CMS25P06H8-HF COMCHIP | Alldatasheet

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  • Advanced trench cell design. - Low thermal resistance. Mechanical data - Case: PDFN5x6-8L, molded plastic. - Mounting position: Any. Dimensions in inches and (millimeter) PDFN5x6-8L Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDS VGS Value IDM RθJC Thermal resistance junction to ambient RθJA Unit V V A A °C/W °C/WThermal resistance junction to case ID TJ, TSTG °C Power dissipation TC=25°C Ptot W -60 ±20 -25 -40 3.5 62.5 Continuous drain current Peak drain current, pulsed VGS=10V (Note 1) -55 to +150 0.165(4.20) 0.144(3.65) 0.059(1.50) 0.010(0.25) REF 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.197(5.00) 0.189(4.80) 0.244(6.20) 0.228(5.80) 0.014(0.35) 0.010(0.25) 0.050(1.27) TYP 1 2 3 4 8 7 6 5 0.005(0.125) 0.230(5.85) 0.222(5.65) S S S G D D D D Circuit Diagram - G : Gate - S : Source - D : Drain Operating junction and storage temperature range 0.205(5.20) 0.189(4.80) 0.150(3.80) 0.130(3.30) 0.043(1.10) 0.008(0.20) REF 0.030(0.75) 0.018(0.45) D D D D S S S G

Electrical Characteristics (at TA=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Drain-source breakdown voltage ID = -250µABVDSS Drain-source leakage current VDS = -24VIDSS RDS(on)Drain-source on-state resistance VGS = -10V, ID = -4.1A VGS = -4.5V, ID = -3A Min MaxTyp Unit µA mΩ V = V , ID = -250µADS GSGate-source threshold voltage VGS(th) Gate leakage current VGS = ±20VIGSS nA Static Characteristics V V -60 ±100 -2-1 Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time td(on) tr td(off) tf nsVGEN = -10V, VDS = -30V, RL = 3Ω, RG = 4.5Ω 197 112 Comchip Technology CO., LTD. REV:A Page 2QW-JTR159 V ns Body-Diode Characteristics IS = -2A, VGS = 0V 1.2 25Reverse recovery time trr Drain-source diode forward voltage VSD nC7.5Reverse recovery charge Qrr ISD = -10A, dISD/dt = 100A/µs Dynamic Characteristics Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = -30V, f = 1MHz 1408 Total gate charge Gate to drain charge Gate to source charge Qg Qgs Qgd nC VDS = -30V, ID = -10A, VGS = -10V 6.5 Notes: 2. Guaranteed by design, not subject to production testing. 1. Pulse width ≤ 300µs, duty cycle ≤ 2%.

Fig.5 - Drain-Source on Resistance Junction Temperature, TJ (°C) Normalized on Resistance 1.0 0.4 2.0 0.6 1.2 1.4 0.8 0.2 1.6 1.8 75 150125-50 10050250-25 VGS= -10V, IDS= -10A RON@=TJ= 25°C:50mΩ Fig.2 - Drain-Source on Resistance Drain Current, -ID (A) 8 16140 12 On Resistance, RDS(ON) (mΩ) 62 10 VGS= -10V VGS= -4.5V Fig.1 - Output Characteristics 0 1 0.8 Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) 0.4 0.60.2 -2V -3V Rating and Characteristic Curves (CMS25P06H8-HF) MOSFET Comchip Technology CO., LTD. REV:A Page 3QW-JTR159 Gate-Source Voltage, -VGS (V) Fig.3 - Transfer Characteristics 108 9 125 On Resistance, RDS(ON) (mΩ) 61 75 200 150 175 432 100 IDS= -10A Normalized Threshold Voltage Junction Temperature, TJ (°C) Fig.4 - Gate Threshold Voltage 1.0 0.4 75 150125-50 10050 1.6 0.6 1.2 1.4 250-25 0.8 0.2 IDS= -250µA Fig.6 - Source-Drain Diode Forward Source Current, IS (A) 0.1 0.2 Source-Drain Voltage, -VSD (V) TJ=25°C TJ=150°C

Fig.7 - Capacitance 0 50 1600 2000 1800 1400 Drain-Source Voltage, -VDS (V) Capacitance, C (pF) 200 1200 1000 400 600 800 3010 Ciss Coss Crss f=1MHz 3515 255 45 Fig.8 - Gate Charge Gate Charge, QG (nC) 8 240 Gate-Source Voltage, -VGS (V) VDS= -30V IDS= -10A Fig.10 - Drain Current Junction Temperature, TJ (°C) Drain Current, -ID (A) 20 40 60 16080 100 120 140 TC=25°C, VG= -10V Fig.9 - Power Dissipation Junction Temperature, TJ (°C) Power, Ptot (W) 0 20 40 60 160 100 120 140 MOSFET Rating and Characteristic Curves (CMS25P06H8-HF) Comchip Technology CO., LTD. REV:A Page 4QW-JTR159 Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) Fig.11 - Safe Operation Area 0.01 5001 10 200 100 0.1 100 0.1 0.01 RDS(ON) Limit TC=25°C 300µs 1ms 10ms 100ms DC TC=25°C

Comchip Technology CO., LTD. REV:A Page 5QW-JTR159 Reel Taping Specification Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) A B C d D D1 D2 E 1.55 ± 0.05 331 ± 1.00 1.75 ± 0.10 0.061 ± 0.002 13.031 ± 0.039 0.069 ± 0.004 SYMBOL (mm) (inch) F P0 P1P T W W1 PDFN5x6 -8L 6.60 ± 0.10 0.260 ± 0.004 5.50 ± 0.10 0.217 ± 0.004 1.30 ± 0.05 0.051 ± 0.002 101 ± 2.00 3.976 ± 0.079 13.30 ± 0.20 0.524 ± 0.008 0.25 ± 0.05 0.010 ± 0.002 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 15.50 ± 3.00 0.610 ± 0.118 DD1D2 120° AP B C T W E F dP1 P0 PDFN5x6 -8L

Comchip Technology CO., LTD. REV:A Page 6QW-JTR159 Marking Code Part Number Marking Code CMS25P06H8-HF 25P06G Suggested P.C.B. PAD Layout SIZE (inch)(mm) PDFN5x6-8L A B C D E F H GA B C D E F G H I J K I J K L N M L NM O P O P 1.27 0.66 0.82 0.61 4.10 0.755 4.42 5.61 0.60 1.02 1.27 0.295 3.81 1.825 0.18 6.61 0.050 0.026 0.032 0.024 0.161 0.174 0.221 0.024 0.040 0.050 0.150 0.007 0.260 0.030 0.012 0.072 Standard Packaging Case Type REEL (pcs) Reel Size (inch) REEL PACK PDFN5x6-8L 5,000 25P06G Pin 1 XXXXXX xxxxxx = Control code