CMS08NN10H8-HF COMCHIP | Alldatasheet

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REV:A Page 1QW-JTR192 - Low gate charge. - Low on-resistance. - Fast switching characteristic. Maximum Ratings (at TA=25°C unless otherwise noted) Gate-source voltage Unit SymbolParameter VDS VGS ID V V A Continuous drain current (Note 1) VGS = 10V, TC = 25°C VGS = 10V, TC = 100°C Limits 100Drain-source voltage ±20 2.7 Pulsed drain current (Note 3) IDM A PD W Total Power dissipation (Note 1) 6.4 RθJC TJ, TSTG °C/W RθJA °C/W Thermal resistance, junction to case Thermal resistance, junction to ambient (Note 2) Operating junction and storage temperature range -55 to +150 Continuous drain current (Note 2) VGS = 10V, TA = 25°C VGS = 10V, TA = 70°C 2.2 ISContinuous body diode forward current @ TC = 25°C (Note 1) 13 TC = 25°C TC = 100°C TA = 75°C TA = 25°C 1.8 1.2 A Mechanical data - Case: DFN5x6, molded plastic. - Mounting position: Any. Circuit Diagram G:Gate S:Source D:Drain D1S1 Dimensions in inches and (millimeter) DFN5x6 0.197(5.00) 0.189(4.80) 0.240(6.10) 0.232(5.90) 0.228(5.80) 0.224(5.70) 0.149(3.78) 0.043(1.10) Min. 0.028(0.71) 0.156(3.96) 8 7 6 5 1 2 3 4 0.008(0.20) 0.002(0.06) 0.020(0.51) 0.013(0.33) 0.142(3.61) 0.133(3.38) 0.024(0.61) 0.016(0.41) 0.020(0.51) 0.020(0.50) Min. 0.050(1.27) BSC. 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.008(0.20) - ESD protected gate. Total Power dissipation (Note 2)

Electrical Characteristics (at TA=25°C unless otherwise noted) MOSFET SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage Zero gate voltage drain current Forward transconductance Reverse transfer capacitance Input capacitance BVDSS IDSS RDS(ON) GFS Coss Crss V µA Gate-source leakage IGSS S pF Ciss Source-Drain Diode Gate-source threshold voltage VGS(th) V Output capacitance Typ Static Dynamic mΩStatic Drain-source on-state resistance trr Qrr nC nsReverse recovery time Recovered charge Diode forward voltage (Note 4) VSD V Comchip Technology CO., LTD. REV:A Page 2 Notes: 1. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for case where additional heatinking is used. VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA 100 1.0 2.5 VGS = ±16V, VDS = 0V ±10 VDS = 80V, VGS = 0V 1 VGS = 10V, ID = 2A VGS = 4.5V, ID = 2A 120 165 120 VDS = 10V, ID = 2A 3 VDS = 50V, VGS = 0V, f = 1MHz 270 IS = 2A, VGS = 0V 0.85 1.2 IF = 2A, dIF/dt = 100A/µs QW-JTR192 Qgs Qgd nC QgTotal gate charge (Note 4, 5) Gate-source charge (Note 4, 5) Gate-drain charge (Note 4, 5) VDS = 50, ID = 2A, VGS = 10V 6.2 1.1 1.4 Turn-on delay time (Note 4, 5) Turn-off delay time (Note 4, 5) Rise time (Note 4, 5) Fall time (Note 4, 5) td(ON) tr td(OFF) tf nsVDS = 50V, ID = 2A, VGS = 10V, RGS = 6Ω 5.2 2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. RgGate resistance Ω6.5f = 1MHz 4. Pulse width ≤ 300µs, duty cycle ≤ 2%. 5. Independent of operating temperature. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C.

Typical Rating and Characteristic Curves (CMS08NN10H8-HF) MOSFET Comchip Technology CO., LTD. REV:A Page 3 Fig.2 - Breakdown Voltage vs Ambient Temperature Junction Temperature, TJ (°C) Normalized Drain-Source Breakdown, BVDSS -75 -50 -25 0 25 50 75 100 125 150 175 0.8 1.0 1.2 1.1 Fig.1 - Typical Output Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 42 6 8 10 ID=250µA, VGS=0V Fig.4 - Body Diode Current vs Source-Drain Voltage Body Drain Current, Is (A) 0.6 0.8 1.0 1.2 0.2 Fig.3 - Static Drain-Source On-State Resistance vs Drain Current Drain Current, ID (A) Static Drain-Source On-State Resistance, RDS(on) (mΩ) 200 Fig.6 - Drain-Source On-State Resistance vs Junction Temperature Junction Temperature, TJ (°C) Normalized Static Drain-Source On-State Resistance, RDS(on) -75 -50 -25 0 25 50 75 100 125 150 175 0.5 2.5 Fig.5 - Static Drain-Source On-State Resistance vs Gate-Source Voltage Gate-Source Voltage, VGS (V) Static Drain-Source On-State Resistance, RDS(on) (mΩ) 0 2 4 6 8 10 120 280 240 200 160 VGS=4.5V VGS=10V Source-Drain Voltage, VSD (V) 0.4 TJ=150°C TJ=25°C 1.0 2.0 VGS=10V, ID=2A RDSON@TJ=25°C:92mΩ Typ. ID=2A QW-JTR192 VGS= 3V VGS= 3.5V VGS= 4V VGS= 5V 10V, 9V, 8V, 7V, 6V 0.9 120 160 0 42 6 8 10 42 6 8 10 1.5

Comchip Technology CO., LTD. REV:A Page 4 Fig.8 - Threshold Voltage vs Junction Temperature Junction Temperature, TJ (°C) -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 Fig.7 - Capacitance vs Drain-to-Source Voltage Drain-Source Voltage, VDS (V) Capacitance, (pF) 0 10 20 50 100 10000 Fig.10 - Gate Charge Characteristics Total Gate Charge, Qg (nC) 0 4 8 Fig.9 - Forward Transfer Admittance vs Drain Current Drain Current, ID (A) Forward Transfer Admittance, GFS (S) 0.001 0.1 1 10 Fig.12 - Maximum Drain Current vs Junction Temperature Junction Temperature, TJ (°C) Maximum Drain Current, ID (A) 25 50 75 100 125 150 175 Fig.11 - Maximum Safe Operating Area Drain-Source Voltage, VDS (V) Drain Current, ID (A) Gate-Source Voltage, VGS (V) Normalized Threshold Voltage, VGS(th) 0.4 ID=1mA ID=250µA 2 6 VDS=50V, ID=2A 2.5 1.5 VGS=10V RθJA=70°C/W 0.1 0.01 0.01 0.1 1 100.01 100 0.1 0.01 QW-JTR192 0.5 Ta=25°C Pulsed VGS=15V VGS=10V 30 40 Ciss Crss Coss 1000 TA=25°C, TJ=150°C VGS=10V, RθJA=70°C/W Single pulse RDSON Limited DC 100ms 10ms 1ms 100µs 10s Typical Rating and Characteristic Curves (CMS08NN10H8-HF)

Comchip Technology CO., LTD. REV:A Page 5 Fig.13 - Single Pulse Power Rating, Junction to Ambient Pulse Width, (s) Power, (W) 200 250 0.0001 0.1 1 100.01 QW-JTR192 150 100 0.001 TJ(MAX)=150°C TA=25°C RθJA=70°C/W Typical Rating and Characteristic Curves (CMS08NN10H8-HF)

Reel Taping Specification MOSFET Comchip Technology CO., LTD. Page 6 REV:A T C P A d W P1 P0 B E F o 120 DD1D2 SYMBOL (mm) (inch) SYMBOL (mm) (inch) A B dC D D2D1 E F P0P P1 WT W1 − 2.00 13.00 + 0.50 − 0.00 1.50 + 0.10 − 0.00 − 0.079 0.512 + 0.020 − 0.000 0.059 + 0.004 − 0.000 Trailer Device Leader 400mm (min)160mm (min) Direction of Feed DFN5x6 DFN5x6 QW-JTR192

Case Type REEL Reel Size( pcs ) (inch) DFN5x6 3,000 13 MOSFET Part Number Marking Code Comchip Technology CO., LTD. Page 7 REV:A CMS08NN10H8-HF B095A10KR QW-JTR192 B095A 10KR XXXXXPin 1 XXXXX = Control code Suggested P.C.B. PAD Layout SIZE (inch) 0.024 (mm) 0.61 1.27 1.27 0.050 0.050 DFN5x6 4.42 0.174 A B C D 0.60 0.024E A B C D E F G H I J 3.91 0.154 3.81 0.150 F G 4.32 0.170H I J 4.52 0.178 6.61 0.260