CMF01A TOSHIBA | Alldatasheet

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Fast Recovery Diode (FRD) Silicon Diffused Junction CMF01A Start of commercial production 2021-05 1. Applications

  • High-Speed Rectification (Fast recovery) 2. Features (1) Repetitive peak reverse voltage: VRRM = 600 V (2) Average forward current: IF(AV) = 2.0 A (3) Peak forward voltage: VFM = 2.0 V (max) @IFM = 2.0 A (pulse measurement) (4) Reverse recovery time: trr = 100 ns (max) @IF = 1.0 A, di/dt = -30 A/µs (5) The use of small, thin surface-mount package is optimum way for high-density mounting. Nickname: M-FLATTM 3. Packaging and Internal Circuit M-FLAT 1: Anode 2: Cathode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Characteristics Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature (Note 1) (Note 2) Symbol VRRM IF(AV) IFSM Tj Tstg Rating 600 2.0 150 -55 to 150 Unit V A A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tℓ = 111 , device mounted on a ceramic board (board size: 50 mm × 50 mm, soldering land size: 2 mm × 2 mm, board thickness: 0.64 mm) Note 2: f = 50 Hz, half-sine wave, non-repetitive 2021-05-14 Rev.1.0 ©2021 Toshiba Electronic Devices & Storage Corporation
  1. Thermal Characteristics Characteristics Thermal resistance (junction-to-ambient) Thermal resistance (junction-to-lead) Symbol Rth(j-a) Rth(j-ℓ) Test Condition Device mounted on a ceramic board Board size: 50 mm × 50 mm Soldering land size: 2 mm × 2 mm Board thickness: 0.64 mm Device mounted on a glass-epoxy board Board size: 50 mm × 50 mm Soldering land size: 6 mm × 6 mm Board thickness: 1.6 mm Max 110 Unit 6. Electrical Characteristics (Unless otherwise specified, T a = 25 ) Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Symbol VFM IRRM trr Test Condition IFM = 0.1 A (pulse measurement) IFM = 1.0 A (pulse measurement) IFM = 2.0 A (pulse measurement) VRRM = 600 V (pulse measurement) IF = 1.0 A, di/dt = -30 A/µs Min Typ. 0.66 1.0 1.2 Max 2.0 100 Unit V µA ns 7. Marking Fig. 7.1 Marking Marking Code F1A Part Number CMF01A 8. Land Pattern Dimensions (for reference only) Fig. 8.1 Land Pattern Dimensions for Reference Only (Unit: mm) 2021-05-14 Rev.1.0 ©2021 Toshiba Electronic Devices & Storage Corporation
  1. Usage Considerations (1) The absolute maximum ratings are rated values that must not be exceeded for a moment to have you use an element safely. Please refer to each following absolute maximum ratings on the occasion of use and design. VRRM: In DC circuit, the voltage peaks of applied voltage must be rated less than 80 % absolute maximum ratings. In AC circuit, the voltage peaks of applied voltage must be rated less than 50 % absolute maximum ratings. And, VRRM has a temperature coefficient of 0.1 %/ . Please take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. IF(AV): We recommend that the current be in less than 80 % of rating and the junction temperature (Tj) be in less than 80 % of absolute maximum rating under the worst condition. This rating is based on the premise that the device is radiating heat enough. Therefore, when enough heat radiation is not expected, please consider the margin to the permission curve of Ta(max) - IF(AV) for using the device. IFSM : This rating specifies a non-repetitive limit value. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. Tj : Derate device parameters in proportion to this rating in order to ensure high reliability. We recommend that the junction temperature (Tj) of a device be kept below 80 %. (2) Thermal resistance (junction-to-ambient) varies with the mounting conditions of the device on the circuit board. An appropriate thermal resistance value that should be used, must be considering the heatsink, circuit board design and soldering land size. (3) For other design considerations, see the Toshiba website. 2021-05-14 Rev.1.0 ©2021 Toshiba Electronic Devices & Storage Corporation
  1. Characteristics Curves (Note) Fig. 10.1 IF - V F (Reference Maximum) Fig. 10.2 PF(AV) - I F(AV) Fig. 10.3 Ta(max) - I F(AV) Fig. 10.4 Ta(max) - I F(AV) Fig. 10.5 Tℓ(max) - I F(AV) Fig. 10.6 IFRM - Number of cycles 2021-05-14 Rev.1.0 ©2021 Toshiba Electronic Devices & Storage Corporation

Fig. 10.7 rth(j-a) - t Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2021-05-14 Rev.1.0 ©2021 Toshiba Electronic Devices & Storage Corporation

Unit: mm Weight: 0.023 g (typ.) Package Name(s) TOSHIBA: 3-4E1S Nickname: M-FLAT 2021-05-14 Rev.1.0 ©2021 Toshiba Electronic Devices & Storage Corporation

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