CMH25N50-VB VBSEMI | Alldatasheet
Document overview
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Technical content
FEATURES
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- L o wRDS(on)
- Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.82 mH, Rg = 25 , IAS = 47 A (see fig. 12c). c. I SD 47 A, dI/dt 230 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) ()V GS = 10 V 0.080 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) 180 Configuration Single N-Channel MOSFET G D S G D S Super-247 Available ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current TC = 25 VGS at 10 V ID TC = 100 A°C 25 Pulsed Drain Currenta IDM 180 Linear Derating Factor 4.3 W/°C Single Pulse Avalanche Energyb EAS 910 mJ Repetitive Avalanche Currenta IAR 40 A Repetitive Avalanche Energya EAR 51 mJ Maximum Power Dissipation TC = 25 °C PD 530 W Peak Diode Recovery dV/dtc dV/dt 9.0 V/ns TJ, TOperating Junction and Storage Temperature Range stg - 55 to + 150 Soldering Recommendations (Peak Temperature) 300for 10 s d www.VBsemi.com CMH25N50-VB CMH25N50-VB Datasheet N-Channel 500V(D-S)Super Junction Power MOSFET g
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 400 μs; duty cycle 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -4 0 °C/WCase-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0 .23 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TVDS Temperature Coefficient J Reference to 25 °C, ID = 1 mA - 0.60 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current VDS = 500 V, VGS IDSS = 0 V - - 50 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance ID = 28 ARDS(on) V GS = 10 V b - 0.080 - Forward Transconductance VDS = 50 V, IDgfs = 28 A 23 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 8310 - pF Output Capacitance Coss - 960 - Reverse Transfer Capacitance Crss - 120 - Output Capacitance Coss VDS = 1. VGS = 0 V 0 V, f = 1.0 MHz - 10170 - VDS = 400 V, f = 1.0 MHz - 240 - Effective Output Capacitance VDS = 0 V to 400 VCoss eff. c - 440 - Total Gate Charge Qg ID VGS = 10 V = 47 A, VDS = 400 V, see fig. 6 and 13b - - 350 nC Gate-Source Charge Qgs -- 85 Gate-Drain Charge Qgd - - 180 Turn-On Delay Time td(on) VDD = 250 V, ID = 47 A, RG = 1.0 , see fig. 10b -2 5 - ns Rise Time tr - 140 - Turn-Off Delay Time td(off) -5 5 - Fall Time tf -7 4 - Drain-Source Body Diode Characteristics MOSFET symbol showing the integral reverse Continuous Source-Drain Diode Current I S p - n junction diode -- 4 7 A Pulsed Diode Forward Currenta ISM - - 190 Body Diode Voltage TJ = 25 °C, IS = 47 A, VGS = 0 VVSD b -- 1. 5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 47 A, dI/dt = 100 A/μsb - 620 940 ns Body Diode Reverse Recovery Charge Q rr -1 4 2 1 μ C Body Diode Recovery Current -3IRRM 8 -A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G www.VBsemi.com CMH25N50-VB g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 0.01 100 1000 0.1 1 10 100 20µs PULSE WIDTH 2T = 5 CJ ° TOP VGS BOTTOM 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V , DV rain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 0.1 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 150 CJ ° TOP VG BOTTOM S 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 0.1 100 1000 4 5 6 7 8 9 10 11 12 V = 50V 20µs PULSE WIDTH DS , GaV te-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 48A www.VBsemi.com CMH25N50-VB g
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 1000000 C,Capacitance(pF) Coss Crss Ciss V = 0V,GS f = 1 MHZ Ciss = C gs + Cgd, C SH Ods RTED Crss = Cgd Coss = C ds + Cgd 0 50 100 150 200 250 300 350 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS I =D 48A V = 100VDS V = 250VDS V = 400VDS 0.1 100 1000 SV , ource-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD 0V = V GS T = 25 CJ ° T = 150 CJ ° 100 1000 10 100 1000 OPERATION IN THIS AREA LIMITEDBY RDS(on) Single Pulse T T = 150 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms www.VBsemi.com CMH25N50-VB g
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 25 50 75 100 125 150 T , Case Temperature ( C)°C ID , Drain Current (A) R Pulse width ≤ 1 µs Duty factor ≤ 0.1 % D VGS RG D.U.T. 10 V V DS - VDD VDS 90 % 10 % VGS td(on) td(off) ttr f 0.001 0.01 0.1 Notes: 1. Duty factor D =t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response(Z ) thJC 0.05 0.01 0.02 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) www.VBsemi.com CMH25N50-VB g
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit A RG IAS 0.01 Ωtp D.U.T LVDS - VDD Driver 15 V 20 V V IAS DS tp 25 50 75 100 125 150 500 1000 1500 2000 Starting T , Junction Temperature( C) SiE , ngle Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 22A 30A 47A QGS Q QGD G VG Charge 10 V D.U.T. V V 3 mA GS DS IG 50 k 0.3 µ ID F 0.2 µF Ω 12 V Current regulator Current sampling resistors Same type as D.U.T. www.VBsemi.com CMH25N50-VB g
Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Reverse recovery Re-applied Ripple ≤ 5 % Body diode forward drop voltage current Body diode forward VGS = 10 V current a ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform P.W. Inductor current D = Period Peak Diode Recovery dV/dt Test Circuit dV/dt controlled by R VDD g Driver same type as D.U.T. ISD controlled by duty factor “D” Circuit layout consideration D.U.T. - device under test D.U.T. s Low stray inductance Ground plane Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD www.VBsemi.com CMH25N50-VB g
TO-274AA (High Voltage) Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Dimension D and E do not include mold fl ash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outer extremes of the plastic body
- Outline conforms to JEDEC® outline to TO-274AA MILLIMETERS INCHES MILLIMETERS INCHES ECN: X17-0056-Rev. B, 27-Mar-17 DWG: 5975 A C B E D L e b 0.10 (0.25) B AMM E1 D2 R Detail “A” A b2 b4 Detail “A” Scale: 2:1 10° 5° Lead Tip www.VBsemi.com CMH25N50-VB g
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