CMP04 AD | Alldatasheet
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REV. D–2– CMP04–SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Unit Input Offset Voltage V OS RS = 0 Ω, RL = 5.1 kΩ, VO = 1.4 V1 0.4 1 mV Input Offset Current I OS IIN(+) – IIN(–), RL = 5.1 kΩ, VO = 1.4 V 2 10 nA Input Bias Current I B IIN(+) or IIN(–) 25 100 nA Voltage Gain A V RL ≥ 15 kΩ, V+ = 15 V2 80 200 V/mV Large Signal Response Time t r VIN = TTL Logic Swing, VREF = 1.4 V3 VRL = 5 V, RL = 5.1 kΩ 300 ns Small Signal Response Time t r VIN = 100 mV Step3, 5 mV Overdrive VRL = 5 V, RL = 5.1 kΩ 1.3 µs Input Voltage Range CMVR Note 4 0 V+ – 1.5 V Common-Mode Rejection Ratio CMRR Notes 2, 5 80 100 dB Power Supply Rejection Ratio PSRR V+ = 5 V to 18 V 2 80 100 dB Saturation Voltage V OL VIN(–) ≥ 1 V, VIN(+) = 0, ISINK ≤ 4 mA 250 400 mV Output Sink Current I SINK VIN(–) ≥ 1 V, VIN(+) = 0, VO ≤ 1.5 V 6 16 mA Output Leakage Current I LEAK VIN(+) ≥ 1 V, VIN(–) = 0, VO = 30 V 0.1 100 nA Supply Current I+ R L = ∞, All Comps V+ = 30 V 0.8 2.0 mA NOTES 1At output switch point, V O = 1.4 V, R S = 0 Ω with V+ from 5 V, and over the full input common-mode range (0 V to V+ – 1.5 V). 2Guaranteed by design. 3Sample tested. 4The input common-mode voltage or input signal voltage should not be allowed to go negative by more than 0.3 V. The upper end of the common-mode voltage range is V+ – 1.5 V, but either or both inputs can go to 30 V without damage. 5RL ≥ 15 kΩ, V+ = 15 V, V CM = 1.5 V to 13.5 V. Specifications subject to change without notice. ELECTRICAL CHARACTERISTICS (@ V+ = 5 V, TA = 25/H11543C, unless otherwise noted.) ABSOLUTE MAXIMUM RATINGS 1 Operating Temperature Range Junction Temperature (T Package Type /H9258JA 2 /H9258JC Unit 14-Lead SOIC 120 36 °C/W NOTES 1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2θJA is specified for worst-case mounting conditions, i.e., θJA is specified for device soldered to printed circuit board for SOIC package. ORDERING GUIDE TA = 25/H11543C Temperature Package Package Model V OS Ranges Descriptions Options CMP04FS 1 mV –40 °C to +85°C 14-Lead SOIC R-14 CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the CMP04 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE
2At output switch point, V O = 1.4 V, R S = 0 Ω with V+ from 5 V; and over the full input common-mode range (0 V to V+ –1.5 V). voltage range is V+ – 1.5 V, but either or both inputs can go to +30 V without damage. Specifications subject to change without notice.
1 WATT
Figure 3. Burn-In Circuit
REV. D–4– CMP04–Typical Performance Characteristics TEMPERATURE (/H11543C) VOS – OFFSET VOLTAGE (mV) 0.3 –40 0 0.2 0.1 –0.1 –0.2 –0.3 –20 20 40 60 80 100 120 140–60 TPC 1. Offset Voltage vs. Temperature TEMPERATURE (/H11543C) AV – VOLTAGE GAIN (V/mV) 160 –40 0 110 100 –20 20 40 60 80 100 120 140–60 150 140 130 120 TPC 4. Voltage Gain vs. Temperature V+ – SUPPLY VOLTAGE (VDC) IB – INPUT BIAS CURRENT (nA) 51 5 10 20 25 30 35 400 TA = 0/H11543C TA = +25/H11543C/70/H11543C TPC 2. Input Bias Current vs. V+ and Temperature SUPPLY VOLTAGE (VDC) 1.1 51 5 0.9 0.3 0.1 10 20 25 30 35 400 TA = 0/H11543C TA = +25/H11543C SUPPLY CURRENT (mA) 0.5 0.7 TA = +70/H11543C TPC 5. Supply Current vs. Supply Voltage TEMPERATURE (/H11543C) IOS – INPUT OFFSET CURRENT (nA) 3.0 –40 0 2.0 1.0 –1.0 –2.0 –3.0 –20 20 40 60 80 100 120 140–60 TPC 3. Input Offset Current vs. Temperature IO – OUTPUT SINK CURRENT (mA) VOL – SATURATION VOLTAGE (VDC) 1.0 0.1 0.01 0.001 0.1 1.0 10 1000.01 TA = +25/H11543C OUT OF SATURATION TPC 6. Output Voltage vs. Output Current and Temperature TIME (/H9262s) 6.0 5.0 –50 –100 0.5 1.0 1.5 2.00 20mV TA = 25/H11543C OUTPUT VOLTAGE VO (V) 4.0 3.0 2.0 1.0 INPUT VOLTAGE VIN (mV) 100mV INPUT OVERDRIVE = 5.0mV VIN 5.1k/H9024 VOUT 5VDC TPC 7. Response Time for Various Input Overdrives—Negative Transition TIME (/H9262s) 6.0 5.0 –50 –100 0.5 1.0 1.5 2.00 20mV TA = 25/H11543C OUTPUT VOLTAGE VO (V) 4.0 3.0 2.0 1.0 INPUT VOLTAGE VIN (mV) 5mV INPUT OVERDRIVE = 100mV VIN 5.1k/H9024 VOUT 5VDC TPC 8. Response Time for Various Input Overdrives—Positive Transition
Figure 15. Time Delay Generator
–8– C00266–0 –3/03(D) REV. D OUTLINE DIMENSIONS 14-Lead Standard Small Outline Package [SOIC] Narrow Body (R-14) Dimensions shown in millimeters and (inches) CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COPLANARITY 0.10 14 8 6.20 (0.2441) 5.80 (0.2283) 4.00 (0.1575) 3.80 (0.1496) 8.75 (0.3445) 8.55 (0.3366) 1.27 (0.0500) BSC SEATING PLANE 0.25 (0.0098) 0.10 (0.0039) 0.51 (0.0201) 0.33 (0.0130) 1.75 (0.0689) 1.35 (0.0531) 8/H11543 0/H11543 0.50 (0.0197) 0.25 (0.0098) /H11547 45/H11543 1.27 (0.0500) 0.40 (0.0157) 0.25 (0.0098) 0.19 (0.0075) COMPLIANT TO JEDEC STANDARDS MS-012AB
Revision History
3/03—Data Sheet changed from REV. C to REV. D. Removal of DICE CHARACTERISTICS, WAFER TEST LIMITS, and TYPICAL ELECTRICAL CMP04