CMS50N10D-HF COMCHIP | Alldatasheet

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  • Low on resistance. - Low gate charge. - Fast switching characteristic. Dimensions in inches and (millimeters) D-PAK(TO-252) 0.215(5.46) 0.201(5.10) 0.264(6.70) 0.256(6.50) G D S 0.094(2.386) 0.086(2.186) 0.406(10.31) 0.382(9.71) 0.244(6.20) 0.236(6.00) 0.114(2.90) REF 0.063(1.60) REF 0.030(0.77) 0.025(0.635) 0.039(1.00) 0.024(0.60) 0.005(0.127) 0.000(0.00) 0.067(1.70) 0.055(1.40) 0.190(4.83) REF 0.207(5.25) REF 0.023(0.58) 0.018(0.46) 0.094(2.40) 0.087(2.20) 0.000(0.00) 0.012(0.30) Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage UnitsSymbolParameter VDS VGS ID Value V V A Pulsed drain current (Note 3) IDM A Continuous drain current @VGS=10V (Note 1) TC = 25°C TC = 100°C PD RθJA TJ, TSTG W °C/W Thermal resistance from junction to ambient (Note 2) Total power dissipation (Note 1) RθJC °C/W Thermal resistance from junction to case TC = 25°C TC = 100°C Avalanche energy @ L=0.5mH EAS mJ IAS A Avalanche current @ L=0.1mH Continuous body diode forward current @ TC = 25°C (Note 1) TA = 25°C TA = 70°C TA = 25°C TA = 70°C IS Operating junction and storage temperature range Continuous drain current @VGS=10V (Note 2) Total power dissipation (Note 2) A 100 ±20 5.6 176 125 3.3 2.1 -55 to +150 Circuit Diagram G : GATE S : SOURCE D : DRAIN G D S

SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = 250µA Zero gate voltage drain current Forward transconductance Reverse transfer capacitance Input capacitance VDS = 80V, VGS = 0V VDS = 10V, ID = 10A BVDSS IDSS RDS(on) gFS Coss Crss V µA Gate-body leakage current IGSS nA S pF Ciss VGS = 10V, ID = 10A Gate threshold voltage VDS = VGS, ID = 250µAVGS(th) V Output capacitance Typ Static Electrical Characteristics (at TA=25°C unless otherwise noted) Dynamic VGS = 5V, ID = 8A mΩDrain-source on-state resistance Qgs Qgd nC Qg VDS = 50V, VGS = 0V, f = 1MHz VDS = 50V, ID = 10A, VGS = 10V MOSFET Gate-source charge (Note 4, 5) Gate-drain charge (Note 4, 5) VGS = ±20V, VDS = 0V Page 2QW-JTR44 Comchip Technology CO., LTD. REV:C Diode forward voltage (Note 4) IS = I0A, VGS = 0VVSD Source-Drain Diode V Gate resistance f = 1MHzRg Turn-on delay time (Note 4, 5) Turn-off delay time (Note 4, 5) Rise time (Note 4, 5) Fall time (Note 4, 5) td(on) tr td(off) tf ns ns nC trr Qrr 100 2.5 ±100 1900 146 0.8 4.7 0.8 1.2 VDS = 50V, ID = 1A, VGS = 10V, RGS = 6Ω IF = 10A, dIF/dt = 100A/µs Reverse recovery time Reverse recovery change Total gate charge (Note 4, 5) Notes: 1. The power dissipation PD is based on TJ(MAX)=150°C, using junction to case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. Pulse width ≤ 300µs, duty cycle ≤ 2%. 5. Independent of operating temperature. Ω

Typical Rating and Characteristic Curves (CMS50N10D-HF) MOSFET Page 3QW-JTR44 Comchip Technology CO., LTD. REV:C Fig.1 - Typical Output Characteristics Drain Source Voltage, VDS (V) Drain Current, ID (A) 100 120 140 2 4 6 8 10 VGS=2.5V VGS=3V VGS=3.5V VGS=10V,9V,8V,7V,6V,5V,4.5V,4V Fig.3 - Static Drain Source On-State Resistance vs Drain Current Drain Current, ID (A) 5 10 20 25 30 Fig.5 - Static Drain Source On-State Resistance vs Gate Source Voltage Gate Source Voltage, VGS (V) Static Drain Source On-State Resistance, RDS(on) (mΩ) 2 4 6 8 10 Static Drain Source On-State Resistance, RDS(on) (mΩ) VGS=5V VGS=10V ID=10A Fig.2 - Breakdown Voltage vs Ambient Temperature Junction Temperature, TJ (°C) -75 0.9 0.8 1.0 1.1 1.2 0 50 75 125 175100 15025-50 -25 ID=250µA VGS=0V Fig.4 - Body Diode Current vs Source Drain Voltage 0.4 0.2 1.0 0.8 1.2 0 5 10 20 3015 25 Fig.6 - Drain Source On-State Resistance vs Junction Temperature Junction Temperature, TJ (°C) Normalized Static Drain Source On-State Resistance, RDS(on) -75 1.5 1.0 2.0 2.5 0 50 75 125 175100 15025-50 -25 0.6 TJ=25°C TJ=150°C VGS=10V, ID=10A RDS(on)@TJ=25°C:19mΩ typ. 0.5 Normalized Drain Source Breakdown, BVDSSSource Drain Voltage, VSD (V) Body Diode Current, IS (A)

Comchip Technology CO., LTD. REV:C Typical Rating and Characteristic Curves (CMS50N10D-HF) Fig.7 - Capacitance vs Drain to Source Voltage Drain Source Voltage, VDS (V) Capacitance, C (pF) 100 1000 10000 10 20 30 40 50 Fig.9 - Forward Transfer Admittance vs Drain Current Drain Current, ID (A) 0.1 0.01 100 0.001 0.01 1 10 100 Fig.11 - Maximum Safe Operating Area 0.1 Forward Transfer Admittance, GFS (S) Ciss Coss Crss VDS=5V VDS=10V TA=25°C Pulsed 0.1 0.01 100 Drain Current, ID (A) Drain Source Voltage, VDS (V) 0.01 1 100.1 100 RDSON Limited TA=25°C, TJ=150°C VGS=10V, RθJA=38°C/W Single pulse DC 10s 100ms 10ms 1ms 100µs Fig.8 - Threshold Voltage vs Junction Temperature Junction Temperature, TJ (°C) -75 0.6 0.4 1.0 1.4 0 50 75 125 175100 15025-50 -25 Fig.10 - Gate Charge Characteristics 0 5 10 20 5015 25 Fig.12 - Maximum Drain Current vs Junction Temperature Junction Temperature, TJ (°C) 50 75 125 175100 15025 1.2 0.8 ID=1mA ID=250µA 30 35 4540 VDS=50V ID=10A Maximum Drain Current, ID (A) VGS=10V RθJA=38°C/W Normalized Threshold Voltage, VGS(th)Gate Source Voltage, VGS (V) Total Gate Charge, Qg (nC)

Comchip Technology CO., LTD. REV:C Typical Rating and Characteristic Curves (CMS50N10D-HF) Fig.13 - Single Power Rating, Junction to Ambient Pulse Width, (s) Power, (W) 1000 4000 5000 0.001 0.01 1 100.10.0001 3000 2000 TJ(MAX)=150°C TA=25°C RθJA=38°C/W

(mm) SYMBOL (mm) 6.90 ± 0.10 10.50 ± 0.10 8.00 ± 0.10 1.55 ± 0.05 330 ± 2.00 A TO-252 (DPAK) TO-252 (DPAK) Reel Taping Specification D1 D2 D Trailer Device Leader 400mm (min)160mm (min) Direction of Feed Page 6QW-JTR44 Comchip Technology CO., LTD. REV:C C d E F B W P A

2510 . Standard Packaging REEL PACK Case Type REEL Reel Size ( pcs ) (inch) TO-252 / DPAK 2,500 13 CMS50N10D-HF MOSFET Suggested P.C.B. PAD Layout C B D A E F SIZE (inch) 0.243 (mm) 6.17 1.60 5.80 0.063 0.228 TO-252/DPAK 6.20 0.244 A B C D 3.00 0.118E 2.58 0.102F Page 7QW-JTR44 Comchip Technology CO., LTD. REV:C XXXX = Control code 2510 .XXXX