CMKT5089M10 CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 4.5 V Collector Current I C 50 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=15V 50 nA IEBO VEB=4.5V 100 nA BVCBO IC=100µA 30 V BVCEO IC=1.0mA 25 V BVEBO IE=100µA 4.5 V VCE(SAT) IC=10mA, IB=1.0mA 0.5 V VBE(SAT) IC=10mA, IB=1.0mA 0.8 V hFE VCE=5.0V, IC=0.1mA 400 1200 hFE VCE=5.0V, IC=1.0mA 450 hFE VCE=5.0V, IC=10mA 400 fT VCE=5.0V, IC=500µA, f=20MHz 50 MHz Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 pF Cib VBE=0.5V, IC=0, f=1.0MHz 10 pF hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 450 1800 NF V CE=5.0V, IC=100µA, RS=10kΩ f=10Hz to 15.7kHz 2.0 dB MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS MIN MAX UNITS hFE1/hFE2*V CE=5.0V, IC=1.0mA 0.9 1.0 |VBEON1-VBEON2|V CE=5.0V, IC=100µA 5.0 mV * The lowest hFE reading is taken as hFE1. CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT-363 CASE Central Semiconductor Corp. TM R2 (7-August 2003) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individual, isolated 5089 NPN silicon transistors with matched hFE. This ULTRAmini TM device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been designed for applications requiring high gain and low noise. MARKING CODE: C9M0
Semiconductor Corp. TM SOT-363 CASE - MECHANICAL OUTLINE CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS R2 (7-August 2003) LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: C9M0