CMS52N04V8-HF COMCHIP | Alldatasheet

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  • Low thermal resistance. - Advanced high cell density trench technology. Maximum Ratings (at TC=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDSS VGSS Value IDM RθJC Unit V V A A °C/WThermal resistance junction to case (Note 1) Operating junction temperature range Storage temperature range TJ TSTG Power dissipation (TC=25°C) PD W ±20 144 20.8 -55 to +150 -55 to +150 Continuous drain current (VGS=10V, TC=100°C) (Note 1) ID 33 Pulsed drain current (VGS=10V, TC=25°C) (Note 1,2,3) Single pulse avalanche energy (VDD = 40V, L = 1mH) EAS 91 mJ Continuous drain current (VGS=10V, TC=25°C) (Note 1) ID 52 Thermal resistance junction to air (Note 1) RθJA °C/W62.5

Comchip Technology CO., LTD. Page 2 REV:A Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = 250µAVDSS Zero gate voltage drain current VDS = 32V, VGS = 0VIDSS RDS(on) Static drain-source on-resistance (Note 2) VGS = 10V, ID = 15A Min MaxTyp Unit µA mΩ V V = V , ID = 250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics (Note 4) Source-Drain Diode Characteristics ISD = 15A, VGS = 0V V V ±100 4.6 1.3Diode forward voltage (Note 2) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = 20V, f = 1MHz 916 348 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = 20V, VGS = 10V, ID = 15A 3.7 4.7 Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time td(on) tr td(off) tf nsVDD = 20V, VGS = 10V RG = 3.9Ω, RL = 1.33Ω, ID = 15A 5.7 Switching Characteristics (Note 4) RDS(on) mΩ7VGS = 4.5V, ID = 10A A52Drain continuous forward current IS ns ISD = 15A, di/dt = 100A/µs Reverse recovery time trr nC7.2Reverse recovery change Qrr TC = 25°C Notes: 1. Surface mounted on 1 in² pad area, t ≤ 10 sec. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. 3. Limited by bonding wire. QW-JTR189

Rating and Characteristic Curves (CMS52N04V8-HF) MOSFET Comchip Technology CO., LTD. Page 3 Fig.4 - Body-Diode Characteristics Fig.1 - Typical Output Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 0.8 1.00.4 Fig.3 - On-Resistance vs. Gate-Source Voltage Fig.5 - On-Resistance vs. Junction Temperature Fig.6 - VGS(th) vs. Junction Temperature REV:A Source Current, IS (A) Fig.2 - On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance, RDS(ON) Gate-Source Voltage, VGS (V) 84 10 On-Resistance, RDS(ON) (mΩ) Junction Temperature, TJ (°C) Source-Drain Voltage, VSD (V) 0.1 0.60.2 1.0 TJ=25°C 0 15010050-50 Normalized Threshold Voltage, VGS(th) 0.6 1.2 1.8 VGS= 3V VGS= 2V VGS= 5V,6V,7V,8V,9V,10V VGS= 4V Drain Current, ID (A) 40302010 On-Resistance, RDS(ON) (mΩ) VGS= 4.5V VGS= 10V 2 95 73 IDS= 15A TJ=150°C 25 12575-25 0.4 1.0 1.6 0.2 0.8 1.4 ID= 250µA Junction Temperature, TJ (°C) 0.6 1.2 2.0 0.4 1.0 1.6 0.2 0.8 1.4 1.8 0 15010050-50 25 12575-25 VGS= 10V IDS= 15A RON@TJ=25°C:4.1mΩ QW-JTR189

Comchip Technology CO., LTD. Page 4 Fig.7 - Capacitance Characteristics Drain-Source Voltage, VDS (V) Capacitance, C (pF) 0 10 20 1600 REV:A 1400 1200 30 40 Rating and Characteristic Curves (CMS52N04V8-HF) Fig.10 - Power CapabilityFig.9 - Current Capability Fig.11 - Gate-Charge Characteristics Power, Ptot (W) Gate Charge, QG (nC) 0 211263 159 Drain Current, ID (A) Junction Temperature, TJ (°C) 1751005025 125750 150 TC= 25°C, VGS= 10V Gate-Source Voltage, VGS (V) Junction Temperature, TJ (°C) VDS= 20V IDS= 15A 1751005025 125750 150 TC= 25°C, VGS= 10V 1000 800 600 400 200 Fig.8 - Maximum Safe Operating Area 1000.1 101 300 Drain Current, ID (A) Drain-Source Voltage, VDS (V) 200 100 0.1 5 15 25 35 Coss Ciss Crss f=1MHz 0.01 100µs 1ms DC 300µs 10ms 100ms TC=25°C RDS(ON )Limit QW-JTR189

Comchip Technology CO., LTD. Page 5 REV:A Reel Taping Specification Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) A B C d D D1 D2 E 1.50 + 0.10 − 0.00 330 ± 1.00 1.75 ± 0.10 0.059 + 0.004 − 0.000 12.992 ± 0.039 0.069 ± 0.004 SYMBOL (mm) (inch) F P0 P1P W W1 PDFN3x3 -8L 3.60 ± 0.10 0.142 ± 0.004 3.60 ± 0.10 0.142 ± 0.004 1.20 ± 0.10 0.047 ± 0.004 100 ± 1.00 3.937 ± 0.039 13.00 ± 0.20 0.512 ± 0.008 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 17.80 ± 0.30 0.701 ± 0.012 DD1D2 120° T 0.25 ± 0.02 0.010 ± 0.001 A B C d E F P0P1 P W T PDFN3x3 -8L QW-JTR189

Comchip Technology CO., LTD. Page 6 REV:A Part Number Marking Code Marking Code Standard Packaging Case Type 5,000 REEL (pcs) Reel Size (inch) REEL PACK PDFN3x3-8L CMS52N04V8-HF 046N04T 046N04T Suggested P.C.B. PAD Layout SIZE (inch) 0.017 (mm) 0.42 0.70 0.65 0.028 0.026 A B C PDFN3x3-8L 2.25 0.089D 0.0932.37 0.42 0.23 0.017 0.009 E F G 1.85 0.073H A B C D E F G H I 3.70 0.146I Pin 1 xxx XXX = Control code G QW-JTR189