CMS65P10D2-HF COMCHIP | Alldatasheet

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  • Low on resistance. - Fast switching characteristic. REV:A Page 1QW-JTR234 CMS65P10D2-HF - Low gate charge. Circuit Diagram Mechanical data - Case: TO-263, molded plastic. - Mounting position: Any. - Terminal: Solderable per MIL-STD-750, method 2026. Maximum Ratings (at TA=25°C unless otherwise noted) Gate-source voltage Unit SymbolParameter VDS VGS ID V V A Continuous drain current (Note 1) VGS = -10V, TC = 25°C Limits -100Drain-source voltage ±20 -65 -16 Pulsed drain current (Note 3) IDM A PD W Total power dissipation (Note 1) -260 -60 180 TJ, TSTG °COperating junction and storage temperature range -55 to +150 VGS = -10V, TA = 25°C VGS = -10V, TA = 70°C -13 IAS Continuous body diode forward current @ TC = 25°C (Note 1) -65 TC = 100°C TA = 70°C TA = 25°C 125 A Avalanche current @ L=0.1mH EAS mJ TC = 25°C IS Continuous drain current (Note 2) VGS = -10V, TC = 100°C -41 Total power dissipation (Note 2) Avalanche energy @ L=0.5mH A 7.8 G S D- G: Gate - S: Source - D: Drain Dimensions in inches and (millimeters) TO-263 0.196(4.98) 0.350(8.90) 0.335(8.50) 0.406(10.31) 0.394(10.01) 0.184(4.67) 0.185(4.70) 0.056(1.42) 0.044(1.12) 0.215(5.45) 0.195(4.95) 0.204(5.18) 0.610(15.50) 0.588(14.94) 0.067(1.70) 0.051(1.30) 0.054(1.37) 0.046(1.17) 0.021(0.530) 0.015(0.381) 0.271(6.88) 0.231(5.88) 0.337(8.562) 0.000(0.00) 0.100(2.54) Typ. 0.036(0.91) 0.028(0.71) 0.054(1.37) 0.046(1.17) 0.108(2.74) 0.092(2.34) G D S

Comchip Technology CO., LTD. Page 2 2. Independent of operating temperature. REV:A Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Min MaxTyp Drain-source breakdown voltage BVDSS Gate threshold voltage VGS(th) Drain-source leakage current IDSS Gate-source leakage current IGSS RDS(on) Static drain-source on-resistance Forward transconductance gfs Turn-on delay time (Note 1, 2) Turn-off delay time (Note 1, 2) Rise time (Note 1, 2) Fall time (Note 1, 2) td(on) tr td(off) tf Total gate charge (Note 1, 2) Gate-drain charge (Note 1, 2) Gate-source charge (Note 1, 2) Qg Qgs Qgd Diode forward voltage (Note 1) VSD Unit V nA µA mΩ S nS nC V nS V nC trr Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pF Dynamic Qrr Static Rg Source-drain diode Reverse recovery time Reverse recovery charge Gate resistance VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = -10V, ID = -15A VGS = ±20V, VDS = 0V VDS = -80V, VGS = 0V VGS = -10V, ID = -15A Ω VDS = -30V, VGS = 0V, f = 1MHz f = 1MHz VDS = -50V, ID = -15A, VGS = -10V VDS = -50V, ID = -15A, VGS = -10V RGS = 1Ω IS = -15A, VGS = 0V IF = -15A, dIF/dt = 100A/µs VR =30V -100 -1 -2.5 ±100 1512 10103 593 161 2.9 176 169 -0.75 -1.2 Notes: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%. mΩRDS(on) VGS = -4.5V, ID = -10A 1814 Total gate charge (Note 1, 2) Qg VDS = -50V, ID = -15A, VGS = -4.5V QW-JTR234 Thermal Data Unit Parameter Steady state °C/W °C/W Thermal resistance, junction to case Thermal resistance, junction to ambient (Note 2) Symbol RθJC RθJA Notes: 1. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for case where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temp erature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Rating are based on low frequency and low duty cycles to keep initial TJ=25°C.

Typical Rating and Characteristic Curves (CMS65P10D2-HF) MOSFET Fig.2 - Breakdown Voltage vs Ambient Temperature Junction Temperature, TJ (°C) Normalized Drain-Source Breakdown Voltage, -BVDSS Fig.4 - Body Diode Current vs Source-Drain Voltage Body Diode Current, -IS (A) Source-Drain Voltage, -VSD (V) Fig.6 - Drain-Source On-State Resistance vs Junction Temperature Fig.1 - Typical Output Characteristics Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) Fig.3 - Static Drain-Source On-State Resistance vs Drain Current Drain Current, -ID (A) Static Drain-Source On-State Resistance, RDS(ON) (mΩ) Gate-Source Voltage, -VGS (V) 75-75 0 0.8 0.9 1.0 0.2 0.6 -75 17525 0.5 1.5 2.5 -50 1.2 1.0 -25 Fig.5 - Static Drain-Source On-State Resistance vs Gate-Source Voltage 1.1 0 2 4 8 10 180 Comchip Technology CO., LTD. Page 3 6 -25 25 50 100 125 150 0 0 0.4 0.8 Static Drain-Source On-State Resistance, RDS(ON) (mΩ) 0 2 4 8 106 Junction Temperature, TJ (°C) Normalized Static Drain-Source On-State Resistance, RDS(ON) 0-50 7550 125100 150 2.0 1.0 REV:A 175 140 160 5 10 2015 QW-JTR234 120 100 5 10 2015 VGS=-3.5V VGS=-4V VGS=-5V VGS=-10V,-9V,-8V,-7V,-6V VGS= -10V VGS= -4.5V ID= -15A ID= -250µA VGS=0V TJ=25°C TJ=150°C VGS= -10V, ID= -15A RDS(ON) @TJ=25°C:12 mΩ typ.

Fig.8 - Threshold Voltage vs Junction Temperature Junction Temperature, TJ (°C) Normalized Threshold Voltage, -VGS(th) Fig.10 - Gate Charge Characteristics Total Gate Charge, Qg (nC) Gate-Source Voltage, -VGS (V) Fig.12 - Maximum Drain Current vs Junction Temperature Fig.7 - Capacitance vs Drain-to-Source Voltage Drain-Source Voltage, -VDS (V) Capacitance, (pF) Fig.9 - Forward Transfer Admittance vs Drain Current Drain Current, -ID (A) Forward Transfer Admittance, GFS (S) Drain-Source Voltage, -VDS (V) 17575-75 0 0.4 0.6 1.0 17525 -50 1.4 0.01 0.1 Fig.11 - Maximum Safe Operating Area 1.2 100 Comchip Technology CO., LTD. Page 4 -25 25 50 100 125 150 0.001 0.01 0.1 1001 0 0.01 1 10 100 0.1 Junction Temperature, TJ (°C) 7550 125100 150 100000 0.8 Drain Current, -ID (A) Maximum Drain Current, -ID (A) REV:A 0.01 0.1 100 100 50 100 200150 3010 QW-JTR234 Typical Rating and Characteristic Curves (CMS65P10D2-HF) 1000 10000 Crss Coss Ciss VDS= -10V TA=25°C Pulsed TA=25°C, TJ=150°C VGS= -10V, RθJA=16°C/W single pulse 100µs 1ms 10ms 100ms 10s DC 100s RDS(ON) Limited ID= -1mA ID= -250µA VDS= -50V ID= -15A VGS= -10V, RθJA=16°C/W

Fig.13 - Single Pulse Power Rating, Junction to Ambient Pulse Width, (s) Power, (W) 0.0001 0.001 0.01 1500 500 Comchip Technology CO., LTD. Page 5 0.1 1 100 1000 2000 REV:A QW-JTR234 Typical Rating and Characteristic Curves (CMS65P10D2-HF) TJ(MAX)=150°C, TA=25°C RθJA=16°C/W

Comchip Technology CO., LTD. Page 6 REV:A QW-JTR234 Trailer Device Leader Direction of Feed 200mm (min)160mm (min) SYMBOL (mm) (inch) E F P P0 P1 T W W1 TO-263 SYMBOL (mm) (inch) A B C d D D1 D2 − 2.00 − 0.079 0.512 ± 0.008 − 0.004 − 0.10 30.40 + 0.00 − 0.40 3.937 ± 0.020 100.00 ± 0.50 1.197 + 0.000 − 0.016 TO-263 Reel Taping Specification DD1D2 120° B AP dP0 P1 W F E T C

Comchip Technology CO., LTD. Page 7 REV:A QW-JTR234 Marking Code Part Number Marking Code CMS65P10D2-HF B015P10 XXXX = Control code Standard Packaging Case Type TO-263 REEL (pcs) Reel Size (inch) 13800 REEL PACK B015 P10 XXXX Suggested P.C.B. PAD Layout SIZE (inch)(mm) TO-263 A B C D E F A B C D E F E 10.50 10.50 4.00 1.20 2.54 2.00 0.413 0.413 0.157 0.047 0.100 0.079