CMKBR-6F CENTRAL | Alldatasheet
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Technical content
MAXIMUM RATINGS: (TA=25 °C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 60 V Continuous Forward Current I F 140 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25 °C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=50V 10 nA BVR IR=100μA6 0 V VF IF=20mA 1.0 V CT VR= 0V, f=1.0MHz 5.0 pF trr IF=IR=10mA, Irr=1.0mA 1000 ns CMKBR-6F SURFACE MOUNT SILICON BRIDGE RECTIFIER SOT-363 CASE Central Semiconductor Corp. TM R1 (27-April 2006) DESCRIPTION: The Central Semiconductor CMKBR-6F is a monolithic silicon full wave bridge rectifier, epoxy molded in a SOT-363 surface mount package. This device has been designed for use in computers and peripheral equipment requiring high speed switching, small size, and closely matched VF. MARKING CODE: CBR3 FEATURES:
- Monolithic construction
- Fast switching
- All diodes share closely matched electrical characteristics.
- Very small size
Semiconductor Corp. TM SOT-363 CASE - MECHANICAL OUTLINE CMKBR-6F SURFACE MOUNT SILICON BRIDGE RECTIFIER R1 (27-April 2006) LEAD CODE: 1) (+) DC 2) NC 3) AC 4) ( -) DC 5) NC 6) AC MARKING CODE: CBR3