CMS38P03H8-HF

CMS38P03H8-HF COMCHIP | Alldatasheet

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Technical content

Features

• Super low gate charge. - Excellent Cdv/dt effect decline. - Advanced high cell density technology. - 100% EAS guaranteed. Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDSS VGSS Value IDM RθJAThermal resistance junction to air (Note 4) RθJC Unit V V A A °C/W °C/W Thermal resistance junction to case (Note 4) ID Operating junction temperature range Storage temperature range TJ TSTG Power dissipation (TC=25°C) PD W -30 ±20 -38 -88 -55 to +150 -55 to +150 Continuous drain current (TC=25°C, VGS=-10V) Continuous drain current (TC=100°C, VGS=-10V ) ID -22 Pulsed drain current (Note 1) Avalanche energy, single pulsed (Note 2) EAS 15 mJ Top Bottom 2.5

Electrical Characteristics (at TJ=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = -250µAVDSS Zero gate voltage drain current VDS = -30V, VGS = 0V, TJ = 25°C IDSS RDS(on) Static drain-source on-resistance (Note 3) VGS = -10V, ID = -10A Min MaxTyp Unit µA mΩ V Comchip Technology CO., LTD. Page 2 V = V , ID = -250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = -10A, VGS = 0V V V -30 ±100 -2.5-1 -1.2Diode forward voltage VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = -15V, f = 1MHz 1588 186 152 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVGS = -10V, VDD = -15V, ID = -10A 3.2 6.0 REV:A Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time td(on) tr td(off) tf nsVGS = -10V, VDD = -15V, ID = -10A RG = 3Ω 8.2 18.6 31.8 18.4 Switching Characteristics RDS(on) mΩ32 Notes: 2. Limited by TJ max, starting TJ=25°C, L=0.5mH, RG=25Ω, VDS=-10V, VGS=-10V. 3. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 4. Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thich) copper area for drain connection. PCB is vertical in still air. VGS = -4.5V, ID = -6A A-36Source drain current (body diode) ISD VDS = -30V, VGS = 0V, TJ = 125°C -100 -1.4 -0.88 TA = 25°C 1. Repetitive rating; pulse width limited by max. junction temperature. QW-JTR182

Rating and Characteristic Curves (CMS38P03H8-HF) MOSFET Comchip Technology CO., LTD. Page 3 Fig.4 - Body-Diode Characteristics Fig.1 - On-Region Characteristics Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) 0 2 41 5 Fig.3 - On-Resistance vs. Gate-Source Voltage Fig.5 - On-Resistance vs. Junction Temperature Fig.6 - Drain Source vs. Junction Temperature REV:A Source Current, IS (µA) Fig.2 - On-Resistance vs. Drain Current and Gate Voltage Drain Current, -ID (A) On-Resistance, RDS(ON) (mΩ) 4 108 0.2 0.4 0.6 10.8 Gate-Source Voltage, -VGS (V) 74 6 108 100 On-Resistance, RDS(ON) (mΩ) 12525 1007550 150 Junction Temperature, TJ (°C) 5 9 -BVDSS, (V) Source-Drain Voltage, -VSD (V) 1.00E+00 VGS= -3V VGS= -3.5V, -4.5V, -10V 2 6 VGS= -10V VGS= -4.5V 100°C 150°C 125°C 75°C 25°C ID= -10A Junction Temperature, TJ (°C) On-Resistance, RDS(ON) (mΩ) 12525 1007550 150 ID= -10A VGS= -10V ID= -250µA 1.00E+01 1.00E+02 1.00E+03 1.00E+04 1.00E+05 1.00E+06 1.00E+07 25°C 75°C 100°C 125°C 150°C QW-JTR182

Comchip Technology CO., LTD. Page 4 Fig.10 - Gate Charge Characteristics Fig.7 - Capacitance Characteristics Drain-Source Voltage, -VDS (V) C,(pF) 0 10 255 30 2400 Fig.9 - Transfer Characteristics 1.5 1600 1200 800 REV:A 1.6 0.8 400 Fig.8 - Gate Voltage vs. Junction Temperature 0.4 1.0 5 10 15 3020 Gate-Source Voltage, -VGS (V) 2 3 1.2 0.6 0.2 1.4 2.5 Qg, (nC) -10 2000 Ciss Coss Crss f=1MHz Gate Threshold Voltage, -VGS(TH) (V) Junction Temperature, TJ (°C) 12525 1007550 150 ID= -250µA Drain Current, -ID (A) Gate-Source Voltage, VGS (V) 150°C 25°C VDS= -10V QW-JTR182 Rating and Characteristic Curves (CMS38P03H8-HF)

Comchip Technology CO., LTD. Page 5 REV:A Reel Taping Specification Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) A B C d D D1 D2 E 1.55 + 0.01 330 ± 1.00 1.75 ± 0.10 0.061 + 0.0004 12.992 ± 0.039 0.069 ± 0.004 SYMBOL (mm) (inch) F P0 P1P W W1 PDFN5x6 -8L 6.30 ± 0.10 0.248 ± 0.004 5.30 ± 0.10 0.209 ± 0.004 1.20 ± 0.10 0.047 ± 0.004 100 ± 1.00 3.937 ± 0.039 13.00 ± 0.20 0.512 ± 0.008 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 17.80 ± 0.30 0.701 ± 0.012 DD1D2 120° PDFN5x6 -8L AP B C W E F dP1 P0 T T 0.25 ± 0.03 0.010 ± 0.001 QW-JTR182

Comchip Technology CO., LTD. Page 6 REV:A Part Number Marking Code Marking Code Standard Packaging Case Type 5,000 REEL (pcs) Reel Size (inch) REEL PACK PDFN5x6-8L CMS38P03H8-HF 200P03T Suggested P.C.B. PAD Layout SIZE (inch) 0.031 (mm) 0.80 1.00 1.27 0.039 0.050 A B C PDFN5x6-8L 0.47 0.019D 0.0310.80 0.85 4.50 0.033 0.177 E F G 4.60 0.181H A B C D E F G H QW-JTR182 200P03T XXX XXX = Control code Pin 1 G