CMS3407-HF COMCHIP | Alldatasheet
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Technical content
Features
- High power and current handling capability. - Surface mount package. Mechanical data - Case: SOT-23, molded plastic. - Mounting position: Any. Circuit Diagram G D S G : Gate S : Source D : Drain Drain-source voltage Unit SymbolParameter VDS Value -30 V Maximum Ratings (at Ta=25°C unless otherwise noted) Gate-source voltage VGS ±20 V Drain current-continuous Drain current-pulsed (Note 1) IDM -20 A Operating junction and storage temperature range RθJA TJ, TSTG 1.4 -55 to +150 W °C/W Thermal resistance junction to ambient (Note 2) PDPower dissipation 2. Surface mounted on FR4 board, t ≤ 10 sec. Notes: 1. Pulse width limited by maximum junction temperature. ID -4.1 A QW-JTR117 Page 1 REV:B
Electrical Characteristics (at Ta=25°C unless otherwise noted) SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = -250µABVDSS -30 V Typ Off characteristics Zero gate voltage drain current VDS = -24V, VGS = 0VIDSS -1 Gate-body leakage current VGS = ±20V, VDS = 0VIGSS ±100 µA RDS(ON) VGS = -10V, ID = -4.1A mΩ Drain-source on-state resistance
10 SForward transconductance VDS = -5V, ID = -1AgFS
VGS = -4.5V, ID = -4A 9560 Gate threshold voltage VDS = VGS, ID = -250µAVGS(th) -1.1 V-2.1-1.5 Reverse transfer capacitance Input capacitance Coss Crss pF 650 Output capacitance 105 Dynamic characteristics (Note 2) VDS = -15V, VGS = 0V, f = 1MHz Ciss nC Qg 12.5 VDS = -15V, ID = -4A, VGS = -10V Total gate charge Switching characteristics (Note 2) Turn-on delay time VDD = -15V, RL = 3.6Ω VGS = -10V, RGEN = 3Ω td(on) 4.5 ns Turn-off delay time td(off) tf 12.5 2.8 nA 2. Guaranteed by design, not subject to production. Notes: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%. On characteristics (Note 1) -1.2 VDiode forward voltage (Note 1) VGS = 0V, IS = -4.1A VSD Turn-on rise time tr Turn-off fall time Drain-source diode characteristics Gate-source charge Gate-drain charge Qgs Qgd -33 8.5 2.7 Comchip Technology CO., LTD. QW-JTR117 Page 2 REV:B
0.5 0 30 Fig.1 - Power Dissipation Junction Temperature, TJ (°C) Power , PD (W) 0 20 40 60 80 Fig.2 - Drain Current Drain Current, -ID (A) 60 90 120 1.0 2.0 140 0 21 Fig.3 - Output Characteristics 0 105 2 4 6 8 Normalized On-Resistance Fig.4 - Drain-Source on Resistance Rating and Characteristic Curves (CMS3407-HF) MOSFET Fig.5 - Transfer Characteristics 0.8 1.0 1.2 1.4 Fig.6 - Drain-Source on Resistance 1.6 0 0 50 75 100 175 Junction Temperature, TJ (°C) Drain-Source Voltage, -VDS (V) 25 125 150 1.5 100 1.2 2.4 4.8 3.6 41 2 3 Junction Temperature, TJ (°C) 120 On-Resistance, RDS(ON) (mΩ) Drain Current, -ID (A) 100 Drain Current, -ID (A) -10V -5V -4.5V -3.5V -4V VGS= -3V Gate-Source Voltage, -VGS (V) Drain Current, -ID (A) 25°C 125°C VDS= -5V 150 VGS= -4.5V VGS= -10V ID= -4.1A VGS= -4.5V VGS= -10V Comchip Technology CO., LTD. QW-JTR117 Page 3 REV:B
0.1 Drain-Source Voltage, -VDS (V) Rating and Characteristic Curves (CMS3407-HF) 2 4 Fig.7 - RDS(ON) vs VGS 0 5 10 15 20 Fig.8 - Capacitance vs VDS 6 8 3010 25 200 400 1000 600 Gate Charge, Qg (nC) On-Resistance, RDS(ON) (mΩ) Gate-Source Voltage, -VGS (V) 100 120 140 160 25°C 125°C ID= -4A 0 84 Fig.9 - Gate Charge Fig.10 - Source-Drain Diode Forward 1E+01 1E-06 1E-05 1E-04 1E-03 Gate-Source Voltage, -VGS (V) VDS= -15V ID= -4A Drain-Source Voltage, -VDS (V) Capacitance, (pF) 800 Coss Ciss Crss 1.0 Reverse Drain Current, IS (A) Source-Drain Voltage, -VSD (V) 1E+00 1E-02 1E-01 Fig.11 - Safe Operation Area 0.1 1001 10 Drain Current, -ID (A) 100 RDS(ON) limited TJ(max)=150°C TA=25°C DC 10µs 100µs 10s 10ms 1ms 0.1s 25°C 125°C Comchip Technology CO., LTD. QW-JTR117 Page 4 REV:B
Reel Taping Specification D1 D2 D A B C d E F P W (mm) (inch) SOT-23 SYMBOL (inch) SOT-23 SYMBOL A (mm) B C d D D1 D2 E F P P0 P1 W W1 − 0.10 9.50 ± 1.50 − 0.004 0.374 ± 0.059 − 0.00 − 0.000 Trailer Device Leader 400mm (min)160mm (min) Direction of Feed Comchip Technology CO., LTD. QW-JTR117 Page 5 REV:B 120°
(pcs) Reel Size (inch) 73,000 REEL PACK Marking Code Part Number CMS3407-HF Marking Code 3407 MOSFET Suggested P.C.B. PAD Layout SIZE (inch) 0.035 (mm) 0.90 0.80 0.95 0.031 0.037 SOT-23 2.00 0.079 A B C D 2.90 0.114E A C B D E C Note: 1. The pad layout is for reference purposes only. Comchip Technology CO., LTD. QW-JTR117 Page 6 REV:B X / XX = Control code