CMS10N03Q8-HF

CMS10N03Q8-HF COMCHIP | Alldatasheet

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Features

• Single drive requirement. - Low on-resistance. - Fast switching characteristic. - Dynamic dv/dt rating. - Repetitive avalanche rated. Notes: 1. Pulse width limited by maximum junction temperature. 2. Duty cycle≤1%. 3. 40°C/W when mounted on a 1 in² pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad. Drain-source voltage Gate-source voltage Unit SymbolParameter VDS VGS ID Value ±20 10.2 V V A Pulsed drain current (Note 1) IDM 40 A Continuous drain current TA = 25°C, VGS = 10V TA = 100°C, VGS = 10V Operating junction temperature Storage temperature range PD RθJA TJ TSTG 1.2 -55 to +150 -55 to +150 W °C/W Thermal resistance from junction to ambient (Note 3) Power dissipation 3.1 RθJC 25 °C/WThermal resistance from junction to case TA = 25°C TA = 100°C 6.5 Avalanche energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive avalanche energy @ L=0.05mH (Note 2) EAS EAR 1.6 mJ mJ IAS 10 AAvalanche current Circuit Diagram G G : GATE S : SOURCE D : DRAIN D S S S D D D REV:C Page 1QW-JTR56 Mechanical data - Case: SOP-8, molded plastic. - Mounting position: Any.

Electrical Characteristics (at TC=25°C unless otherwise noted) Note: 1. Pulse Test: Pulse width≤300μs, duty cycle≤2%. 2. Independent of operating temperature. 3. Pulse width limited by maximum junction temperature. MOSFET SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage VGS=0V , ID=250µA Zero gate voltage drain current Forward transconductance Reverse transfer capacitance Input capacitance Turn-on delay time (Note 1 & 2) Turn-off delay time (Note 1 & 2) Rise time (Note 1 & 2) Fall time (Note 1 & 2) VDS=24V , VGS=0V VDS=20V , VGS=0V , TJ=125°C VDS=5V , ID=8A VDS=15V , ID=1A VGS=10V , RG=6Ω BVDSS IDSS RDS(ON) GFS Coss Crss td(ON) tr td(OFF) tf 7.5 V µA Gate-source leakage IGSS ±100 nA S pF ns Ciss 715 Source-Drain Diode VGS=10V , ID=9A 18 Gate-source threshold voltage VDS=VGS , ID=250µAVGS(th) 1.0 V3.0 Output capacitance Typ Static Dynamic VGS=4.5V , ID=7A mΩ 22.3 Static Drain-source on-state resistance (Note 1) 13.6 Qgs Qgd nC Qg 11 1.9 VDS=15V , VGS=0V f=1MHz VDS=15V , ID=9A, VGS=10V IS ISM A 2.3 9.2 Total gate charge (Note 1& 2) Gate-source charge (Note 1 & 2) Gate-drain charge (Note 1 & 2) Continuous source-drain diode current (Note 1) Pulse diode forward current (Note 3) 1.7 VGS=±20V Qg 6.4Total gate charge (Note 1 & 2) VDS=15V , ID=9A , VGS=10V VDS=15V , ID=9A , VGS=5V Gate resistance VDS=0V , VGS=15mV ,f=1MHzRg 2.2 trr Qrr IF=2.3A , dIF/dt=100A/µs nC ns50 Reverse recovery time Recovered charge Diode forward voltage (Note 1) IF=2.3A , VGS=0VVSD 1.2 V0.78 Comchip Technology CO., LTD. REV:C Page 2QW-JTR56

Typical Rating and Characteristic Curves (CMS10N03Q8-HF) Fig.1 - Typical Output Characteristics Capacitance, C (pF) Drain-Source Voltage, VDS (V) Fig.4 - Capacitance vs. Drain-Source Voltage 100 Static Drain-Source On-State Resistance, RDS(ON) (mΩ) 10000 1000 0.1 1 10010 Forward Transfer Admittance, GFS (S) Drain Current, ID (A) Drain-Source Voltage, VDS (V) 1 2 3 4 5 VGS=4VVGS=5V VGS=10V, 9V, 8V, 7V, 6V VGS=3V Fig.2 - Static Drain-Source On-State Resistance vs. Drain Current Drain Current, ID (A) Static Drain-Source On-State Resistance, RDS(ON) (mΩ) 0.1 1 10010 0.01 100 1000 VGS = 4.5V VGS = 10V VGS = 3V 200 280 120 240 Gate-Source Voltage, VGS (V) Fig.3 - Static Drain-Source On-State Resistance vs. Gate-Source Voltage 2 6 8 104 160 ID = 9A Ciss Coss Crss Fig.5 - Forward Transfer Admittance vs. Drain Current 0.1 100 0.001 0.01 0.01 10.1 Drain Current, ID (A) Pulsed TA=25°C VDS=10V VDS=15V VDS=5V Gate-Source Voltage, VGS (V) Total Gate Charge, Qg (nC) Fig.6 - Gate Charge Characteristics 0 2 6 8 124 = 9A VDS=5V VDS=10V VDS=15V ID = 9A ID = 7A MOSFET Comchip Technology CO., LTD. REV:C Page 3QW-JTR56

Drain Current, ID (A) Fig.7 - Typical Transfer Characteristics Gate-Source Voltage, VGS (V) 2 4 6 8 VDS=10V MOSFET Comchip Technology CO., LTD. REV:C Page 4QW-JTR56 Typical Rating and Characteristic Curves (CMS10N03Q8-HF)

Reel Taping Specification T C P A d F E W P1 P0 B MOSFET D B C d D D2SYMBOL (mm) (inch) SYMBOL (mm) E F P P0 P1 W W1 1.75 0.10± 0.069 0.004± 5.50 0.05± 0.217 0.002± 6.40 ± 0.10 0.252 0.004± 5.20 0.10± 0.205 0.004± 2.10 0.10± 0.083 0.004± A 330.00 ± 1.00 100.00 ± 0.50 3.937 ± 0.02012.992 ± 0.039 13.00 0.20± 0.512 0.008± 12.00 + 0.30 - 0.10 0.472 + 0.012 - 0.004 SOP-8 1.50 + 0.10 - 0.00 0.059 + 0.004 - 0.000 17.60 + 1.00 - 0.00 0.693 + 0.039 - 0.000 SOP-8 Comchip Technology CO., LTD. REV:C Page 5QW-JTR56

Case Type REEL Reel Size( pcs ) (inch) SOP-8 4,000 13 Suggested P.C.B. PAD Layout SIZE (inch) 0.024 (mm) 0.60 1.52 1.27 0.060 0.050 SOP-8 4.00 0.157 A B C D 7.00 0.275E B D C E A MOSFET Part Number Marking Code CMS10N03Q8-HF B20N03 Comchip Technology CO., LTD. REV:C Page 6QW-JTR56 XXXX = Control code B20N03 XXXX Pin 1