CMS30N06D-HF COMCHIP | Alldatasheet

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  • Super low gate charge. - Advanced high cell density tench technology. QW-JTR183 Page 1 REV:A Dimensions in inches and (millimeters) TO-252 0.270(6.85) 0.246(6.25) 0.199(5.05) 0.222(5.65) 0.252(6.40) 0.228(5.80) 0.094(2.40) 0.087(2.20) 0.024(0.60) 0.016(0.40) 0.024(0.60) 0.016(0.40) 0.406(10.31) 0.382(9.71) 0.222(5.65) 0.199(5.05) 0.098(2.50) 0.083(2.10) 0.035(0.90) 0.028(0.70) 0.028(0.70) 0.020(0.50) Mechanical data - Case: TO-252, molded plastic. - Molding compound: UL flammability classification rating 94V-0. - Terminals: Matte tin-plated leads, solderability-per MIL-STD-202, method 208. MOSFET N-Channel - Excellent Cdv/ dt effect decline. Circuit Diagram - G : Gate - S : Source - D : Drain Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDSS VGSS Value IDM RθJC Unit V V A A °C/WThermal resistance junction to case (Note 1) ID Operating junction temperature range Storage temperature range TJ TSTG Power dissipation (TC=25°C) (Note 4) PD W ±20 120 4.2 -55 to +175 -55 to +175 Continuous drain current (TC=25°C) (Note 1) Continuous drain current (TC=100°C) (Note 1) ID 20 Pulsed drain current Single pulse avalanche energy (Note 3) EAS 40 mJ S D G

Comchip Technology CO., LTD. Page 2 REV:A MOSFET Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = 250µAVDSS Zero gate voltage drain current VDS = 48V, VGS = 0VIDSS RDS(on) Static drain-source on-resistance (Note 2) VGS = 10V, ID = 20A Min MaxTyp Unit µA mΩ V V = V , ID = 250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = 5A, VGS = 0V, TJ = 25°C V V ±100 2.51 1.2Diode forward voltage (Note 2) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = 15V, f = 1MHz 1880 170 140 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = 48V, VGS = 10V, ID = 15A 4.7 Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time td(on) tr td(off) tf nsVDD = 30V, VGS = 10V RG = 3Ω, ID = 15A 7.4 5.1 28.3 5.5 Switching Characteristics RDS(on) mΩ24 Notes: 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. VGS = 4.5V, ID = 15A A30Drain continuous forward current (Note 1, 4) IS 1.7 0.79 ns VR = 50V, IF = 15A, di/dt = 100A/µs Reverse recovery time trr nC18Reverse recovery change Qrr 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. QW-JTR183

Comchip Technology CO., LTD. Page 3 REV:A MOSFET Rating and Characteristic Curves (CMS30N06D-HF) Fig.1 - Output Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 2 41 5 Fig.3 - On-Resistance vs. Gate-Source Voltage Fig.5 - On-Resistance vs. Junction Temperature Gate-Source Voltage, VGS (V) 7 11 1513 On-Resistance, RDS(ON) (mΩ) 140-60 10020-20 180 Junction Temperature, TJ (°C) 5 9 On-Resistance, RDS(ON) (mΩ) VGS= 4.5V VGS= 5VVGS= 7V,10V VGS= 3V 25°C 150°C 175°C -55°C VGS= 10V ID= 20A VGS= 4.5V ID= 15A Fig.4 - Body-Diode Characteristics Fig.6 - Drain Source vs. Junction Temperature IF, (A) Fig.2 - On-Resistance vs. Drain Current and Gate Voltage Drain Current, ID (A) On-Resistance, RDS(ON) (mΩ) 10 3025 0.5 1 1.5 2 BVDSS, (V) Source-Drain Voltage, VSD (V) 5 15 Junction Temperature, TJ (°C) 0.1 100 VGS= 4.5V VGS= 10V -55°C25°C 175°C 140-60 10020-20 18060 ID= 250µA QW-JTR183

Comchip Technology CO., LTD. Page 4 REV:A MOSFET Rating and Characteristic Curves (CMS30N06D-HF) Fig.7 - Capacitance Characteristics Drain-Source Voltage, VDS (V) C, (pF) 0 20 40 60 10000 Fig.9 - Transfer Characteristics 100 Gate-Source Voltage, VGS (V) 1000 Fig.10 - Gate-Charge Characteristics 2.5 Fig.8 - Gate Voltage vs. Junction Temperature VGS(TH), (V) 10 30 40 1.5 2.0 Qg, (nC) 0.5 1.0 -55°C Ciss Coss Crss Junction Temperature, TJ (°C) 140-60 10020-20 18060 ID= 250µA 0 2 4 6 Drain Current, ID (A) 175°C 25°C Gate-Source Voltage, VGS (V) QW-JTR183 Fig.11 - Maximum Safe Operating Area 0.1 101 100 0.1 100 Drain Current, ID (A) Drain-Source Voltage, VDS (V) TC=25°C,D=0 Limited by on-state resistance DC 0ms 1ms 1µs 0µs 0µs

Comchip Technology CO., LTD. Page 5 REV:A Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) E F P P0 P1 T W W1 TO-252 SYMBOL (mm) (inch) A B C d D D1 D2 − 0.008 3.937 ± 0.039 100 ± 1.00 0.827 ± 0.012 TO-252 Reel Taping Specification DD1D2 120° E F P P0 P1 T W A B C d MOSFET QW-JTR183

Comchip Technology CO., LTD. Page 6 REV:A Marking Code Standard Packaging Case Type TO-252 REEL (pcs) Reel Size (inch) 132,500 REEL PACK Part Number Marking Code CMS30N06D-HF 200N06D Suggested P.C.B. PAD Layout SIZE (inch) 0.071 (mm) 1.80 2.70 1.50 0.106 0.059 TO-252 2.30 0.091 A B C D 6.40 0.252E 6.80 0.268F A B C D E F D 200N06D XXX = Control code XXX MOSFET G QW-JTR183