CMKSH-3DO CENTRAL | Alldatasheet
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FEATURES: DUAL OPPOSING (DO) SCHOTTKY DIODES SPACE SAVINGS ULTRAmini FAMILY GALVANICALLY ISOLATED LOW FORWARD VOLTAGE (0.58V TYP @100mA) DESCRIPTION: The Central Semiconductor CMKSH-3DO incorporates two galvanically isolated, Low VF Silicon Diodes with an opposing Anode/Cathode configuration, in a space saving surface mount package, designed for fast switching applications requiring a low forward voltage drop. Marking code is KDO. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 30 V Continuous Forward Current I F 100 mA Forward Power Dissipation P D 250 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance Θ JA 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=25V 500 nA IR VR=25V, TA = 100°C 100 µA BVR IR=100µA 30 V VF IF=2.0mA 0.33 V VF IF=15mA 0.45 V VF IF=100mA 0.58 1.00 V CT VR=1.0V, f=1.0MHz 7.0 pF trr IF=IR=10mA; Irr=1.0mA, RL=100Ω 5.0 ns CMKSH-3DO ULTRAmini DUAL OPPOSING SCHOTTKY DIODES SOT-363 CASE Central Semiconductor Corp. TM R0 ( 10-December 2001)
LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 Central Semiconductor Corp. TM SOT-363 CASE - MECHANICAL OUTLINE CMKSH-3DO ULTRAmini DUAL OPPOSING SCHOTTKY DIODES R0 ( 10-December 2001) MARKING CODE: KDO Dual Opposing Configuration