CMS02N06KT-HF

CMS02N06KT-HF COMCHIP | Alldatasheet

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• Simple drive requirement. CMS02N06KT-HF - Small package outline. - ESD protected gate. MOSFET Maximum Ratings (at TA=25°C unless otherwise noted) Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse width ≤ 300 μs, duty cycle ≤ 2%. Drain-source voltage Gate-source voltage Operating junction temperature range Storage temperature range Unit SymbolParameter VDS VGS ID PD RθJA TJ TSTG Value ±20 2.2 0.88 -55 to +150 -55 to +150 V V A W °C/W Maximum thermal resistance from junction to ambient (Note 3) Pulsed drain current (Note 1 & 2) IDM 10 A Maximum power dissipation (Note 3) 1.38 RθJC 62Maximum thermal resistance from junction to case (Note 3) Continuous drain current (Note 3) TA = 25°C, VGS = 10V TA = 70°C, VGS = 10V TA = 25°C TA = 70°C 1.8 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. Halogen Free Circuit Diagram G D S G : GATE S : SOURCE D : DRAIN Dimensions in inches and (millimeter) D G S 0.120(3.04) 0.110(2.80) 0.067(1.70) 0.047(1.20) 0.079(2.00) 0.067(1.70) 0.045(1.15) 0.035(0.89) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.045(1.15) 0.033(0.85) 0.116(2.95) 0.083(2.10) 0.012(0.30) 0.024(0.60) 0.008(0.20) 0.003(0.08) 0.020(0.50) 0.028(0.72) SOT-23 REV:B QW-JTR48 Page 1 Mechanical data - Case: SOT-23, molded plastic. - Mounting position: Any.

Electrical Characteristics (at TA=25°C unless otherwise noted) Note: 1. Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%. MOSFET SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage VGS=0V, ID=250µA Zero gate voltage drain current Forward transconductance (Note 1) Diode forward voltage (Note 1) Reverse transfer capacitance Input capacitance Turn-on delay time Turn-off delay time Rise time Fall time VDS=48V, VGS=0V VDS=48V, VGS=0V (TJ=85°C) VDS=10V, ID=1A IS=0.45A , VGS=0V VDS=30V, ID=2.2A, VGS=10V, RG=1Ω BVDSS IDSS RDS(on) GFS VSD Coss Crss td(ON) tr td(OFF) tf 1.4 3.2 16.6 10.2 4.8 V µA Gate-body leakage current VGS=±16V, VDS=0VIGSS ±10 µA S pF ns 121 Source-Drain Diode VGS=10V, ID=2.2A 235 V Gate threshold voltage VDS=VGS, ID=250µAVGS(th) 1.0 V2.5 Output capacitance Typ Static Dynamic VGS=4.5V, ID=1.3A mΩ 202 Drain-source on-state resistance (Note 1) 180 280 Qgs Qgd nC Qg 4.1 0.9 0.5 VDS=30V, VGS=0V, f=1MHZ VDS=48V, ID=2.2A, VGS=10V IS ISM A 0.78 2.2 Total gate charge Gate-source charge Gate-drain charge Continuous source-drain diode current (Note 1) Pulse diode forward current (Note 1) Ciss Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR48 Page 2

Typical Rating and Characteristic Curves (CMS02N06KT-HF) MOSFET Drain Current, ID (A) 400 800 1200 200 600 1000 Drain to Source Voltage, VDS (V) Drain Current, ID (A) Fig.1 - Typical Output Characteristics 1 2 3 4 5 VGS=4V VGS=3.5V VGS=3V VGS=10V, 9V, 8V, 7V, 6V, 5V, 4.5V Fig.2 - Static Drain-Source On-State Resistance vs. Drain Current Capacitance, C (pF) Drain-Source Voltage, VDS (V) Fig.4 - Capacitance vs. Drain-Source Voltage Gate-Source Voltage, VGS (V) 0.01 0.1 101.0 0.001 100 1000 VGS = 4.5V VGS = 10V ID = 2.2A Static Drain-Source On-State Resistance, RDS(ON) (mΩ) Fig.3 - Static Drain-Source On-State Resistance vs. Gate-Source Voltage Static Drain-Source On-State Resistance, RDS(ON) (mΩ) 2 6 8 104 1000 100 0 5 15 20 3010 25 Ciss Coss Crss 0.1 0.001 Gate-Source Voltage, VGS (V) Total Gate Charge, Qg (nC) Fig.6 - Gate Charge Characteristics 00.01 0.01 1 100.1 0 1 3 4 52 Drain Current, ID (A) Fig.5 - Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance, GFS (S) VDS=10V Pulsed TA=25°C ID = 2.2A VDS=30V VDS=48V Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR48 Page 3

Drain Current, ID (A) Fig.7 - Typical Transfer Characteristics 7 10 VDS=10V Gate-Source Voltage, VGS (V) 1 2 3 4 5 6 8 9 Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR48 Page 4 Typical Rating and Characteristic Curves (CMS02N06KT-HF)

d F E D1 D2 D C C A P B P0 P1 MOSFET W 2.165 ± 0.039 0.125 ± 0.004 3.23 ± 0.10 0.127 ± 0.004 1.37 ± 0.10 0.054 ± 0.004 E F P P0 P1 W W1 1.75 ± 0.10 0.069 ± 0.004 3.50 ± 0.05 0.138 ± 0.002 SOT-23 SYMBOL B C d D D2D1 (mm) (inch) SOT-23 SYMBOL A 12.00 ± 0.50 0.472 ± 0.020 8.00 + 0.30 /–0.10 Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR48 Page 5 Reel Taping Specification 120°

SOT-23 3,000 REEL ( pcs ) Reel Size (inch) REEL PACK Standard Packaging Suggested P.C.B. PAD Layout SIZE (inch) 0.035 (mm) 0.90 0.80 0.95 0.031 0.037 SOT-23 2.00 0.079 A B C D A D C B C Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR48 Page 6 H8NS XX = Control code XX