CMS11P04Q8-HF COMCHIP | Alldatasheet

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  • Single drive requirement. - Low on resistance. REV:A Page 1QW-JTR238 Dimensions in inches and (millimeter) SOP-8 0.061(1.55) 0.053(1.35) 0.069(1.75) 0.053(1.35) 0.010(0.25) 0.004(0.10) 0.020(0.51) 0.013(0.33) 0.010(0.25) 0.007(0.17) 0.201(5.10) 0.185(4.70) 0.157(4.00) 0.150(3.80) 0.244(6.20) 0.228(5.80) 0.050(1.27) 0.016(0.40) 0.050(1.27) Typ. Mechanical data - Case: SOP-8, molded plastic. - Mounting position: Any. - Terminal: Tin plated, solderable per MIL-STD-750, method 2026. - Fast switching characteristic. Circuit Diagram G:Gate S:Source D:Drain 1 2 3 4 8 7 6 5 D D S S S G D D S S S G D D D D Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage Unit SymbolParameter VDS VGS Conditions Value ID ID IDM EAS PD PD PD PD TJ, TSTGOperating junction and storage temperature range Total power dissipation (Note 1) TC = 25°C TC = 100°C TA = 70°C TA = 25°C Avalanche energy @L=0.5mH Pulsed drain current (Note 3) Continuous drain current (Note 1) VGS = -10V, TC = 25°C VGS = -10V, TC = 100°C VGS = -10V, TA = 25°C VGS = -10V, TA = 70°C ID ID -40 ±20 -11 -4.8 -3.8 -44 1.9 1.2 -55 to +150 V A W A mJ Continuous body diode forward current @TC = 25°C (Note 1) IS -8 A Pulsed body diode forward current @TC = 25°C (Note 1) ISM -32 A Avalanche current @L=0.1mH IAS -15 A Continuous drain current (Note 2) Total power dissipation (Note 2) CMS11P04Q8-HF

Electrical Characteristics (at TA=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Min MaxTyp Drain-source breakdown voltage BVDSS Gate threshold voltage VGS(th) Drain-source leakage current IDSS Gate-source leakage current IGSS RDS(on)Static drain-source on-resistance Forward transconductance gfs Turn-on delay time (Note 1,2) Turn-off delay time (Note 1,2) Rise time (Note 1,2) Fall time (Note 1,2) td(on) tr td(off) tf Total gate charge (Note 1,2) Gate-drain charge (Note 1,2) Gate-source charge (Note 1,2) Qg Qgs Qgd Diode forward voltage (Note 1) VSD Unit V nA µA mΩ S nS nC V nS V nC Comchip Technology CO., LTD. trr Page 2 Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pF Dynamic Qrr Static Rg Source-drain diode Reverse recovery time Reverse recovery charge Gate resistance VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = -10V, ID = -5A VGS = ±20V, VDS = 0V VDS = -32V, VGS = 0V VGS = -4.5V, ID = -5A Ω VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz VDS = -20V, ID = -6A, VGS = -10V VDS = -20V, ID = -6A, VGS = -10V RGS = 1Ω IS = -6A, VGS = 0V IF = -6A, dIF/dt = 100A/µs -40 -1 -2.5 8.6 ±100 6345 930 9.3 2.8 3.5 6.8 -0.85 9.6 -1.2 Notes: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Independent of operating temperature. REV:A Thermal Data Unit Parameter Steady state °C/W °C/W Thermal resistance, junction to case Thermal resistance, junction to ambient (Note 2) Symbol RθJC RθJA Notes: 1. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Rating are based on low frequency and low duty cycles to keep initial TJ=25°C. VGS = -10V, ID = -6A mΩ4535 Total gate charge (Note 1,2) Qg 19 VDS = -20V, ID = -6A, VGS = -4.5V QW-JTR238

Typical Rating and Characteristic Curves (CMS11P04Q8-HF) MOSFET Fig.2 - Breakdown Voltage vs Ambient Temperature Junction Temperature, TJ (°C) Normalized Drain-Source Breakdown Voltage, -BVDSS Fig.4 - Body Diode Current vs Source-Drain Voltage Body Diode Current, -IS (A) Source-Drain Voltage, -VSD (V) Fig.6 - Drain-Source On-State Resistance vs Junction Temperature Fig.1 - Typical Output Characteristics Drain-Source Voltage, -VDS (V) Drain Current, -ID (A) Fig.3 - Static Drain-Source On-State Resistance vs Drain Current Drain Current, -ID (A) Static Drain-Source On-State Resistance, RDS(ON) (mΩ) Gate-Source Voltage, -VGS (V) 75-75 0 0.8 0.9 1.0 0.2 0.6 1.2 -75 17525 0.5 1.5 2.5 -50 1.2 1.0 -25 Fig.5 - Static Drain-Source On-State Resistance vs Gate-Source Voltage 1.1 0 2 4 8 10 Comchip Technology CO., LTD. Page 3 6 -25 25 50 100 125 150 0 20 0 0.4 0.8 Static Drain-Source On-State Resistance, RDS(ON) (mΩ) 0 2 4 8 106 Junction Temperature, TJ (°C) Normalized Static Drain-Source On-State Resistance, RDS(ON) 0-50 7550 125100 150 2.0 1.0 VGS= -10V, ID= -6A RDS(ON) @TJ=25°C:35mΩ typ. REV:A 175 ID= -250µA VGS=0V 10 15 205 TJ=25°C TJ=150°C QW-JTR238 10 155 VGS= -3.5V VGS= -4V -10V,-9V,-8V,-7V,-6V,5V VGS= -10V VGS= -4.5V ID= -6A

Fig.8 - Threshold Voltage vs Junction Temperature Junction Temperature, TJ (°C) Normalized Threshold Voltage, -VGS(th) Fig.10 - Gate Charge Characteristics Total Gate Charge, Qg (nC) Gate-Source Voltage, -VGS (V) Fig.12 - Maximum Drain Current vs Junction Temperature Fig.7 - Capacitance vs Drain-to-Source Voltage Drain-Source Voltage, -VDS (V) Capacitance, (pF) Fig.9 - Forward Transfer Admittance vs Drain Current Drain Current, -ID (A) Forward Transfer Admittance, GFS (S) Drain-Source Voltage, -VDS (V) 17575-75 0 0.4 0.6 1.0 17525 -50 1.4 0.01 0.1 Fig.11 - Maximum Safe Operating Area 1.2 0 40 100 Comchip Technology CO., LTD. Page 4 -25 25 50 100 125 150 0.001 0.01 0.1 1 0 5 10 15 0.01 1 10 100 0.1 Junction Temperature, TJ (°C) 7550 125100 150 10000 0.8 ID= -1mA ID= -250µA Drain Current, -ID (A) Maximum Drain Current, -ID (A) REV:A 0.01 0.1 1000 100 QW-JTR238 Typical Rating and Characteristic Curves (CMS11P04Q8-HF) 3010 1000 Crss Coss Ciss VDS= -15V TA=25°C Pulsed VDS= -10V RDS(ON) Limited TA=25°C, TJ=150°C VGS= -10V, RθJA=65°C/W single pulse 100µs 1ms 10ms DC 10s 100ms VDS= -20V ID= -6A VGS= -10V, RθJA=65°C/W

Fig.13 - Single Pulse Power Rating, Junction to Ambient Pulse Width, (s) Power, (W) 0.001 0.01 120 Comchip Technology CO., LTD. Page 5 0.1 1 10 REV:A 160 QW-JTR238 Typical Rating and Characteristic Curves (CMS11P04Q8-HF) TJ(MAX)=150°C, TA=25°C RθJA=65°C/W

Comchip Technology CO., LTD. Page 6 REV:A Reel Taping Specification T C P A d W P1 P0 B E F o 120 DD1D2 SYMBOL (mm) (inch) SYMBOL (mm) (inch) A B dC D D2D1 E F P0P P1 WT W1 0.693 + 0.039 − 0.0040.157 ± 0.004 − 0.10 17.60 + 1.00 − 0.004.00 ± 0.10 Trailer Device Leader 200mm (min)160mm (min) Direction of Feed SOP-8 SOP-8 QW-JTR238

Comchip Technology CO., LTD. Page 7 REV:A Marking Code Standard Packaging REEL PACK Case Type REEL Reel Size( pcs ) (inch) SOP-8 4,000 13 Suggested P.C.B. PAD Layout SIZE (inch) 0.024 (mm) 0.60 1.52 1.27 0.060 0.050 SOP-8 4.00 0.157 A B C D 7.00 0.276E B D C E A Part Number Marking Code XXXX = Control code Pin 1 CMS11P04Q8-HF B040P04 B040 P04 XXXX QW-JTR238