CMKSH-3T CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 30 V Continuous Forward Current I F 100 mA Peak Repetitive Forward Voltage I FRM 350 mA Forward Surge Current, tp=10ms I FSM 750 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS BVR IR=100µA3 0 V VF IF=2.0mA 0.29 0.33 V VF IF=15mA 0.40 0.45 V VF IF=100mA 0.74 1.00 V IR VR=25V 90 500 nA IR VR=25V, TA=100°C 25 100 µA CT VR=1.0V, f=1 MHz 7.0 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns CMKSH-3T SURFACE MOUNT ULTRAminiTM TRIPLE ISOLATED SILICON SCHOTTKY DIODES SOT-363 CASE Central Semiconductor Corp. TM R2 (7-August 2003) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKSH-3T type contains three (3) Isolated Silicon Schottky Diodes, epoxy molded in a SOT-363 surface mount package. This ULTRAmini TM device has been designed for switching applications requiring a low forward voltage drop. MARKING CODE: KHT
Semiconductor Corp. TM SOT-363 CASE - MECHANICAL OUTLINE CMKSH-3T SURFACE MOUNT ULTRAminiTM TRIPLE ISOLATED SILICON SCHOTTKY DIODES R2 (7-August 2003) LEAD CODE: 1) ANODE D1 2) ANODE D2 3) ANODE D3 4) CATHODE D3 5) CATHODE D2 6) CATHODE D1 MARKING CODE: KHT