CMS3134KQA-HF COMCHIP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

  • Surface mount package. - N-Channel switch with low RDS(on). - Operated at low logic level gate drive. - Complementary to CMS3139KQA-HF. Maximum Rating (at Ta=25 °C unless otherwise noted) Circuit Diagram N-Channel Halogen Free 0.016(0.40) Dimensions in inches and (millimeter) WBFBP-03E (1.0X0.6X0.5) 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) 0.004(0.10) 0.000(0.01) 0.022(0.55) 0.018(0.45) 0.025(0.64) REF. 0.012(0.30) 0.008(0.20) 0.004(0.10) 0.002(0.05) REF. 0.012(0.30) 0.008(0.20) 0.018(0.45) REF. 0.015(0.37) 0.011(0.27) 0.002(0.05) REF. 0.018(0.45) REF. 0.015(0.37) 0.011(0.27) D G S - 1. G : Gate - 2. S : Source - 3. D : Drain Pulsed drain current ( )tp=10µs IDM 1.80 A Lead temperature for soldering purposes(1/8” from case for 10 s) TL 260 °C REV:B Page 1QW-JTR49

SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage 380 VGS = 0V , ID = 250µA Zero gate voltage drain current Forward transconductance (Note 2) Reverse transfer capacitance Input capacitance Turn-on delay time (Note 3) Turn-off delay time (Note 3) Turn-on rise time (Note 3) Turn-off fall time (Note 3) VDS = VGS , ID = 250µA VDS = 20V , VGS = 0V VGS = 4.5V , ID = 0.65A VDS = 10V , ID = 0.8A V(BR) DSS IDSS RDS(on) gFS Coss Crss td(on) tr td(off) tf 1.1 1.6 6.7 4.8 17.3 7.4 V mΩ S nS ciss 120 Dynamic Characteristics (Note 4) VGS = 2.5V , ID = 0.55A 450 Output capacitance Typ pF Static Characteristics Electrical Characteristics (at Ta=25 °C unless otherwise noted) 0.35Gate threshold voltage (Note 2) VGS(th) Gate-body leakage current VGS = ±10V , VDS = 0V IGSS ±20 µA Drain-source on-resistance (Note 2) µA ID = 500mA , RGEN = 10Ω VGS = 4.5V , VDS = 10V Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size. VGS = 1.8V , ID = 0.45A 800 2. Pulse test: Pulse width = 300µs, duty cycle ≤ 2% Switching Characteristics (Note 4) Diode forward voltage IS = 0.15A , VGS = 0VVSD 1.2 V V MOSFET 3. Switching characteristics are independent of operating junction temperatures. 4. Graranted by design, not subject to producting. VDS = 16V , VGS = 0V , f = 1MHZ Comchip Technology CO., LTD. REV:B Page 2QW-JTR49

RATING AND CHARACTERISTIC CURVES (CMS3134KQA-HF) MOSFET VDS=3V Pulsed 0 1 2 4 2.0 4.0 1.0 3.0 0.5 2.5 1.5 3.5 TA=100°C TA=25°C ON-Resistance, RDS(ON) (mΩ) Drain Current, ID (A) Fig.3 - RDS(ON) — ID Source Current, IS (A) 0.1 Source to Drain Voltage, VSD (V) 0.2 Fig.5 - IS — VSD 1.0 1.6 0.01 1.4 0.6 Fig.6 - Threshold Voltage 25 50 75 100 125 0.5 0.7 0.2 0.8 0.6 0.4 0.3 Drain to Soruce Voltage, VDS (V) Fig.1 - Output Characteristics Drain Current, ID (A) Gate to Source Voltage, VGS (V) Fig.2 - Transfer Characteristics Drain Current, ID (A) Fig.4 - RDS(ON) — VGS 42 53 Gate to Source Voltage, VGS (V) ON-Resistance, RDS(ON) (mΩ) 800 400 100 600 500 300 700 200 500 300 200 400 350 250 450 Junction Temperature, TJ (°C) Threshold Voltage, VTH (V) 2.0 4.0 1.0 3.0 5.0 0.5 2.5 4.5 1.5 3.5 TA=25°C 0.4 1.20.0 0.8 Pulsed Pulsed ID=0.65A TA=100°C ID=250μA VGS=2.5V VGS=4.5V VGS=1.8V Pulsed TA=25°C TA=100°C TA=25°C VGS=3V VGS=2.5V VGS=2V VGS=1.5V Pulsed TA=25°C VGS=5V, 4V Comchip Technology CO., LTD. REV:B Page 3QW-JTR49

Reel Taping Specification o D1 D2 D C E P0 P1 F W P B C d D D2D1SYMBOL A (mm) E F P P0 P1 W W1SYMBOL (mm) Leader Tape 200±4 Empty PocketsComponents Trailer Tape 100±4 Empty Pockets A d 0.66 ± 0.05 8.00 + 0.30 - 0.10 0.315 + 0.012 - 0.004 WBFBP-03E (1.0X0.6X0.5) WBFBP-03E (1.0X0.6X0.5) 34 0.026 ± 0.002 Comchip Technology CO., LTD. REV:B Page 4QW-JTR49

WBFBP-03E 10,000 REEL ( pcs ) Reel Size (inch) REEL PACK CMS3134KQA-HF Marking Code Part Number Marking Code Suggested P.C.B. PAD Layout 1.00 X 0.60 PKG. 0.014(0.35) 0.022(0.55) 2 X 0.50 3 X 0.152 X 0.20 0.014(0.35) (0.008)0.20 34•34 ● 34 = Device code Solid dot = Pin 1 indicator Comchip Technology CO., LTD. REV:B Page 5QW-JTR49