CMHD4150 CENTRAL | Alldatasheet
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD4150 type is a high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications. Marking code is C50 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage V R 50 V Peak Repetitive Reverse Voltage V RRM 50 V Continuous Forward Current I F 250 mA Peak Repetitive Forward Current I FRM 250 mA Forward Surge Current, tp=1 msec. I FSM 4000 mA Forward Surge Current, tp=1 sec. I FSM 1000 mA Power Dissipation P D 400 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance Θ JA 312.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR=50V 100 nA VF IF=1.0mA 0.54 0.62 V VF IF=10mA 0.66 0.74 V VF IF=50mA 0.76 0.86 V VF IF=100mA 0.82 0.92 V VF IF=200mA 0.87 1.0 V CT VR=0, f=1 MHz 4.0 pF trr IR=IF=10mA, RL=100Ω , Rec. to 1.0mA 4.0 ns CMHD4150 SURFACE MOUNT HIGH SPEED SWITCHING DIODE SOD-123 CASE Central Semiconductor Corp. TM R0 ( 24-August 2001)
Semiconductor Corp. TM SOD-123 CASE - MECHANICAL OUTLINE CMHD4150 SURFACE MOUNT HIGH SPEED SWITCHING DIODE R0 ( 24-August 2001) MARKING CODE: C50 LEAD CODE: 1) Cathode 2) Anode A B C D FE H G MIN MAX MIN MAX A 0.037 0.053 0.95 1.35 B - 0.005 - 0.12 C - 0.008 - 0.20 D 0.055 0.071 1.40 1.80 E 0.098 0.112 2.50 2.84 F 0.140 0.154 3.55 3.90 G 0.010 - 0.25 - H 0.020 0.028 0.50 0.70 SOD-123 (REV:R3) DIMENSIONS SYMBOL INCHES MILLIMETERS