DD1D2 120° PDFN5x6 -8L AP B C W E F dP1 P0 T T 0.25 ± 0.03 0.010 ± 0.001
Comchip Technology CO., LTD. Page 6 REV:A QW-JTR178 Part Number Marking Code Marking Code Standard Packaging Case Type 5,000 REEL (pcs) Reel Size (inch) REEL PACK PDFN5x6-8L CMS71P03H8-HF 060P03 060P03 XXX XXX = Control code Pin 1 G Suggested P.C.B. PAD Layout SIZE (inch) 0.031 (mm) 0.80 1.00 1.27 0.039 0.050 A B C PDFN5x6-8L 0.47 0.019D 0.0310.80 0.85 4.50 0.033 0.177 E F G 4.61 0.181H 6.40 0.252I A B C DE F G H I